Data Sheet
86
Rev. 1.00
2017-07-31
TLE9263BQXV33
LIN Transceiver
11.3
Electrical Characteristics
Table 19 Electrical Characteristics
V
SHS
= 5.5 V to 18 V,
T
j
= -40 °C to +150 °C, RL = 500
Ω
, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
Parameter
Symbol
Values
Unit Note or Test Condition
Number
Min.
Typ. Max.
Receiver Output (RXD pin)
HIGH Level Output Voltage
V
RXD,H
0.8 ×
V
CC1
–
–
V
I
RXD
= -1.6 mA;
V
Bus
=
V
SHS
P_11.3.1
LOW Level Output Voltage
V
RXD,L
–
–
0.2 ×
V
CC1
V
I
RXD
= 1.6 mA
V
Bus
= 0 V
P_11.3.2
Transmission Input (TXD pin)
HIGH Level Input Voltage
V
TXD,H
0.7 ×
V
CC1
–
–
V
Recessive State
P_11.3.3
TXD Input Hysteresis
V
TXD,hys
0.08 ×
V
CC1
0.12 ×
V
CC1
0.5 ×
V
CC1
V
1)
P_11.3.4
LOW Level Input Voltage
V
TXD,L
–
–
0.3 ×
V
CC1
V
Dominant State
P_11.3.5
TXD Pull-up Resistance
R
TXD
20
40
80
k
Ω
V
TXD
= 0 V
P_11.3.6
LIN Bus Receiver (LIN Pin)
Receiver Threshold Voltage,
Recessive to Dominant Edge
V
Bus,rd
0.4 ×
V
SHS
0.45 ×
V
SHS
–
V
P_11.3.7
Receiver Dominant State
V
Bus,dom
–
–
0.4 ×
V
SHS
V
LIN 2.2 Param. 17
P_11.3.8
Receiver Threshold Voltage,
Dominant to Recessive Edge
V
Bus,dr
–
0.55 ×
V
SHS
0.60 ×
V
SHS
V
P_11.3.9
Receiver Recessive State
V
Bus,rec
0.6 ×
V
SHS
–
–
V
LIN 2.2 Param 18
P_11.3.10
Receiver Center Voltage
V
Bus,c
0.475
×
V
SHS
0.5 ×
V
SHS
0.525
×
V
SHS
V
LIN 2.2 Param 19
6 V <
V
SHS
< 18 V
P_11.3.11
Receiver Hysteresis
V
Bus,hys
0.07 ×
V
SHS
0.1 ×
V
SHS
0.175
×
V
SHS
V
Vbus,hys =
V
bus,dr
-
V
bus,rd
LIN 2.2 Param 20
P_11.3.12
Wake-up Threshold Voltage
V
Bus,wk
0.40 ×
V
SHS
0.5 ×
V
SHS
0.6 ×
V
SHS
V
–
P_11.3.13
Dominant Time for Bus
Wake-up
t
WK,Bus
30
–
150
µs
2)
P_11.3.14
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