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CHAPTER 18 FLASH MEMORY
User’s Manual U13850EJ6V0UD
540
The following shows the commands for flash memory control of the V850/SB1 and V850/SB2. All of these
commands are issued from the dedicated flash programmer, and the V850/SB1 and V850/SB2 perform the various
processing corresponding to the commands.
Table 18-6. Flash Memory Control Command
Category
Command Name
Function
One-short verify command
Compares the contents of the entire memory and
the input data.
Verify
Area verify command
Compares the contents of the specified area and
the input data
Area erase command
Erases the specified area.
Erase
Writeback command
Writes back the erased contents.
One-shot blank check command
Checks the erase state of the entire memory.
Blank check
Area blank check command
Checks the erase state of the specified area.
High-speed write command
Writes data by the specification of the write
address and the number of bytes to be written,
and executes a verify check.
Data write
Continuous write command
Writes data from the address following the high-
speed write command executed immediately
before, and executes a verify check.
Status read out command
Acquires the status of operations.
Oscillating frequency setting
command
Sets the oscillation frequency.
Erasing time setting command
Sets the erasing time of one-shot erase.
Writing time setting command
Sets the writing time of data write.
Writeback time setting command
Sets the writeback time.
Baud rate setting command
Sets the baud rate when using UART.
Silicon signature command
Reads outs the silicon signature information.
System setting and control
Reset command
Escapes from each state.
The V850/SB1 and V850/SB2 send back response commands to the commands issued from the dedicated flash
programmer. The following shows the response commands the V850/SB1 and V850/SB2 send out.
Table 18-7. Response Command
Response Command Name
Function
ACK (acknowledge)
Acknowledges command/data, etc.
NAK (not acknowledge)
Acknowledges illegal command/data, etc.
18.6.5 Resources used
The resources used in the flash memory programming mode are all the FFE000H to FFE7FFH area of the internal
RAM and all the registers. The FFE800H to FFEFFFH area of the internal RAM retains data as long as the power is
on. The registers that are initialized by reset are changed to the default values.