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STM32L151x6/8/B, STM32L152x6/8/B
Electrical characteristics
103
Table 18. Current consumption in Run mode, code with data processing running from RAM
Symbol
Parameter
Conditions
f
HCLK
Typ
Max
(1)
Unit
55 °C 85 °C 105 °C
I
DD (Run
from
RAM)
Supply current
in Run mode,
code executed
from RAM,
Flash switched
off
f
HSE
= f
HCLK
up to 16 MHz,
included
f
HSE
= f
HCLK
/2
above 16 MHz
(PLL ON)
(2)
Range 3,
V
CORE
=1.2 V
VOS[1:0] = 11
1 MHz
200
300
300
300
µA
2 MHz
380
500
500
500
4 MHz
720
860
860
860
(3)
Range 2,
V
CORE
=1.5 V
VOS[1:0] = 10
4 MHz
0.9
1
1
1
mA
8 MHz
1.65
2
2
2
16 MHz
3.2
3.7
3.7
3.7
Range 1,
V
CORE
=1.8 V
VOS[1:0] = 01
8 MHz
2
2.5
2.5
2.5
16 MHz
4
4.5
4.5
4.5
32 MHz
7.7
8.5
8.5
8.5
HSI clock source
(16 MHz)
Range 2,
V
CORE
=1.5 V
VOS[1:0] = 10
16 MHz
3.3
3.8
3.8
3.8
Range 1,
V
CORE
=1.8 V
VOS[1:0] = 01
32 MHz
7.8
9.2
9.2
9.2
MSI clock, 65 kHz
Range 3,
V
CORE
=1.2 V
VOS[1:0] = 11
65 kHz
40
60
60
80
µA
MSI clock, 524 kHz
524 kHz
110
140
140
160
MSI clock, 4.2 MHz
4.2 MHz 700
800
800
820
1. Based on characterization, not tested in production, unless otherwise specified.
2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).
3. Tested in production.