Document Number: 001-98285 Rev. *R
Page 60 of 108
S29GL01GS/S29GL512S
S29GL256S/S29GL128S
Table 7.4
CFI System Interface String
Word Address
Data
Description
(SA) + 001Bh
0027h
V
CC
Min. (erase/program) (D7–D4: volts, D3–D0: 100 mV)
(SA) + 001Ch
0036h
V
CC
Max. (erase/program) (D7–D4: volts, D3–D0: 100 mV)
(SA) + 001Dh
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
(SA) + 001Eh
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
(SA) + 001Fh
0008h
Typical timeout per single word write 2
N
µs
(SA) + 0020h
0009h
Typical timeout for max
multi-byte program, 2
N
µs
(00h = not supported)
(SA) + 0021h
0008h
Typical timeout per individual block erase 2
N
ms
(SA) + 0022h
0012h (1 Gb)
0011h (512 Mb)
0010h (256 Mb)
000Fh (128 Mb)
Typical timeout for full chip erase 2
N
ms (00h = not supported)
(SA) + 0023h
0001h
Max. timeout for single word write 2
N
times typical
(SA) + 0024h
0002h
Max. timeout for buffer write 2
N
times typical
(SA) + 0025h
0003h
Max. timeout per individual block erase 2
N
times typical
(SA) + 0026h
0003h
Max. timeout for full chip erase 2
N
times typical
(00h = not supported)
Table 7.5
CFI Device Geometry Definition
Word Address
Data
Description
(SA) + 0027h
001Bh (1 Gb)
001Ah (512 Mb)
0019h (256 Mb)
0018h (128 Mb)
Device Size = 2
N
byte;
(SA) + 0028h
0001h
Flash Device Interface Description 0 = ×8-only, 1 = ×16-only, 2 = ×8/×16 capable
(SA) + 0029h
0000h
(SA) + 002Ah
0009h
Max. number of byte in multi-byte write = 2
N
(00 = not supported)
(SA) + 002Bh
0000h
(SA) + 002Ch
0001h
Number of Erase Block Regions within device
1 = Uniform Device, 2 = Boot Device
(SA) + 002Dh
00XXh
Erase Block Region 1 Information (refer to JEDEC JESD68-01 or JEP137
specifications)
00FFh, 0003h, 0000h, 0002h =1 Gb
00FFh, 0001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
(SA) + 002Eh
000Xh
(SA) + 002Fh
0000h
(SA) + 0030h
000Xh
(SA) + 0031h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
(SA) + 0032h
0000h
(SA) + 0033h
0000h
(SA) + 0034h
0000h
