RX881 Thermal Characteristics
© 2011 Advanced Micro Devices, Inc.
46136 AMD RX881 Databook 1.40
Proprietary
5-3
5.2
RX881 Thermal Characteristics
This section describes some key thermal parameters of the RX881. For a detailed discussion on these parameters
and other thermal design descriptions including package level thermal data and analysis, please consult the
Thermal
Design and Analysis Guidelines
f
or the RS880 Product Family
, order# 46139.
5.2.1
RX881 Thermal Limits
Table 5-5 RX881 Thermal Limits
Parameter
Minimum
Nominal
Maximum
Unit
Note
Operating Case Temperature
0
—
95
°
C
1
Absolute Rated Junction
Temperature
—
—
115
°
C
2
Storage Temperature
-40
—
60
°
C
Ambient Temperature
0
—
45
°
C
3
Thermal Design Power
—
11.4
—
W
4
Notes:
1 - The maximum operating case temperature is the die geometric top-center temperature measured via a thermocouple based on the
methodology given in the document
Thermal Design and Analysis Guidelines for the RS880 Product Family
, order# 46139 (Chapter 12).
This is the temperature at which the functionality of the chip is qualified.
2 - The maximum absolute rated junction temperature is the junction temperature at which the device can operate without causing
damage to the ASIC. This temperature can be measured via the integrated thermal diode described in the next section.
3 - The ambient temperature is defined as the temperature of the local intake air to the thermal management device. The maximum
ambient temperature is dependent on the heat sink's local ambient conditions as well as the chassis' external ambient, and the value
given here is based on AMD’s reference heat sink solution for the RX881. Refer to Chapter 6 in the
Thermal Design and Analysis
Guidelines for the RS880 Product Family
, order# 46139 for heatsink and thermal design guidelines. Refer to Chapter 7 of the above
mentioned document for details of ambient conditions.
4 - Thermal Design Power (TDP) is defined as the highest power dissipated while running currently available worst case applications at
nominal voltages. Since the core power of modern ASICs using 65nm and smaller process technology can vary significantly, parts
specifically screened for higher core power were used for TDP measurement.
The TDP is intended only as a design reference.