iC-Haus iC-PVS, Руководство пользователя, Страница: 8 / 51

preliminary preliminary
iC-PVS
LINEAR/OFF-AXIS
BATTERY-BUFFERED ABSOLUTE POSITION HALL SENSOR
Rev A2, Page 8/51
ELECTRICAL CHARACTERISTICS
Operating conditions:
VDD = 3.15...5.5 V, VBAT = 3.0...5.0 V, GND = 0 V, Tj = -40...125
° C, fslow calibrated to 34 kHz with IBIAS, unless otherwise stated.
Item Symbol Parameter Conditions Unit
No. Min. Typ. Max.
General
001 V(VDD)
Permissible Main Supply Voltage VON5 = 0 3.15 3.3 5.5 V
VON5 = 1 4.50 5.0 5.5 V
002 I(VDD) Supply Current in VDD Tj = 27 ° C, no load,
VDD = 3.3 V 40 60 mA
VDD = 5.0 V 50 80 mA
003 SR(VDD) Permissible Slew Rate at VDD 0.1 V/ µ s
004 V(VBAT) Permissible Battery Voltage 3.0 3.6 5.0 V
005 Iavg(VBAT) Average Supply Current in VBAT VBAT = 3.6 V, Tj = 27 ° C, 10 1500 µ A
depending on fmag and A_MAX, see Table 44
006 Ipls(VBAT) Pulse Current in VBAT pulsed operation, tpulse < 10 µ s, Tj = 27 ° C, 8.0 20.0 mA
007 Vc()hi Clamp Voltage hi at All Pins
except VDD Vc()hi = V() - V(VDDS), I() = +1 mA 0.3 0.7 1.6 V
008 V() Voltage at all other pins except
VDD, VBAT, VDDS and GND
general -0.25
VDDS+0.3
V
V(VDD) > Von ( VDD supply ) -0.25
VDD+0.3
V
V(VDD) < Von ( Battery supply) -0.25
VBAT+0.3
V
009 Vc()lo Clamp Voltage lo at All Pins
except VDDS I() = -1 mA -1.6 -0.7 -0.25 V
010 C(VBAT) External Bypass Capacitor
at Pin VBAT ceramic capacitor placed as close as possible
to the pin 1 1 µ F
011 C(VDDS) External Bypass Capacitor
at Pin VDDS ceramic capacitor placed as close as possible
to the pin 1 1 µ F
012 C(VDD) External Bypass Capacitor
at Pin VDD ceramic capacitor placed as close as possible
to the pin 1 1 µ F
013 tstup(VDD) Startup Time Analog Signal Path
after VDD Power Cycle, Standby
or Sleep
ENAC = 0 1 2 ms
ENAC = 1 3 6 ms
Magnetic Signal Conditioning
101 hpac Sensor-to-Package-Surface
Distance QFN38 5x7 0.4 mm
102 Hmax Permissible Maximum Magnetic
Field Strength, see Figure 11
AC+DC Field at chip surface
DCCOMP = 0
-180 180 kA/m
DCCOMP = 1 -380 380 kA/m
103 Bmax Permissible Maximum Magnetic
Flux Density, see Figure 11
AC+DC Field at chip surface in air
DCCOMP = 0
-225 225 mT
DCCOMP = 1 -475 475 mT
104 Hamp Permissible Operating Magnetic
Field Amplitude, see Figure 11
at chip surface
DCCOMP = 0:
10 100 kA/m
DCCOMP = 1: 13 100 kA/m
105 Bamp Permissible Operating Amplitude
of Magnetic Flux Density, see
Figure 11 at chip surface in air
DCCOMP = 0:
12.5 125 mT
DCCOMP = 1: 16.25 125 mT
106 fmag Permissible Magnetic Input Fre-
quency VDDS = 5.0 V, tested via electrical input 25 kHz
107 frot
Permissible Rotation of Pole
Wheel with
32 pole pairs 46000 rpm
64 pole pairs 23000 rpm
108 vmax
Permissible Movement Speed
(Linear) 1.0 mm pole width (2 mm magnetic period) 50 m/s
1.5 mm pole width (3 mm magnetic period) 75 m/s
109 Ht No Magnet Detection Threshold
(Magnetic Field ) MAGTHR = 0x00 5.0 kA/m
MAGTHR = 0x01 2.5 kA/m
MAGTHR = 0x02 1.25 kA/m
MAGTHR = 0x03 10.0 kA/m
device is in NoMagnet working state if field
amplitude (at chip surface) is below this value