38
MC96F6432A
ABOV Semiconductor Co., Ltd.
7.15 Internal Flash Rom Characteristics
(T
A
= -40°C ~ +85°C, VDD = 2.2V ~ 5.5V, VSS = 0V)
Parameter
Symbol
Condition
MIN
TYP
MAX
Unit
Sector Write Time
t
FSW
–
–
2.5
2.7
ms
Sector Erase Time
t
FSE
–
–
2.5
2.7
Code Write Protection Time
t
FHL
–
–
2.5
2.7
Page Buffer Reset Time
t
FBR
–
–
–
5
us
Flash Programming Frequency
f
PGM
–
0.4
–
–
MHz
Endurance of Write/Erase
NF
WE
Sector 0 to 507
–
–
10,000
times
Sector 508 to 511(256 bytes)
–
–
100,000
Flash Data Retention Time
t
RT
–
10
–
–
years
Table 7.15
Internal Flash Rom Characteristics
NOTE)
1. During a flash operation, SCLK[1:0] of SCCR must be set to
“00” or “01” (INT-RC OSC or Main X-TAL for
system clock).
7.16 Input/Output Capacitance
(T
A
= -40°C ~ +85°C, VDD = 0V)
Parameter
Symbol
Condition
MIN
TYP
MAX
Unit
Input Capacitance
C
IN
fx= 1MHz
Unmeasured pins are
connected to VSS
–
–
10
pF
Output Capacitance
C
OUT
I/O Capacitance
C
IO
Table 7.16
Input/Output Capacitance
Summary of Contents for MC96F6432A
Page 16: ...16 MC96F6432A ABOV Semiconductor Co Ltd 4 Package Diagram Figure 4 1 48 Pin QFN Package ...
Page 17: ...17 MC96F6432A ABOV Semiconductor Co Ltd Figure 4 2 44 Pin MQFP Package ...
Page 18: ...18 MC96F6432A ABOV Semiconductor Co Ltd Figure 4 3 32 Pin LQFP Package ...
Page 19: ...19 MC96F6432A ABOV Semiconductor Co Ltd Figure 4 4 32 Pin SOP Package ...
Page 20: ...20 MC96F6432A ABOV Semiconductor Co Ltd Figure 4 5 28 Pin SOP Package ...
