Cinterion EES3, Описание аппаратного интерфейса

Страница: 98 / 118

EES3 Hardware Interface Description
5.8 Air Interface
99
EES3_HD_v01.100b Page 98 of 118 2009-08-12
Confidential / Released

5.8 Air Interface
Test conditions: All measurements have been performed at T
amb
= 25°C, V
BATT+ nom
= 4.0V. The
reference points used on EES3 are the BATT+ and GND contacts (test points are shown in Fig-
ure 4 ).
Table 35:
Air interface
Parameter Min Typ Max Unit
Frequency range
Uplink (MS

BTS)
GSM 850 824 849 MHz
E-GSM 900 880 915 MHz
GSM 1800 1710 1785 MHz
GSM 1900 1850 1910 MHz
Frequency range
Downlink (BTS

MS)
GSM 850 869 894 MHz
E-GSM 900 925 960 MHz
GSM 1800 1805 1880 MHz
GSM 1900 1930 1990 MHz
RF power @ ARP with 50

load GSM 850 31 33 35 dBm
E-GSM 900
1
1. Power control level PCL 5
31 33 35 dBm
GSM 1800
2
2. Power control level PCL 0
28 30 32 dBm
GSM 1900 28 30 32 dBm
Number of carriers GSM 850 124
E-GSM 900 174
GSM 1800 374
GSM 1900 299
Duplex spacing GSM 850 45 MHz
E-GSM 900 45 MHz
GSM 1800 95 MHz
GSM 1900 80 MHz
Carrier spacing 200 kHz
Multiplex, Duplex TDMA / FDMA, FDD
Time slots per TDMA frame 8
Frame duration 4.615 ms
Time slot duration 577 µs
Modulation GMSK
Receiver input sensitivity @ ARP
BER Class II < 2.4% (static input level)
GSM 850 -102 -108 dBm
E-GSM 900 -102 -108 dBm
GSM 1800 -102 -107 dBm
GSM 1900 -102 -107 dBm