Rev. 1.00
20
September 11, 2018
Rev. 1.00
21
September 11, 2018
HT45F4050
A/D NFC Flash MCU
HT45F4050
A/D NFC Flash MCU
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V
DD
Conditions
t
SST
System Start-up Timer Period
(Wake-up from Power Down
Mode and f
SYS
Off)
—
f
SYS
=f
SUB
=f
LXT
—
1024
—
t
LXT
—
f
SYS
=f
H
~ f
H
/64, f
H
=f
HXT
—
128
—
t
HXT
—
f
SYS
=f
H
~ f
H
/64, f
H
=f
HIRC
—
16
—
t
HIRC
—
f
SYS
=f
SUB
=f
LIRC
—
2
—
t
LIRC
System Start-up Timer Period
(Slow Mode ↔ Normal Mode, or
f
H=
f
HIRC
↔ f
HXT
, or f
SUB=
f
LIRC
↔ f
LXT
)
—
f
HXT
off → on (HXTF=1)
—
1024
—
t
HXT
—
f
HIRC
off → on (HIRCF=1)
—
16
—
t
HIRC
—
f
LXT
off → on (LXTF=1)
—
1024
—
t
LXT
System Start-up Timer Period
(Wake-up from Power Down
Mode and f
SYS
On)
—
f
SYS
=f
H
~ f
H
/64,
f
SYS
=f
HXT
or f
HIRC
—
2
—
t
H
—
f
SYS
=f
LXT
or f
LIRC
—
2
—
t
SUB
System Start-up Timer Period
(WDT Time-out Hardware Cold
Reset)
—
—
—
0
—
t
H
NFC Function
f
PLL
NFC PLL Frequency
2.2V~5.5V Ta=-40°C~85°C
-7%
13.56
+7% MHz
t
SETUP
NFC PLL Setup Time
2.2V~5.5V Ta=-40°C~85°C
—
—
90
μs
t
RCY
NFC EEPROM Read Time
2.2V~5.5V Ta=-40°C~85°C
—
—
200
t
SYS
t
WCY
NFC EEPROM Write Time
2.2V~5.5V Ta=-40°C~85°C
—
4
6
ms
Note: t
SYS
=1/f
SYS
Memory Characteristics
Ta=-40°C~85°C, unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
Conditions
V
RW
V
DD
for Read / Write
—
—
V
DDmin
—
V
DDmax
V
Flash Program / Data EEPROM Memory
t
DEW
Erase / Write Time – Flash Program
Memory
—
—
—
2
3
ms
Write Cycle Time – Data EEPROM
Memory
—
—
—
4
6
ms
t
DER
Read Time – Flash Program Memory /
Data EEPROM Memory
—
—
—
—
4
t
SYS
I
DDPGM
Programming / Erase current on V
DD
—
—
—
—
5.0
mA
E
P
Cell Endurance
—
—
100K
—
—
E/W
t
RETD
ROM Data Retention time
—
Ta=25°C
—
40
—
Year
RAM Data Memory
V
DR
RAM Data Retention voltage
—
Device in SLEEP Mode
1.0
—
—
V