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EES3 Hardware Interface Description

3.5 Charging Control

71

EES3_HD_v01.100b

Page 43 of 118

2009-08-12

Confidential / Released



3.5.4

Batteries Tested for Use with EES3

When you choose a battery for your EES3 application you can take advantage of one of the
following two batteries offered by VARTA Microbattery GmbH. Both batteries meet all require-
ments listed above. They have been thoroughly tested by Cinterion Wireless Modules and
proved to be suited for EES3.
•

LIP 653450 TC, type Lithium Ion
This battery is listed in the standard product range of VARTA. It is incorporated in a shrink
sleeve and has been chosen for integration into the reference setup.

•

PLF 503759C.PCM, type PoLiFlex® Lithium Polymer
This battery has been especially designed by VARTA for use with electronic applications
like mobile phones, PDAs, MP3 players, security and telematic devices. It has almost the
same properties as the above Li-Ion battery. It is type Polymer, is smaller, lighter and comes
without casing.

Specifications, construction drawings and sales contacts for both VARTA batteries can be
found in

Table 10:

Specifications of battery packs suited for use with

EES3

Battery type

Rechargeable Lithium Ion or Lithium Polymer battery

Nominal voltage

3.6V / 3.7V

Capacity

> 500mAh

NTC

10k



± 5% @ 25°C

approx. 5k



@ 45°C

approx. 26.2k



@ 0°C

B value range: B (25/85)=3423K to B =3435K ± 3%

Overcharge detection voltage

4.325 ± 0.025V

Deep discharge detection voltage

2.4V

Deep discharge release voltage

2.6V

Overcurrent detection

3 ± 0.5A

Overcurrent detection delay time

4 ~ 16ms

Short detection delay time

50µs

Internal resistance

<130m



Note: A maximum internal resistance of 150m



should not be

exceeded even after 500 cycles and under extreme condi-
tions.

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Содержание EES3

Страница 1: ...EES3 Version 01 100b DocId EES3_HD_v01 100b Hardware Interface Description...

Страница 2: ...ERIOD OF TIME TO OBSERVE SECRECY REGARDING ANY INFORMATION AND DATA PROVIDED TO HIM IN THE CONTEXT OF THE DELIVERY OF THE PRODUCT THIS GENERAL NOTE SHALL BE GOV ERNED AND CONSTRUED ACCORDING TO GERMAN...

Страница 3: ...27 3 3 1 Turn on EES3 27 3 3 1 1 Turn on EES3 Using Ignition Line IGT 27 3 3 1 2 Configuring the IGT Line for Use as ON OFF Switch 30 3 3 1 3 Turn on EES3 Using the VCHARGE Signal 30 3 3 1 4 Reset EES...

Страница 4: ...Microphone Input 61 3 15 2 2 Differential Microphone Input 62 3 15 2 3 Line Input Configuration with OpAmp 63 3 15 3 Loudspeaker Circuit 64 3 15 4 Digital Audio Interface DAI 64 3 15 4 1 Master Mode 6...

Страница 5: ...sitivity Level 104 6 2 3 Soldering Conditions and Temperature 104 6 2 3 1 Reflow Profile 104 6 2 3 2 Maximum Temperature and Duration 105 6 2 4 Durability and Mechanical Handling 106 6 2 4 1 Storage L...

Страница 6: ...of ASC1 54 Table 17 Configuration combinations for the PCM interface 65 Table 18 Overview of DAI signal functions 65 Table 19 Return loss in the active band 72 Table 20 Absolute maximum ratings 76 Ta...

Страница 7: ...ne of EES3 56 Figure 21 SPI interface 57 Figure 22 Characteristics of SPI modes 58 Figure 23 Audio block diagram 59 Figure 24 Single ended microphone input 61 Figure 25 Differential microphone input 6...

Страница 8: ...8 of 118 2009 08 12 Confidential Released Figure 51 Moisture barrier bag MBB with imprint 109 Figure 52 Moisture Sensitivity Label 110 Figure 53 Humidity Indicator Card HIC 111 Figure 54 EES3 sample...

Страница 9: ...cription Version 01 100 New document EES3 Hardware Interface Description Version 01 000 Chapter What is new 3 3 1 1 Removed URC Shutdown after Illegal Powerup 3 3 2 Table 8 Changed values of PU Pull u...

Страница 10: ...te 24 Application Developer s Guide 9 Application Note 26 Power Supply Design for Wireless Applications 10 Application Note 32 Integrating USB into GSM Applications 11 Application Note 48 SMT Module I...

Страница 11: ...uipment typically computer terminal printer or for example GSM application DTR Data Terminal Ready DTX Discontinuous Transmission EFR Enhanced Full Rate EGSM Enhanced GSM EIRP Equivalent Isotropic Rad...

Страница 12: ...BCCH Packet Switched Broadcast Control Channel PCB Printed Circuit Board PCL Power Control Level PCM Pulse Code Modulation PCN Personal Communications Network also referred to as DCS 1800 PCS Personal...

Страница 13: ...ace Mount Technology SPI Serial Peripheral Interface SRAM Static Random Access Memory TA Terminal adapter e g GSM module TDMA Time Division Multiple Access TE Terminal Equipment also referred to as DT...

Страница 14: ...uary 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equip ment RoHS Table 2 Standards of North American type approval CFR Title 47 Code of Federal Regu...

Страница 15: ...f Information Industry of the People s Republic of China SJ T 11363 2006 Requirements for Concentration Limits for Certain Hazardous Sub stances in Electronic Information Products 2006 06 SJ T 11364 2...

Страница 16: ...nce the SAR value varies significantly with the individual product design manufacturers are advised to submit their product for approval if designed for portable use For European and US markets the re...

Страница 17: ...the suspension or denial of cellular services to the offender legal action or both Do not operate the cellular terminal or mobile in the presence of flammable gases or fumes Switch off the cellular t...

Страница 18: ...maximum output power varies with the number of uplink timeslots used and amounts to 3 0dB for 2Tx 4 8dB for 3Tx and 6 0dB for 4Tx Power supply 3 2V to 4 5V Ambient operating temperature according to I...

Страница 19: ...ng to the SIM Access Profile Interoperability Specification of the Bluetooth Special Interest Group SAP Firmware update Generic update from host application over ASC0 ASC1 or USB Interfaces Module int...

Страница 20: ...interface is not available Audio 2 analog interfaces 1 digital interface PCM SIM interface Supported SIM cards 3V 1 8V Antenna 50 Power on off Reset Power on off Switch on by hardware signal IGT Swit...

Страница 21: ...EES3 Hardware Interface Description 2 2 EES3 System Overview 22 EES3_HD_v01 100b Page 21 of 118 2009 08 12 Confidential Released 2 2 EES3 System Overview Figure 1 EES3 system overview...

Страница 22: ...rface SMT with connecting pads RF section RF transceiver RF power amplifier RF front Antenna pad Figure 2 EES3 block diagram BATT GND IGT EMERG_OFF ASC 0 SIM Interface D 0 15 A 0 24 RD WR CS WAIT Inte...

Страница 23: ...es several sub interfaces described in the following sections Power supply see Section 3 2 Charger interface see Section 3 5 SIM interface see Section 3 9 Serial interface ASC0 see Section 3 10 Serial...

Страница 24: ...er in progress Power consumption depends on network settings e g power control level uplink downlink data rates GPRS configuration e g used multislot settings and reduction of maximum output power POW...

Страница 25: ...EXT line a regulated voltage for an external application This voltage is not available in Power down mode SIM switch to provide SIM power supply 3 2 1 Minimizing Power Losses When designing the power...

Страница 26: ...ure 4 Figure 4 Position of reference points BATT and GND 3 2 3 Monitoring Power Supply by AT Command To monitor the supply voltage you can also use the AT SBV command which returns the value related t...

Страница 27: ...te the module s ready state SYSSTART indicates that the module has entered Normal mode SYSSTART AIRPLANE MODE indicates that the module has entered Airplane mode SYSSTART CHARGE ONLY MODE indicates th...

Страница 28: ...enabled To allow the application to detect the ready state of the module we recommend using hardware flow control which can be set with AT Q or AT IFC see 1 for details The default setting of EES3 is...

Страница 29: ...Scenarios 71 EES3_HD_v01 100b Page 29 of 118 2009 08 12 Confidential Released Figure 6 Powerup with IGT held low before switching on operating voltage at BATT For details on how to use EMERG_OFF to r...

Страница 30: ...e EES3 is on the IGT line must be asserted for at least 1s before being released The module switches off after the line is released The switch off routine is identical with the procedure initiated by...

Страница 31: ...in the volatile memory Therefore this procedure is intended only for use in case of emergency e g if EES3 does not respond if reset or shutdown via AT command fails The EMERG_OFF signal is available...

Страница 32: ...gain once the respective interface is activated or configured by AT command Table 8 Signal states Signal name Undefined state during startup Defined state after startup ini tialization Active state af...

Страница 33: ...he signal has the intermediate states O H for about 2s and O L for about 1s 3 Before reaching the defined state the signal has the intermediate state O H for about 0 5s L Low level H High level L H Lo...

Страница 34: ...llowing response SMSO MS OFF OK SHUTDOWN After sending AT SMSO do not enter any other AT commands There are two ways to verify when the module turns off Wait for the URC SHUTDOWN It indicates that dat...

Страница 35: ...Description 3 3 Power Up Power Down Scenarios 71 EES3_HD_v01 100b Page 35 of 118 2009 08 12 Confidential Released Figure 8 Signal states during turn off procedure Note 1 Depending on capacitance load...

Страница 36: ...application or Terminal program on the USB VCOM port be closed down before the module restarts Note that if AT CFUN x 1 is entered on the USB interface the application or Terminal program on the USB...

Страница 37: ...ated URCs indicating the level 2 or 2 are instantly followed by an orderly shutdown except in cases described in Section 3 3 4 2 The presentation of these URCs is always enabled i e they will be outpu...

Страница 38: ...to prevent damage to the module Extended usage of the deferred shutdown functionality may result in damage to the module and possibly other severe consequences 3 3 4 3 Undervoltage Shutdown If the mea...

Страница 39: ...BC Overvoltage warning This alert is sent once When the overvoltage shutdown threshold is exceeded the module will send the following URC SBC Overvoltage shutdown before it shuts down cleanly This typ...

Страница 40: ...e power consumption and consequently causes the board s temperature to decrease Once the temperature drops by 5 degrees EES3 returns to the higher Multislot Class If the temperature stays at the criti...

Страница 41: ...n your application according to the Figure 54 3 5 2 Software Requirements Use the command AT SBC parameter current to enter the current consumption of the host application This information enables the...

Страница 42: ...arging process will not start if no NTC is present Ensure that the pack incorporates a protection circuit capable of detecting overvoltage pro tection against overcharging undervoltage protection agai...

Страница 43: ...for use with electronic applications like mobile phones PDAs MP3 players security and telematic devices It has almost the same properties as the above Li Ion battery It is type Polymer is smaller lig...

Страница 44: ...V the battery is charged at 100mA Software controlled charging Controlled over CHARGEGATE Temperature conditions 0 C to 45 C Software controlled charging is done when the charger is present connected...

Страница 45: ...or undertemperature In these cases you can only switch the module off by disconnecting the charger To proceed from Charge only mode to another operating mode you have the following options provided t...

Страница 46: ...power level PCL5 and GPRS Class 12 at the same time the current consumption is higher than the current supplied by the charger Charge only mode Connect charger to charger input of host application ch...

Страница 47: ...e both the EES3 and the application must be configured to use hard ware flow control This is necessary since the CTSx signal is set reset every 0 9 2 7 seconds in order to indicate to the application...

Страница 48: ...up the ME In this case the activity time is at least the time set with AT SCFG PowerSaver Mode9 Time out psm9to default 2 seconds RTSx has to be asserted for at least a dedicated debounce time in ord...

Страница 49: ...f AT SCFG MeOpMode Airplane OnStart off IGT 400 ms at low level then release IGT Connect charger to VCHARGE If AT SCFG MeOpMode Airplane OnStart on IGT 400 ms at low level then release IGT Regardless...

Страница 50: ...attery rechargeable or non chargeable The capacitor is charged by the BATT line of EES3 If the voltage supply at BATT is disconnected the RTC can be powered by the capac itor The size of the capacitor...

Страница 51: ...to meet the specifications of 3GPP TS 51 010 1 and to satisfy the requirements of EMC compliance To avoid possible cross talk from the CCCLK signal to the CCIO signal be careful that both lines are n...

Страница 52: ...the GSM module with AT commands Full Multiplex capability allows the interface to be partitioned into three virtual channels yet with CSD and fax services only available on the first logical channel P...

Страница 53: ...d Table 15 DCE DTE wiring of ASC0 V 24 circuit DCE DTE Line function Signal direction Line function Signal direction 103 TXD0 Input TXD Output 104 RXD0 Output RXD Input 105 RTS0 Input RTS Output 106 C...

Страница 54: ...D application sends data to module s TXD1 signal line Port RXD application receives data from the module s RXD1 signal line Figure 17 Serial interface ASC1 Features Includes only the data lines TXD1 a...

Страница 55: ...across the VUSB_IN line power to the module s USB interface but not to other EES3 interfaces This is because EES3 is designed as a self powered device compliant with the Universal Serial Bus Specific...

Страница 56: ...vation of the SPI locks both lines for I2 C Detailed information on the AT SSPI command as well explana tions on the protocol and syntax required for data transmission can be found in 1 The I2 C inter...

Страница 57: ...ed and data can be transferred from the module and vice versa The SPI interface uses two independent lines for data input SPIDI and data output SPIDO Figure 21 SPI interface To configure and activate...

Страница 58: ...EES3 Hardware Interface Description 3 14 SPI Interface 71 EES3_HD_v01 100b Page 58 of 118 2009 08 12 Confidential Released Figure 22 Characteristics of SPI modes...

Страница 59: ...istics of the voiceband part vary with the audio mode For example sending and receiving amplification sidetone paths noise suppression etc depend on the selected mode and can be altered with AT comman...

Страница 60: ...voltage supply VMIC and the dedicated audio ground line AGND Both lines are well suited to feed a balanced audio application or a single ended audio appli cation The AGND line on the EES3 board is esp...

Страница 61: ...sed to the MICPx DC level It is AC coupled via CK to a resistive divider which is used to optimize supply noise cancellation by the differential micro phone amplifier in the module The VMIC voltage sh...

Страница 62: ...ched on Only if VMIC is switched on can the voltage applied to any MIC line be in the range of 2 4V to 0V If these limits are exceeded undervoltage shutdown may be caused Consider that the maximum ful...

Страница 63: ...ed if gains larger than 20dB are used The filter can be at tached as a simple first order RC network RVMIC and CF If a high input level and a lower gain are applied the filter is not necessary Conside...

Страница 64: ...face DAI The DAI can be used to connect audio devices capable of PCM Pulse Code Modulation or for type approval The following chapters describe the PCM interface functionality The PCM functionality al...

Страница 65: ...es TXDAI and RXDAI however are used in both modes Unused inputs should be tied to GND via pull down resistors In addition DAI1 requires a 47kOhm pull down resistor to be placed as close as possible to...

Страница 66: ...nsmission starts if short frame is configured If long frame is selected the frame sync signal FS is high during the whole transfer of the 16 data bits Each frame has a duration of 125 s and contains 3...

Страница 67: ...nsfer starts at the falling edge of FSIN if the short frame format is selected and at the rising edge of FSIN if long frame format is selected With this edge control the frame sync signal is independe...

Страница 68: ...ed Figure 31 Slave PCM interface application The following figures show the slave short and long frame timings Because these are edge controlled frame sync signals may deviate from the ideally form as...

Страница 69: ...ction 3 16 2 The first function factory default AT SSYNC 0 is recommended if you want your application to use the synchronization signal for better power supply control Your platform design must be su...

Страница 70: ...D must be connected to the host application The connected LED can be operated in two different display modes AT SSYNC 1 or AT SSYNC 2 For details please refer to 1 Figure 35 LED Circuit Example Especi...

Страница 71: ...at the expense of a higher current consumption Therefore utilizing the RING0 line provides an option to significantly reduce the overall current consumption of your application The behavior of the RIN...

Страница 72: ...Installation The antenna is connected by soldering the antenna pad RF_OUT i e pad 96 and its neigh boring ground pads GND i e pads 81 and 119 directly to the application s PCB Figure 38 Antenna pads T...

Страница 73: ...For type approval purposes the module can be equipped with an optional coaxial antenna con nector U FL R SMT along with other necessary components The U FL R SMT connector has been chosen as antenna r...

Страница 74: ...by the EES3 module i e the trans mission line to the antenna connector as shown in Figure 40 Within the area populated by the EES3 module the RF line width shall be reduced to 700 m and the distance t...

Страница 75: ...EES3 Hardware Interface Description 4 2 RF Line Routing Design 75 EES3_HD_v01 100b Page 75 of 118 2009 08 12 Confidential Released Figure 40 RF line on interface board All dimensions are given in mm...

Страница 76: ...ak current of power supply 3 0 A Supply voltage BATT 0 3 4 9 V Voltage at digital lines in POWER DOWN mode 0 3 0 3 V Voltage at digital lines in normal operation 0 3 3 05 or VEXT 0 3 V Voltage at anal...

Страница 77: ...hutdown is deferred until hang up 30 to 40 80 to 90 C Automatic shutdown2 Temperature measured on EES3 board Temperature measured at battery NTC 2 Due to temperature measurement uncertainty a toleranc...

Страница 78: ...idity relative Low High 10 90 at 40 C IPC JEDEC J STD 033A Air pressure Low High 70 106 kPa IEC TR 60271 3 1 1K4 IEC TR 60271 3 1 1K4 Movement of surrounding air 1 0 m s IEC TR 60271 3 1 1K4 Water rai...

Страница 79: ...0Hz the Standard s acceleration reference value was increased to 20g Shock half sinus Acceleration 500g Shock duration 1msec 1 shock per axis 6 positions x y and z DIN IEC 68 2 27 Dry heat Temperature...

Страница 80: ...lists the pads assignments Figure 41 Numbering plan for connecting pads bottom view 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 41 42 43 37 38 39...

Страница 81: ...DO 53 I2CCLK_SPICLK 93 GND 14 IGT 54 Do not use 94 GND 15 RXD0 55 EPN1 95 GND 16 CCIN 56 MICN1 96 RF_OUT 17 CCCLK 57 Do not use 97 GND 18 DAI6 58 Do not use 98 GND 19 DAI5 59 SPIDI 99 GND 20 Do not us...

Страница 82: ...drop rip ple spikes Power supply GND Ground Application Ground Charge Interface VCHARGE I VImin 3 1V VImax 7 00V This line signalizes to the pro cessor that the charger is con nected If unused keep l...

Страница 83: ...or that needs to be connected to an external pull up resistor Low state of the open collector indi cates that the module is on Vice versa high level notifies the Power down mode Therefore the line may...

Страница 84: ...l driven by the mod ule which can be used to reset any application or device con nected to the module Only effective for approximately 220ms during the assertion of IGT when the module is about to sta...

Страница 85: ...330k 4 wire serial interface for AT commands or data stream If unused keep lines open TXD1 I CTS1 O RTS1 I SIM interface specified for use with 3V SIM card CCIN I RI 100k VILmax 0 6V at I 25 A VIHmin...

Страница 86: ...OLmax 0 3V at I 1mA VOHmin 1 45V at I 0 5mA VOHmax 1 90V CCVCC O VOmin 1 70V VOtyp 1 80V VOmax 1 90V IOmax 20mA CCGND Ground I2 C inter face I2CCLK_SPIC LK O VOLmax 0 2V at I 2mA VOHmin 2 55V at I 0 5...

Страница 87: ...utput Crossover volt age Range VCRSmin 1 5V VCRSmax 2 0V Line to GND VOHmax 3 6V VOHtyp 3 2V VOHmin 3 0V at I 0 5mA VOLmax 0 2V at I 2mA VIHmin 2 24V VILmax 0 96V Driver Output Resistance Ztyp 32Ohm P...

Страница 88: ...nimum differential load 7 5Ohms The audio output can directly operate an 8 Ohm loud speaker If unused keep lines open EPN1 O MICP1 I Full Scale Input Voltage 1 6 Vpp 0dBm0 Input Voltage 1 1 Vpp At MIC...

Страница 89: ...smit burst Normal condition power control level for Pout max 400 mV Voltage ripple Normal condition power control level for Pout max f 200kHz f 200kHz 50 2 mV mV IVDDLP OFF State supply current RTC ba...

Страница 90: ...ower nominal 2W 33dBm 2W 33dBm 2W 33dBm 1 26W 31dBm 0 8W 29dBm 0 5W 27dBm 0 5W 27dBm 0 5W 27dBm 0 316W 25dBm 0 5W 27dBm 0 125W 21dBm Radio output power reduction with AT SCFG parameter ropr ropr 1 3 r...

Страница 91: ...F power nominal 1W 30dBm 1W 30dBm 1W 30dBm 0 63W 28dBm 0 4W 26dBm 0 25W 24dBm 0 4W 26dBm 0 4W 26dBm 0 25W 24dBm 0 4W 26dBm 0 1W 20dBm Radio output power reduction with AT SCFG parameter ropr ropr 1 3...

Страница 92: ...parameters adjustable by AT commands Parameter Influence to Range Gain range Calculation inBbcGain MICP MICN analogue amplifier gain of baseband controller before ADC 0 7 0 42dB 6dB steps inCalibrate...

Страница 93: ...2009 08 12 Confidential Released 5 7 2 Audio Programming Model The audio programming model shows how the signal path can be influenced by varying the AT command parameters The parameters inBbcGain an...

Страница 94: ...individual handset Direct access to speech coder Direct access to speech coder Gain setting via AT command Defaults inBbcGain outBbcGain Fix 5 2 Adjustable 2 2 Adjustable 5 1 Adjustable 5 2 Adjustable...

Страница 95: ...differential output voltage peak to peak EPP2 to EPN2 4 0 4 2 V V 32 no load Volume 32 3 14 dBm0 Full Scale Nominal differential out put voltage peak to peak EPP1 to EPN1 4 2 4 3 V V 8 no load Volume...

Страница 96: ...will lead to clipping if the default gain is used 3 The idle channel noise was measured with digital zero signal fed to decoder This can be realized by setting outCalibrate and sideTone to 0 during a...

Страница 97: ...nput voltage peak to peak for 0dBm0 MICP1 to MICN1 or AGND MICP2 to MICN2 or AGND 1 1 V MICPx must be biased with 1 25V VMIC 2 Input amplifier gain in 6dB steps inBbcGain 0 42 dB Set with AT SNFI Fine...

Страница 98: ...TS MS GSM 850 869 894 MHz E GSM 900 925 960 MHz GSM 1800 1805 1880 MHz GSM 1900 1930 1990 MHz RF power ARP with 50 load GSM 850 31 33 35 dBm E GSM 9001 1 Power control level PCL 5 31 33 35 dBm GSM 180...

Страница 99: ...ing ports of EES3 are not accessible to the user of the final product since they are installed within the device and therefore are only protected according to the Human Body Model requirements EES3 ha...

Страница 100: ...01 100b Page 100 of 118 2009 08 12 Confidential Released 6 Mechanics Mounting and Packaging 6 1 Mechanical Dimensions of EES3 Figure 43 shows the top view of EES3 and provides an overview of the board...

Страница 101: ...EES3 Hardware Interface Description 6 1 Mechanical Dimensions of EES3 101 EES3_HD_v01 100b Page 101 of 118 2009 08 12 Confidential Released Figure 44 Dimensions of EES3 all dimensions in mm...

Страница 102: ...t all pads denoted as Do not use will also have to be soldered but not electrically connected in order to ensure the best possible me chanical stability 6 2 1 SMT PCB Assembly 6 2 1 1 Land Pattern and...

Страница 103: ...nd temperature cycling Sample surface mount checks are described in 11 It is recommended to characterize land patterns before an actual PCB production taking indi vidual processes materials equipment...

Страница 104: ...t are susceptible to damage induced by absorbed moisture Cinterion s EES3 module complies with the latest revision of the IPC JEDEC J STD 020 Stan dard for moisture sensitive surface mount devices and...

Страница 105: ...eflow should generally be followed the limits listed above must not be exceeded EES3 is specified for one soldering cycle only Once EES3 is removed from the application the module will very likely be...

Страница 106: ...anufacturing site processing the modules should have ambient temperatures below 30 C and a relative humidity below 60 6 2 4 3 Baking Baking conditions are specified on the moisture sensitivity label a...

Страница 107: ...for EES3 is illustrated in Figure 48 The figure also shows the prop er part orientation The tape width is 56 mm and the EES3 modules are placed on the tape with a 36 mm pitch The reels are 330mm in d...

Страница 108: ...ng 111 EES3_HD_v01 100b Page 108 of 118 2009 08 12 Confidential Released 6 3 1 2 Barcode Label A barcode label provides detailed information on the tape and its contents It is attached to the reel Fig...

Страница 109: ...els are stored inside an MBB moisture barrier bag together with a humidity indi cator card and desiccant pouches see Figure 51 The bag is ESD protected and delimits mois ture transmission It is vacuum...

Страница 110: ...EES3 Hardware Interface Description 6 3 Packaging 111 EES3_HD_v01 100b Page 110 of 118 2009 08 12 Confidential Released Figure 52 Moisture Sensitivity Label...

Страница 111: ...ed from the MBB The humidity indicator card is a moisture indicator and is included in the MBB to show the ap proximate relative humidity level within the bag Sample humidity cards are shown in Figure...

Страница 112: ...oth lines for I2C Settings for either interface are made by using the AT SSPI command The internal pull up resistors Rp of the I2C interface can be connected to an external power supply or to the VEXT...

Страница 113: ...ST CCIN CCVCC 200nF AGND EPN1 EPP1 EPP2 EPN2 Digital Audio 7 BC847 BC847 SYNC CRS04 1nF 10pF V up to 7 0V charge Sample Application 1 8 3 4 2 2 x RP 2 1 For debug and or test purposes test points will...

Страница 114: ...nt Support Box DSB75 SIM card reader integrated on DSB75 U FL R SMT antenna connector and U FL LP antenna cable Handset type Votronic HH SI 30 3 V1 1 0 Li Ion battery capacity 1200mAh PC as MMI Figure...

Страница 115: ...ipment The EES3 reference application registered under the above identifiers is certified to be in ac cordance with the following Rules and Regulations of the Federal Communications Commis sion FCC an...

Страница 116: ...is Class B digital apparatus complies with Canadian ICES 003 Cet appareil num rique de la classe B est conforme la norme NMB 003 du Canada If the final product is not approved for use in U S territori...

Страница 117: ...rdering number L30960 N1505 A100 DSB75 Evaluation Kit Cinterion Ordering number L36880 N8811 A100 Votronic Handset VOTRONIC Votronic HH SI 30 3 V1 1 0 VOTRONIC Entwicklungs und Produktionsgesellschaft...

Страница 118: ...ong Singapore Phone 65 268 6868 Fax 65 265 6044 Molex Japan Co Ltd Yamato Kanagawa Japan Phone 81 462 65 2324 Fax 81 462 65 2366 Table 40 Hirose sales contacts subject to change Hirose Ltd For further...

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