Daewoo CB647M-EX, Manual

Page: 36 / 116

DRAM Speed Selection
- Configures the DRAM read/write speed for the
maximum performance. The available options are :
- 50ns
- 60ns(default)
MA Wait State
- select FAST or SLOW Memory Address bus timing. The
available options are :
- Slow(default)
- Fast
EDO RAS# To CAS# Delay
- sets the delay in assertion of CAS# fro m
assertion of RAS# in 66 MHz clocks. The available options are :
- 3(default)
- 2
EDO RAS# Pre c h a rge Ti m e
- DRAM must continually be re f reshed or it
will lose its data. Normally, DRAM is re f reshed entirely as the result of a
single request. This option allows you to determine the number of CPU
clocks allocated for the Row Address Strobe to accumulate its charg e
b e f o re the DRAM is re f reshed. If insufficient time is allowed, re f resh may
be incomplete and data lost. The available options are :
- 3 (default)
- 4
EDO DRAM Read Burst
- Determines the timing for burst read to the cache.
If your DRAM type is EDO DRAM, we suggest you select x222(EDO)
timing to get a better performance.
The available options are :
- x333(default) - x222
EDO DRAM Write Burst
- Determines the timing for burst write to the cache.
If your DRAM type is EDO DRAM, we suggest you select x222 (EDO)
timing to get a better performance.
The available options are :
- x222(default) - x333
DRAM Data Integrity Mode
- Provides software configurity of selecting
between ECC mode and non-ECC mode of operation of the DRAM
interface. The available options are :
- NON-ECC(default)
- ECC
CB647M-LX/EX User's Manual
3 - 1 2
CB647M-LX/EX(3장) 00.9.18 3:53 PM 페이지3-12