Rohm LAPIS Semiconductor ML22620, Manual

Page: 15 / 115

FEDL22620-01
ML22620
●
AC Characteristics (Flash Memory Interface)
SPV
DD
≥DV
DD
=IOV
DD
=2.7 to 5.5V, DGND=SPGND=0V, Ta=-40 to +85°C, Load capacitance of output pin =15pF(max.)
Parameter Symbol Condition Min. Typ. Max. Unit
ERSCK enable time from ERCSB falling edge t
ECSS
— 50 — — ns
ERSCK hold time from ERCSB rising edge t
ECSH
— 50 — — ns
Data setup time from ERSCK rising edge t
EDIS
— 10 — — ns
Data hold time from ERSCK rising edge t
EDIH
— 10 — — ns
Data delay time from ERSCK falling edge t
EDOD
— — — 5 ns
ERSCK frequency t
ESCKF
— 1.228 16.384 17.20 MHz
ERSCK "H" level pulse width t
ESCKH
— 26 — — ns
ERSCK "L" level pulse width t
ESCKL
— 26 — — ns
ERCSB/ERSC/ERSO delay time from EROFF rising
edge
t
EFLH
— — — 1 ms
ERCSB/ERSC/ERSO delay time from EROFF falling
edge
t
EFHL
— — — 1 ms
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