Rev. 1.00
14
August 29, 2018
Rev. 1.00
15
August 29, 2018
HT45F6530
AC Voltage Regulator Flash MCU
HT45F6530
AC Voltage Regulator Flash MCU
Input/Output Characteristics
Ta=25˚C
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Unit
V
DD
Conditions
V
IL
Input Low Voltage for I/O Ports
5V
—
0.0
—
1.5
V
—
0.0
—
0.2V
DD
V
IH
Input High Voltage for I/O Ports
5V
—
3.5
—
5.0
V
—
0.8V
DD
—
V
DD
I
OL
Sink Current for I/O Ports
3V
V
OL
=0.1V
DD
16
32
—
mA
5V
32
65
—
I
OH
Source Current for I/O Ports
3V
V
OH
=0.9V
DD
-4
-8
—
mA
5V
-8
-16
—
R
PH
Pull-high Resistance for I/O Ports
(Note)
3V
—
20
60
100
kΩ
5V
10
30
50
I
LEAK
Input Leakage Current
5V V
IN
=V
DD
or V
IN
=V
SS
—
—
±1
μA
t
TCK
TM TCK Input Pin Minimum Pulse Width
—
—
0.3
—
—
μs
t
INT
External Interrupt Minimum Pulse Width
—
—
10
—
—
μs
Note: The R
PH
internal pull high resistance value is calculated by connecting to ground and enabling the input pin
with a pull-high resistor and then measuring the pin
current at the specified supply voltage level. Dividing
the voltage by this measured current provides the R
PH
value.
Memory Characteristics
Ta=-40˚C~85˚C, unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
Conditions
V
RW
V
DD
for Read/Write
—
—
V
DDmin
—
V
DDmax
V
Flash Program/Data EEPROM Memory
t
DEW
Erase/Write Cycle Time
—
—
—
4
15
ms
I
DDPGM
Programming/Erase Current on V
DD
—
—
—
—
5.0
mA
E
P
Cell Endurance
—
—
100K
—
—
E/W
t
RETD
ROM Data Retention Time
—
Ta=25˚C
—
40
—
Year
RAM Data Memory
V
DR
RAM Data Retention Voltage
—
Device in SLEEP Mode
1.0
—
—
V