background image

gm=

t.Io 

at  a  given  drain  voltage

t.VG 

t:NG 10.2v -o.1v1 

10 

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.

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ei 

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'

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···

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·

·

2

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·

·

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4

··

·

·

·

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s

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Vos

:, .......... : 

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......... .i 

10 

Figure 27.  FET Gain (Transconductance)

Measurement 

is the ratio of 

change 

in drain current to the 

change

in  gate voltage at a given drain voltage.  Transcon­

ductance  is  measured  in  mhos.  As  an  example,  if 

increasing  the  gate  voltage  from  1  volt  to  1.5  volt

(6 VG  =  .5  V)  causes  the  drain  current  to  decrease

from 6 mA to 4 mA (Mo  = 2 mA) at a drain voltage 

of  6  volts,  the  forward transconductance of  the FET

is  4000  micromhos.  Another  example  is  shown  in

Figure  27. 

To calculate  gm,  note  the  diflerence in  drain  cur­

rent  between  two  curves  (6  Io),  at  the  same  drain

voltage from the  family  of curves.  Note the  change

in  gate  voltage  (6  VG)  from  the  STEP  SELECTOR

switch  setting.  Calcuate  gm  by  dividing  6  VG  into

6 Io. 

•••••••••• 

••

• •

••

•• , ........... , ........... , ........... , ........... , ........... 0 .......... , ••••••••••• , ••••••••••• , 

/  /',,/- ..  VG= 

-i

v

0,-t/i··t;;;/'-'·· :- i=j:;i::;;:::..+.a.-r""i"""-t··i···:

, ........ 

, 1., 

...... 

1/, 

.. , .... 

,,"' 

... 

,� 

........... 

, ........... 

... 

VG• 

.. ..f 

£. 

.

.. ,,;,, 

/tec.---.:'. 

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1.:,-::: 

.. 

+. 

.. 

-:.t

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-

V-tG-. """1.z-vr---1 

'!f

VG• -2.5v 

Vos 

As  with  NPN and PNP transistors,  the  gain  of  a

FET  is  not  constant over  its  entire  voltage  and  cur­

rent  range.  The  gain  is  normally  calculated  in  its

typical  operating  range.  Distortion  and  linearity

may be determined by the same method as desribed

for  transistors;  if  the  spacing  between  curves  is

equal, the FET is linear. 

Pinch-Off 

(Vp) 

Voltage Measurement 

An  important  characteristic  for  depletion  mode

FET's is the  amount of gate voltage required to turn

off  drain  current.  This  value  is  called  the pinch-off

voltage  characteristic  and  may  be  measured  from

the family of curves. 

An  example  is  shown  in  Figure  28.  Figure  28  A

shows  the  STEP  SELECTOR  set  at  .5  volt  per  step

and the entire family  of  curves  is  displ

ay

ed.  Drain

current continues  to flow at its highest  step  of -2.5

volts. Figure 28 B shows that when the STEP SELEC­

TOR  is  increased  to  1  volt  per  step  that  the  entire

family  of curves  is  not  displayed.  In  fact,  the  -3

volt, -4 volt and -5 volt curves  are  superimposed

upon each other at zero drain current.  All gate volt­

age values greater than -3 volts prevent drain cur­

rent.  We can conclude that pinch-off occurs between

-2.5  volts  and  -3  volts.  A  more  precision  meas­

urement could be made, 

if 

necessary, by connecting

an  external  de  bias  supply  to  the  gate  of  the  FET,

adjusting the  bias  supply, and  observing the exact

value of pinch-off voltage on the oscilloscope. 

........... 

'o• 

'

VG 

-lv 

Io 

.,:.---

// 

!

.. 

VG• 

'

.

,,...... 

VG= 

-3v  (PINCHED 

Vos 

Figure 28.  Determining FET Pinch-Off Voltage 

23 

Summary of Contents for 501A

Page 1: ...Model 501A Semiconductor Curve Tracer...

Page 2: ...ave helped provide better and faster service techniques Close contact has been maintained with the manufacturers of consumer products which our test units will be checking and trouble shooting Key per...

Page 3: ...INSTRUCTION MANUAL FOR B K PRECISION MODEL 501A SEMICONDUCTOR CURVE TRACER 8 K DIVISION OF DYNASCAN CORPORATION 1801 W Belle Plaine Avenue Chicago Illinois 60613 Copyright 1972...

Page 4: ...PPLICATIONS 14 Testing Bipolar Transistors 14 NPN vs PNP Transistors 14 CURRENT GAIN MEASUREMENT 14 DC Current Gain DC beta 15 AC Current Gain AC beta 15 Summary of Transistor Current Gain 16 Current...

Page 5: ...4 IC 5 6 7 8 Q 1 Q 2 3 Q 4 Q 5 6 11 12 Q 8 9 10 SW 2 SW 3 SW 4 SW 5 11 72 488 113 9 002 8 DESCRIPTION CAPACITORS B K PART No 1000 fd 35 Volt Electrolytic Capacitor 022 001 9 015 100 fd 25 Volt Electro...

Page 6: ...SJ TEP l OLA l lIt S lfilJC T TO f W f 0 1T N SOC tt SCLtCTOR SET TO lh Hr l OSIHO t I VUtf J 1 S NSITl TV SW l N l TO jl l Ai IV u 01 i t S1 l I IO i G l l G iT SO J tl T Rw t C t I 1 Ill 1S 1 IW 1 4...

Page 7: ...er general purpose oscilloscope is satisfactory as long as it has external horizontal facilities and is DC coupled The B K Models 1440 1460 and 1465 Oscilloscopes are ideal companions for the Model SO...

Page 8: ...7 8 17 16 15 14 13 12 II 10 9 18 0 0 Figure 1 Controls and Operator s Facilities 2...

Page 9: ...rts base to emit ter terminal for measuring collector emitter leakage cur rent with O Volt base bias Selects the gate voltage step value for testing FET s The unit automatically generates gate voltage...

Page 10: ...sitions of the STEP SELECTOR switch constant voltage steps are generated for testing FET s Five selections from 05 to 1 volt per step are offered The polarity of the voltage steps is inverted in relat...

Page 11: ...rent thru the semiconductor being tested and the hori zontal divisions must accurately represent the sweep voltage applied to the semiconductor being tested that is the oscilloscope must be calibrated...

Page 12: ...of reading the horizontal voltage is available by connecting the sweep voltage output of the curve tracer H jack to the horizontal input of the oscillo scope This method will produce a horizontal trac...

Page 13: ...Ground the vertical input if desired Adjust HORIZONTAL GAIN so 4 Connect a test lead from the H jack of the curve tracer to the horizontal input of the oscilloscope 5 Set the SWEEP VOLTAGE control to...

Page 14: ...aneously switched from one semiconductor to the other The SOCKET switch may also be used to start and stop the test of the semiconductor merely activate the empty socket to stop the test This allows c...

Page 15: ...ied for testing zener diodes leakage of signal and rectifier diodes and inverse peak breakdown voltage Forward bias characteristics show voltage drop across the diode junction and resistive or open co...

Page 16: ...t r 3 2ti l p pr t r 1 l 0 2 3 6 7 8 9 10 ADJUST OSCIL LOSCOPE CENTERING CONTROLS TO PLACE START OF ZERO REFERENCE STEP HERE NPN transistors the display should be posi tioned so the curves start at th...

Page 17: ...f the display Increasing the setting widens the display and may cause the display to go off scale Decrease and increase the setting of the control and note the effect upon the display If increasing th...

Page 18: ...s displayed on the VERTICAL SENSITIVITY range being used If the setting is too high some of the curves may reach the current limiting value and be superim posed on each other causing less than five cu...

Page 19: ...ideal for making contact to transistors mounted on P C Boards Refer to the In circuit Probe section for more information When performing in circuit tests use the fast set up markers on the 501 front...

Page 20: ...turn the VERTICAL SENSITIVITY to the 1 mA Div position after each test so that the next test begins with full protection NPN vs PNP Transistors As described previously in the Typical Test section the...

Page 21: ...ent point Simply approx imate the percentage of distance between the curves above and below the poin use it as a percentage of one step to obtain total base current when added to the number of current...

Page 22: ...to gether at higher collector current Each base current step has precisely the same amount of increase which should cause the collector current curves to be separated by equal amounts if the gain wer...

Page 23: ...d does not introduce distortion If 6 10 s are imbalanced distortion will be intro duced due to this non linearity The greater the im balance the greater the distortion The distortion measurement can b...

Page 24: ...would be destroyed by the test Figure 21 shows a typical family of curves with the sweep voltage set high to cause collector break down In the examples shown in the figure break down occurs at a coll...

Page 25: ...t portion of the family of curves in the area of low collector voltage and current below the knee of each curve Notice that the knee of each curve occurs at approximately the same collector voltage re...

Page 26: ...tance The transistor s output impedance or collector resistance is the reciprocal of its output admittance and is measured in ohms It may be calculated by transposing the current and voltage values us...

Page 27: ...collector voltage at various base currents FET curves are a graph of drain current vs drain voltage at various gate voltages FET breakdown voltage may be observed and measured by the same method used...

Page 28: ...e MOS FET s can be damaged by a voltage transient from a static charge carried by the person handling the device Safeguard against such damage and discharge any static charge by touching ground with o...

Page 29: ...ty may be determined by the same method as desribed for transistors if the spacing between curves is equal the FET is linear Pinch Off Vp Voltage Measurement An important characteristic for depletion...

Page 30: ...scale GERMANIUM SILICON 1 100 80 Io ma 0 5 1 1 5 VF volts FORWARD BIAS 2 2 5 When testing diodes only one curve is displayed not a family of curves as displayed for transistors and FET s The forward b...

Page 31: ...OLT j _ _ 2 I I I ZENER I i 1 1 filgl i I i l j i I I I H i_ i t lJ__tH 10 a 6 VR 4 2 o SHARP ZENER KNEE To obtain the most accurate voltage reading pos sible calibrate the full scale oscilloscope hor...

Page 32: ...y The curves C E appear quite close together and careful observation may be required to distinguish the individual curves It may be helpful to spread out the display by in creasing the horizontal sens...

Page 33: ...e Any anode current at anode voltage below the firing point is forward leakage current and can be read directly from the display Reverse Blocking Voltage Reverse blocking voltage is the maximum revers...

Page 34: ...age and increase the de bias supply until the SCR switches on Measure the value of gate voltage at which switching occurred 2 Set the de bias supply to a specified gate volt age and increase the sweep...

Page 35: ...I I 1 Vp t I I I I 10 I 1 i I i 1 L 1 1 I 1 I 5 I i I 1 5 J MA I I l l Ip peak current start of tunnel region Iv valley current end of tunnel region Vp peak voltage start of tunnel region Vv valley v...

Page 36: ...y soldered wires short TP30 TP31 and TP32 to the S Volt line on the PC board 4 Attach a digital voltmeter to TP29 and turn on AC power to the unit 5 Adjust the CALIBRATE pot R36 for a reading of 3 50...

Page 37: ...board It is most important to follow the explicit control setting and set up pro cedure as given in the notes column in order to obtain the illustrated waveforms Point by point sig nal tracing with a...

Page 38: ...VAC 50 IOkl l IG H VOLTAGE ECONO Ut f aiJitllttN1 u nsim R Sl l0ll S 6 SEL CTOR to a countdown chain composed of 3 flip flops within two IC packages IC3 and 4 The second flip flop of IC4 is not used...

Page 39: ...through the SOCKET SELEC TOR to the desired test socket RIGHT or LEFT The higher voltage secondary of the power trans former is full wave rectified by a diode bridge DI through D4 to produce a 120Hz s...

Page 40: ...se new from an authorl r ed B K distributor Our obligation under this warranty is limited to repairing or replacing any product or component which we are satisfied does not conform with the fore going...

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