Fuji Electric Monitouch S8 series, Руководство по подключению

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Appendix 1 Device Memory Map App1-11
Control Memory
Control memory is used for executing synchronized reading/synchronized writing.
Consecutive four words starting from control memory “n” are allocated.
Read/Write command memory (control memory “n” and “n + 1”)
One bit is allocated to each table.
At the leading edge of a bit (0
→
1), reading from or writing to memory set in the corresponding device memory map occurs.
Read/Write confirmation memory (control memory “n + 2” and “n + 3”)
One bit is allocated to each table.
When the bit of the command memory is set (0
→
1) and the resulting reading or writing is completed, the bit of the
corresponding confirmation memory is set (0
→
1).
When a bit of the command memory is reset (1
→
0), the confirmation memory bit of the corresponding memory map number
is reset (1
→
0).
Function Synchronized Writing
<< Source Memory 1
<< Source Memory 2
Specify the storage target memory address for the source data.
Control Memory
Enter a memory address as the trigger for synchronized reading.
The specified memory address is used for the device memory map Nos. 0 to 31. Four words are
occupied. For more information, see “Control Memory” (page App1-11).
Control
Memory n
Contents Memory Type
n
Read/Write command memory
→
S8
n + 1
n + 2
Read/Write confirmation memory
←
S8
n + 3
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16
n
Device memory map Nos. 0 to 15
Device memory map Nos. 16 to 31
n + 1
Bit number
Bit number
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16
n + 2
Device memory map Nos. 0 to 15
Device memory map Nos. 16 to 31
n + 3
Bit number
Bit number