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MPC563XM Reference Manual, Rev. 1
42
Freescale Semiconductor
Preliminary—Subject to Change Without Notice
1.4.10
Flash
The MPC563XM provides up to 1.5 MB of programmable, non-volatile, flash memory. The non-volatile
memory (NVM) can be used for instruction and/or data storage. The flash module includes a Fetch
Accelerator, that optimizes the performance of the flash array to match the CPU architecture and provides
single cycle random access to the flash @ 80 MHz. The flash module interfaces the system bus to a
dedicated flash memory array controller. For CPU ‘loads’, DMA transfers and CPU instruction fetch, it
supports a 64-bit data bus width at the system bus port, and a 128-bit read data interface to flash memory.
The module contains a four-entry, 128-bit prefetch buffer and a prefetch controller which prefetches
sequential lines of data from the flash array into the buffer. Prefetch buffer hits allow no-wait responses.
Normal flash array accesses are registered and are forwarded to the system bus on the following cycle,
incurring three wait-states. Prefetch operations may be automatically controlled, and are restricted to
instruction fetch.
The flash memory provides the following features:
•
Supports a 64-bit data bus for instruction fetch, CPU loads and DMA access. Byte, halfword, word
and doubleword reads are supported. Only aligned word and doubleword writes are supported.
•
Fetch Accelerator
— Architected to optimize the performance of the flash with the CPU to provide single cycle
random access to the flash up to 80 MHz system clock speed
— Configurable read buffering and line prefetch support
— Four line read buffers (128 bits wide) and a prefetch controller
•
Hardware and software configurable read and write access protections on a per-master basis
•
Interface to the flash array controller is pipelined with a depth of one, allowing overlapped accesses
to proceed in parallel for interleaved or pipelined flash array designs
•
Configurable access timing allowing use in a wide range of system frequencies
•
Multiple-mapping support and mapping-based block access timing (0-31 additional cycles)
allowing use for emulation of other memory types
•
Software programmable block program/erase restriction control
•
Erase of selected block(s)
•
Read page size of 128 bits (four words)
•
ECC with single-bit correction, double-bit detection
•
Program page size of 128 bits (four words) to accelerate programming
•
ECC single-bit error corrections are visible to software
•
Minimum program size is two consecutive 32-bit words, aligned on a 0-modulo-8 byte address,
due to ECC
•
Embedded hardware program and erase algorithm
•
Erase suspend, program suspend and erase-suspended program
•
Shadow information stored in non-volatile shadow block
•
Independent program/erase of the shadow block
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