
7542 Group
Rev.3.02 Oct 31, 2006 Page 118 of 134
REJ03B0006-0302
Electrical Characteristics (Extended operating temperature 125 °C version) (continued)
Table 43 Electrical characteristics (2) (Extended operating temperature 125 °C version)
(FLASH ROM version: V
CC
= 2.7 to 5.5V, Mask ROM version: V
CC
= 2.4 to 5.5 V, V
SS
= 0 V, Ta = –40 to 125 °C, unless otherwise noted)
Min.
Typ.
Max.
Symbol
Parameter
Limits
Unit
Test conditions
Power source
current
9.0
7.5
6.5
5.5
5.0
4.2
1.2
2.8
3.2
2.4
2.2
1.9
1.0
1.3
0.6
1.0
3.2
2.6
0.6
0.4
1.0
3.0
50
50
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µ
A
µ
A
µ
A
µ
A
I
CC
5.5
4.8
3.5
3.0
2.0
1.7
0.4
1.0
1.5
1.4
0.9
1.0
0.35
0.65
0.2
0.55
1.6
1.2
0.2
0.6
0.2
0.12
0.5
0.5
0.1
0.55
f(X
IN
) = 8 MHz
Output transistors “off”
f(X
IN
) = 2 MHz,
Mask ROM: V
CC
= 2.4 V
FLASH ROM: V
CC
= 2.7 V
Output transistors “off”
On-chip oscillator
operation mode,
Output transistors “off”
f(X
IN
) = 8 MHz (in WIT state),
functions except timer 1 disabled,
Output transistors “off”
f(X
IN
) = 2 MHz,
Mask ROM: V
CC
= 2.4 V
FLASH ROM: V
CC
= 2.7 V
(in WIT state),
functions except timer 1 disabled,
Output transistors “off”
On-chip oscillator operation mode,
(in WIT state),
functions except timer 1 disabled,
Output transistors “off”
Increment when A/D conversion is executed
f(X
IN
) = 8 MHz, V
CC
= 5 V
All oscillation stopped
(in STP state)
Output transistors “off”
Double-speed mode Mask ROM
FLASH ROM
High-speed mode
Mask ROM
FLASH ROM
Middle-speed mode Mask ROM
FLASH ROM
High-speed mode
Mask ROM
FLASH ROM
Frequency/1
Mask ROM
FLASH ROM
Frequency/2
Mask ROM
FLASH ROM
Frequency/8
Mask ROM
FLASH ROM
Frequency/128
Mask ROM
FLASH ROM
Mask ROM
FLASH ROM
Mask ROM
FLASH ROM
Mask ROM
FLASH ROM
Mask ROM
FLASH ROM
Ta = 25 °C
Mask ROM
FLASH ROM
Ta = 125 °C
Mask ROM
FLASH ROM
Note: Increment when A/D conversion is executed includes the reference power source input current (IV
REF
).