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22.5.3
Erase Block Register 1 (EBR1)
EBR1 is an 8-bit register that specifies the flash memory erase area block by block. EBR1 is
initialized to H'00 by a power-on reset and standby mode, when a high level is input to the FWP
pin, and when a low level is input to the FWP pin and the SWE bit in FLMCR1 is not set. When a
bit in EBR1 is set to 1, the corresponding block can be erased. Other blocks are erase-protected.
Only one of the bits of EBR1 and EBR2 combined can be set. Do not set more than one bit. If
more than one bit is set, writes to bits ESU1, ESU2, E1, and E2 will be invalid. When on-chip
flash memory is disabled, a read will return H'00, and writes are invalid.
The flash memory block configuration is shown in table 22.4.
Bit:
7
6
5
4
3
2
1
0
—
—
—
—
EB3
EB2
EB1
EB0
Initial value:
0
0
0
0
0
0
0
0
R/W:
R
R
R
R
R/W
R/W
R/W
R/W
22.5.4
Erase Block Register 2 (EBR2)
EBR2 is an 8-bit register that specifies the flash memory erase area block by block. EBR2 is
initialized to H'00 by a power-on reset and standby mode, when a high level is input to the FWP
pin, and when a low level is input to the FWP pin and the SWE bit in FLMCR1 is not set. When a
bit in EBR2 is set to 1, the corresponding block can be erased. Other blocks are erase-protected.
When on-chip flash memory is disabled, a read will return H'00, and writes are invalid.
The flash memory block configuration is shown in table 22.4.
Bit:
7
6
5
4
3
2
1
0
EB11
EB10
EB9
EB8
EB7
EB6
EB5
EB4
Initial value:
0
0
0
0
0
0
0
0
R/W:
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
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