background image

AC  beta 

=

610 

2 mA 

200 

.6I

.01  mA 

The  .6  Ic  measurement  is  usually  made  between 

the  centermost  curves  of  the  display.  The 

.6 

Ic 

measurement  may  be  made  between  two  non-ad­

jacent curves if  desired.  For example, the  difference 

between  the  collector  current  of  the  second  and 

fourth  curves  may  be  used  for  measurement  of 

.6 

I

0• 

If  this  method  is  used,  be  sure  to  include  two 

steps  of  base  current  for  determining 

.6 

In  when 

calculating  beta  (refer  to  Fig.  l8B). 

If  the  transistor  data  sheet  is  available,  beta 

should  be  measured  at  the  approximate  collector 

current  and  voltage  specified.  If  not,  the  STEP 

SELECTOR is usually adjusted  for  a  display  of  the 

most  evenly  and  widely  spaced  curves. 

Summary of Transistor Current Gain 

Note  that  the  beta  of  a  transistor  is  not  constant, 

but  is  dependent  upon  the  point  of  measurement. 

The  distance  between  all  curves  is  seldom  equal, 

which  means  that  .6  le  is  not  the  same  at  various 

regions  of  base  current  and,  to  some  lesser  extent, 

at  various  collector  voltages.  Base  current  values 

that  produce  curves  that  are  closer  together  are  in 

the region of lower  gain.  Gain  is  usually  higher  in 

the normal operating region of the transistor and is 

lower  at  collector  currents  above  or below the  nor­

mal operating  region. 

Current Gain Linearity vs. Distortion 

Measuring  the  linearity  and  distortion  of  a  tran­

sistor  is  an  extension  of  the  gain  or  beta  test.  As 

pointed  out in  the  beta  test  procedure,  beta  is  not 

necessarily  constant,  but  may  vary  with  collector 

current.  When  such  variation  of  gain  occurs,  the 

transistor  in  non-linear  and  will  introduce  distor­

tion  if  operated  in  the  non-linear  region.  Typically, 

transistors  have  lower  current  gain  at  high  values 

of collector  current as shown  in Figure  ISA.  This  is 

apparent  by  the  fact  that  the  curves  are  closer  to­

gether at higher collector current. Each base  current 

step  has  precisely  the  same  amount  of  increase, 

which  should  cause  the  collector  current  curves  to 

be  separated  by  equal  amounts  if  the  gain  were 

constant. When gain decreases, the curves are closer 

together.  Some  transistors  have an opposite charac­

teristic  in  that  their  gain  increases  at  high  values 

of  collector  current  (Figure  l9B).  A  few  transistor 

types  have  nearly  uniform  gain  over  a  very  wide 

range of  collector current. Such transistors have low 

distortion and a wide region of linearity. The curves 

from such transistors are equally spaced. 

Not  all  applications  require  that  the  transistors 

have  good  linearity  and  distortion-free  characteris­

tics. Examples  are  switching  transistors,  some  class 

C amplifiers, and frequency multipliers. In fact, some 

applications  require  non-linearity  and  depend  upon 

this  characteristic  for  operation.  Of  course,  most 

class A and B amplifiers, including audio and video 

amplifiers, do require linear and distortion-free oper­

ation  over  the  dynamic  range  of  the  input  signal. 

For  most  small  signal  applications,  a  linear  region 

can  usually  be  found.  For  larger  signals,  a  wider 

linear  region is  required. 

To  measure  linearity  and  distortion,  adjust  the 

STEP SELECTOR control for the most evenly spaced 

display  of  curves,  or  so  that  the  centermost  curves 

of the display are the most evenly spaced. Note that 

it will not be possible to obtain evenly spaced curves 

for some  transistor  types.  Set  the  sweep  voltage  to 

approach,  but  not  reach, collector breakdown.  Note 

that the curves are  somewhat  shorter at  higher  col­

lector  currents.  Plot  an  imaginary  line  along  the 

ends of  the  curves  as  shown  in  Figure  20.  This  line 

is  called  the  "Test  Load  Line".  Plot  an  "Operating 

(  l  _ 

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AC  CURRENT  GAIN  hfe  - �lb

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4111 

16 

2,nA 

fl: 

ro;;.

Ve 

!volts) 

fJ: 

200  at Ve of 5voltt 

10 

R:  3.5mA 

f-'  20µA 

fl: 175  at  \le af  5voltt 

10r·· 

········· ,,··=:., 

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10 

Figure 18.  AC Current Gain (AC Beta) Measurement 

!

Summary of Contents for 501A

Page 1: ...Model 501A Semiconductor Curve Tracer...

Page 2: ...ave helped provide better and faster service techniques Close contact has been maintained with the manufacturers of consumer products which our test units will be checking and trouble shooting Key per...

Page 3: ...INSTRUCTION MANUAL FOR B K PRECISION MODEL 501A SEMICONDUCTOR CURVE TRACER 8 K DIVISION OF DYNASCAN CORPORATION 1801 W Belle Plaine Avenue Chicago Illinois 60613 Copyright 1972...

Page 4: ...PPLICATIONS 14 Testing Bipolar Transistors 14 NPN vs PNP Transistors 14 CURRENT GAIN MEASUREMENT 14 DC Current Gain DC beta 15 AC Current Gain AC beta 15 Summary of Transistor Current Gain 16 Current...

Page 5: ...4 IC 5 6 7 8 Q 1 Q 2 3 Q 4 Q 5 6 11 12 Q 8 9 10 SW 2 SW 3 SW 4 SW 5 11 72 488 113 9 002 8 DESCRIPTION CAPACITORS B K PART No 1000 fd 35 Volt Electrolytic Capacitor 022 001 9 015 100 fd 25 Volt Electro...

Page 6: ...SJ TEP l OLA l lIt S lfilJC T TO f W f 0 1T N SOC tt SCLtCTOR SET TO lh Hr l OSIHO t I VUtf J 1 S NSITl TV SW l N l TO jl l Ai IV u 01 i t S1 l I IO i G l l G iT SO J tl T Rw t C t I 1 Ill 1S 1 IW 1 4...

Page 7: ...er general purpose oscilloscope is satisfactory as long as it has external horizontal facilities and is DC coupled The B K Models 1440 1460 and 1465 Oscilloscopes are ideal companions for the Model SO...

Page 8: ...7 8 17 16 15 14 13 12 II 10 9 18 0 0 Figure 1 Controls and Operator s Facilities 2...

Page 9: ...rts base to emit ter terminal for measuring collector emitter leakage cur rent with O Volt base bias Selects the gate voltage step value for testing FET s The unit automatically generates gate voltage...

Page 10: ...sitions of the STEP SELECTOR switch constant voltage steps are generated for testing FET s Five selections from 05 to 1 volt per step are offered The polarity of the voltage steps is inverted in relat...

Page 11: ...rent thru the semiconductor being tested and the hori zontal divisions must accurately represent the sweep voltage applied to the semiconductor being tested that is the oscilloscope must be calibrated...

Page 12: ...of reading the horizontal voltage is available by connecting the sweep voltage output of the curve tracer H jack to the horizontal input of the oscillo scope This method will produce a horizontal trac...

Page 13: ...Ground the vertical input if desired Adjust HORIZONTAL GAIN so 4 Connect a test lead from the H jack of the curve tracer to the horizontal input of the oscilloscope 5 Set the SWEEP VOLTAGE control to...

Page 14: ...aneously switched from one semiconductor to the other The SOCKET switch may also be used to start and stop the test of the semiconductor merely activate the empty socket to stop the test This allows c...

Page 15: ...ied for testing zener diodes leakage of signal and rectifier diodes and inverse peak breakdown voltage Forward bias characteristics show voltage drop across the diode junction and resistive or open co...

Page 16: ...t r 3 2ti l p pr t r 1 l 0 2 3 6 7 8 9 10 ADJUST OSCIL LOSCOPE CENTERING CONTROLS TO PLACE START OF ZERO REFERENCE STEP HERE NPN transistors the display should be posi tioned so the curves start at th...

Page 17: ...f the display Increasing the setting widens the display and may cause the display to go off scale Decrease and increase the setting of the control and note the effect upon the display If increasing th...

Page 18: ...s displayed on the VERTICAL SENSITIVITY range being used If the setting is too high some of the curves may reach the current limiting value and be superim posed on each other causing less than five cu...

Page 19: ...ideal for making contact to transistors mounted on P C Boards Refer to the In circuit Probe section for more information When performing in circuit tests use the fast set up markers on the 501 front...

Page 20: ...turn the VERTICAL SENSITIVITY to the 1 mA Div position after each test so that the next test begins with full protection NPN vs PNP Transistors As described previously in the Typical Test section the...

Page 21: ...ent point Simply approx imate the percentage of distance between the curves above and below the poin use it as a percentage of one step to obtain total base current when added to the number of current...

Page 22: ...to gether at higher collector current Each base current step has precisely the same amount of increase which should cause the collector current curves to be separated by equal amounts if the gain wer...

Page 23: ...d does not introduce distortion If 6 10 s are imbalanced distortion will be intro duced due to this non linearity The greater the im balance the greater the distortion The distortion measurement can b...

Page 24: ...would be destroyed by the test Figure 21 shows a typical family of curves with the sweep voltage set high to cause collector break down In the examples shown in the figure break down occurs at a coll...

Page 25: ...t portion of the family of curves in the area of low collector voltage and current below the knee of each curve Notice that the knee of each curve occurs at approximately the same collector voltage re...

Page 26: ...tance The transistor s output impedance or collector resistance is the reciprocal of its output admittance and is measured in ohms It may be calculated by transposing the current and voltage values us...

Page 27: ...collector voltage at various base currents FET curves are a graph of drain current vs drain voltage at various gate voltages FET breakdown voltage may be observed and measured by the same method used...

Page 28: ...e MOS FET s can be damaged by a voltage transient from a static charge carried by the person handling the device Safeguard against such damage and discharge any static charge by touching ground with o...

Page 29: ...ty may be determined by the same method as desribed for transistors if the spacing between curves is equal the FET is linear Pinch Off Vp Voltage Measurement An important characteristic for depletion...

Page 30: ...scale GERMANIUM SILICON 1 100 80 Io ma 0 5 1 1 5 VF volts FORWARD BIAS 2 2 5 When testing diodes only one curve is displayed not a family of curves as displayed for transistors and FET s The forward b...

Page 31: ...OLT j _ _ 2 I I I ZENER I i 1 1 filgl i I i l j i I I I H i_ i t lJ__tH 10 a 6 VR 4 2 o SHARP ZENER KNEE To obtain the most accurate voltage reading pos sible calibrate the full scale oscilloscope hor...

Page 32: ...y The curves C E appear quite close together and careful observation may be required to distinguish the individual curves It may be helpful to spread out the display by in creasing the horizontal sens...

Page 33: ...e Any anode current at anode voltage below the firing point is forward leakage current and can be read directly from the display Reverse Blocking Voltage Reverse blocking voltage is the maximum revers...

Page 34: ...age and increase the de bias supply until the SCR switches on Measure the value of gate voltage at which switching occurred 2 Set the de bias supply to a specified gate volt age and increase the sweep...

Page 35: ...I I 1 Vp t I I I I 10 I 1 i I i 1 L 1 1 I 1 I 5 I i I 1 5 J MA I I l l Ip peak current start of tunnel region Iv valley current end of tunnel region Vp peak voltage start of tunnel region Vv valley v...

Page 36: ...y soldered wires short TP30 TP31 and TP32 to the S Volt line on the PC board 4 Attach a digital voltmeter to TP29 and turn on AC power to the unit 5 Adjust the CALIBRATE pot R36 for a reading of 3 50...

Page 37: ...board It is most important to follow the explicit control setting and set up pro cedure as given in the notes column in order to obtain the illustrated waveforms Point by point sig nal tracing with a...

Page 38: ...VAC 50 IOkl l IG H VOLTAGE ECONO Ut f aiJitllttN1 u nsim R Sl l0ll S 6 SEL CTOR to a countdown chain composed of 3 flip flops within two IC packages IC3 and 4 The second flip flop of IC4 is not used...

Page 39: ...through the SOCKET SELEC TOR to the desired test socket RIGHT or LEFT The higher voltage secondary of the power trans former is full wave rectified by a diode bridge DI through D4 to produce a 120Hz s...

Page 40: ...se new from an authorl r ed B K distributor Our obligation under this warranty is limited to repairing or replacing any product or component which we are satisfied does not conform with the fore going...

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