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AIXTRON
- Dokumentation
CONFIDENTIAL
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System Manual
Description
CRIUS II
Reactor
3.5.6
In-situ layer thickness measurement
During the process, an optical measurement device is used for the tempera-
ture and reflection measurement on the wafers. It is mounted on the reactor
lid above the sight glass.
The CCS reactor uses one of the following systems:
•
AIXTRON Multiwafer Interferometer
•
Laytec Epi-TT (optional)
AIXTRON Multiwafer
Interferometer
The AIXTRON Multiwafer Interferometer, as a standard product for GaN
growth, provides:
•
Single wavelength reflectometry at 635 nm. It is used for highly accurate
growth rate and surface roughness measurements.
Fig. 3-18,
69 shows both the AIXTRON Multiwafer interferometer & Laytec
Epi-TT systems.
Fig. 3-18
In-situ layer thickness measurement
A Laytec Epi-TT head
B AIXTRON Multiwafer Interferometer heads
Laytec Epi-TT
The optional Laytec EpiCurve-TT system provides:
•
Single wavelength pyrometry at 950 nm
•
Single wavelength reflectometry at 950 nm (used for emissivity correction
and complete process fingerprint)
•
Single wavelength reflectometry at 600/635/700/850/905/950 nm (wave-
length depending on the type of growth process). It is used for highly accu-
rate growth rate and surface roughness measurements.