Section 21 Electrical Characteristics
Rev. 3.00 Mar. 14, 2006 Page 777 of 804
REJ09B0104-0300
21.5
Flash Memory Characteristics
Table 21.8 Flash Memory Characteristics
Conditions: V
CC
= 4.5 V to 5.5 V, AV
CC0
= 4.5 V to 5.5 V, AV
CC1
= 4.5 V to 5.5 V,
V
SS
= AV
SS
= 0 V, I
φ
= 8 to 40 MHz, P
φ
= 8 to 35 MHz,
T
a
= 0
°
C to +85
°
C (wide-range specifications)
Item Symbol
Min.
Typ.
Max.
Unit
Test
Condition
Programming time
*
1
*
2
*
4
t
P
3 30 ms/128
bytes
Erase time
*
1
*
2
*
4
t
E
80 800
ms/4-kbyte
block
500
5000
ms/32-kbyte
block
1000
10000
ms/64-kbyte
block
Programming time (total)
*
1
*
2
*
4
Σ
t
P
5 15 s/256
kbytes
T
a
= 25
°
C,
memory filled
with 0.
Erase time (total)
*
1
*
2
*
4
Σ
t
E
5 15 s/256
kbytes
T
a
= 25
°
C
Programming/erase time
(total)
*
1
*
2
*
4
Σ
t
PE
10 30 s/256
kbytes
T
a
= 25
°
C
Number of programming
N
WEC
100
*
3
Times
Data retention time
*
4
t
DRP
10
Year
Notes: 1. Programming time and erase time depend on data in the flash memory.
2. Programming time and erase time do not include time for data transfer.
3. All the characteristics after programming are guaranteed within this value (guaranteed
value is from 1 to Min. value).
4. Characteristics when programming is performed within the Min. value
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