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OUTPUT  ADMITTANCE  Ch

oe

The  dynamic  output  admittance  of  a  transistor  is 

the  measurement  of the 

change 

in  collector  current 

(.6Ic)  resulting  from  a  specific 

change 

in  collector 

voltage  (.6 Vo)  at  a  constant  base  current.  Admit­

tance  is  measured  in  mhos.  The  "h"  parameter  for 

output  admittance  in  the  common  emitter  configura­

tion  is  stated  as: 

Example: 

.6Ic 

I4mA - l lmA _ 3mA  _  .75 millimhos or

/\V 

7V  3V 

- 4V  - 750 µmhos at 

-

In of  150 p,A 

A  change  in  coll

ec

tor  voltage  normally  causes 

change in collector current. For some transistors, the 

effect  is quite  apparent  b

ec

ause  the  curves  h

av

e  a 

noticeable  slope.  Such  a  transistor  has  a  compara­

tively  high  output  admittance. Other  transistors  dis­

play  a  near  horizontal  curve  with  a  very  small 

change  in  collector  current.  These  transistors  have 

a low output admittance. 

Output  admittance  is  measured  from  the  same 

family  of  curves  as  displayed  for  gain  or  beta 

measurement.  The  measurement  is  taken  at  a  con­

stant  base  current, that  is,  along  one  of  the  curves 

in the  display.  If specification data is used for refer­

ence,  use  the  base  current  specified.  Otherwise, 

select  a  base  current  curve  that  is  typical  for  the 

normal operating range of the transistor being tested. 

The  measurement  is  made  between  two  specific 

collector  voltages.  When  testing  per  specification, 

use  the  specified  voltages.  Without  specifications, 

select  two  voltages,  one  just  above  the  saturation 

knee of the curve and one somewhat below collector 

breakdown.  For  measuring  very  small  .6I

values, 

a higher  vertical gain for  the  oscilloscope would  be 

helpful, but the oscilloscope must remain calibrated. 

If  the  oscilloscope  gain  can  be  increased  in  steps, 

such as  10: l, without changing the fine vertical sensi­

tivity  setting,  the  use  of  such  a  setting  m

ay 

be 

OUTPUT  ADMITTANCE 

20, 

............. 

1a, 

... 

I

16,  ········-'.········ 

14, .... 

Ic 10! 

_  LHc 

hoe  - t:Nc 

2,r'· ........ , ............ , ........... , ........... , ........... , ........... , ........... , ........... , ............ , ........... , 

o...._.....___.2 __ 

3_..._4_.._5_6 

__ 1 

___ 

_.a 

_.9 __ 

hoe 

=  Ale 

AVc 

valuable. 

vc  l-1wc-l

h

oe 

= 750 µmhos  at 

lb  ol  150µA 

Figure 24.  Output Admittance 

The  transistor's  output  impedance  (or  collector 

resistance)  is  the  reciprocal  of its output admittance 

and  is  measured  in  ohms.  It may  be calculated  by 

transposing the  current  and voltage values  used  in 

determining  output  admittance.  The  transistor  pro­

vides  maximum  power  transfer  if  the  lead  impe­

dance equals  the  transistor's output  impedance. 

Example: 

Output Impedance 

Ice

Ve  3 mA 

1;- = � = 1.33 Kn

EFFECTS  OF  TEMPERATURE 

The  conduction  of  current  through  a  transistor 

results  in  heat  generation.  The  amount  of  heat 

increases  with  the  value  of  collector  voltage  and 

current. An  excessive heat build-up  will  result if the 

transistor  cannot  dissipate  the  heat  generated.  If 

excessive  heat  is  generated  while  testing  with  the 

curve  tracer,  the  results  can  easily  be  detected  in 

the displ

ay

A high temperature may produce a noticeable loop 

in  the  curves  (Figure  25A).  Collector  capacitance 

or  inductance  can  also  cause  a  loop  in  the  curves 

but  can  be  distinguished  from  a  temperature  loop. 

For  a temperature  loop, the  loop  size d

ec

reases  and 

disappears  when the  base  current  steps  or  collector 

voltage  are  reduced.  The  reason  for  the  loop  in  the 

curves  is  that  collector  current  does  not  increase 

and  decrease  at  the  same  rate  when  the  sweep 

voltage  is  applied.  As  sweep  voltage  starts  from 

20 

zero,  the  transistor  is  cool.  As  the  sweep  voltage 

increases  to  maximum,  a  collector  current  sweep  is 

made.  Meanwhile,  the  temperature  is  increasing. 

The  temperature  increase  causes  an  additional 

amount  of  coll

ec

tor  current.  As  the  sweep  voltage 

returns  to  zero,  the collector current  decreases,  but 

at  a  lag.  During  the return  sweep,  the  temperature 

drops  from  maximum  to  normal,  but  a  time  lag  is 

required  for  this  cooling  to  occur.  Therefore,  the 

top  portion  of  the  loop  is  the  increasing  sweep 

current  and  the  bottom  portion  of  the  loop  is  the 

decreasing  sweep current. 

Another effect in  some transistors  is  that  coll

ec

tor 

current  droops  at

the  high  end  of  the  curve.  In  this 

case, the increase in temperature causes a decrease 

in  collector  current  (Figure  25B). 

Excessive  current  to  the  extent  that  thermal  run­

away  begins  is  observed  as  a  "vertical  roll"  effect. 

Summary of Contents for 501A

Page 1: ...Model 501A Semiconductor Curve Tracer...

Page 2: ...ave helped provide better and faster service techniques Close contact has been maintained with the manufacturers of consumer products which our test units will be checking and trouble shooting Key per...

Page 3: ...INSTRUCTION MANUAL FOR B K PRECISION MODEL 501A SEMICONDUCTOR CURVE TRACER 8 K DIVISION OF DYNASCAN CORPORATION 1801 W Belle Plaine Avenue Chicago Illinois 60613 Copyright 1972...

Page 4: ...PPLICATIONS 14 Testing Bipolar Transistors 14 NPN vs PNP Transistors 14 CURRENT GAIN MEASUREMENT 14 DC Current Gain DC beta 15 AC Current Gain AC beta 15 Summary of Transistor Current Gain 16 Current...

Page 5: ...4 IC 5 6 7 8 Q 1 Q 2 3 Q 4 Q 5 6 11 12 Q 8 9 10 SW 2 SW 3 SW 4 SW 5 11 72 488 113 9 002 8 DESCRIPTION CAPACITORS B K PART No 1000 fd 35 Volt Electrolytic Capacitor 022 001 9 015 100 fd 25 Volt Electro...

Page 6: ...SJ TEP l OLA l lIt S lfilJC T TO f W f 0 1T N SOC tt SCLtCTOR SET TO lh Hr l OSIHO t I VUtf J 1 S NSITl TV SW l N l TO jl l Ai IV u 01 i t S1 l I IO i G l l G iT SO J tl T Rw t C t I 1 Ill 1S 1 IW 1 4...

Page 7: ...er general purpose oscilloscope is satisfactory as long as it has external horizontal facilities and is DC coupled The B K Models 1440 1460 and 1465 Oscilloscopes are ideal companions for the Model SO...

Page 8: ...7 8 17 16 15 14 13 12 II 10 9 18 0 0 Figure 1 Controls and Operator s Facilities 2...

Page 9: ...rts base to emit ter terminal for measuring collector emitter leakage cur rent with O Volt base bias Selects the gate voltage step value for testing FET s The unit automatically generates gate voltage...

Page 10: ...sitions of the STEP SELECTOR switch constant voltage steps are generated for testing FET s Five selections from 05 to 1 volt per step are offered The polarity of the voltage steps is inverted in relat...

Page 11: ...rent thru the semiconductor being tested and the hori zontal divisions must accurately represent the sweep voltage applied to the semiconductor being tested that is the oscilloscope must be calibrated...

Page 12: ...of reading the horizontal voltage is available by connecting the sweep voltage output of the curve tracer H jack to the horizontal input of the oscillo scope This method will produce a horizontal trac...

Page 13: ...Ground the vertical input if desired Adjust HORIZONTAL GAIN so 4 Connect a test lead from the H jack of the curve tracer to the horizontal input of the oscilloscope 5 Set the SWEEP VOLTAGE control to...

Page 14: ...aneously switched from one semiconductor to the other The SOCKET switch may also be used to start and stop the test of the semiconductor merely activate the empty socket to stop the test This allows c...

Page 15: ...ied for testing zener diodes leakage of signal and rectifier diodes and inverse peak breakdown voltage Forward bias characteristics show voltage drop across the diode junction and resistive or open co...

Page 16: ...t r 3 2ti l p pr t r 1 l 0 2 3 6 7 8 9 10 ADJUST OSCIL LOSCOPE CENTERING CONTROLS TO PLACE START OF ZERO REFERENCE STEP HERE NPN transistors the display should be posi tioned so the curves start at th...

Page 17: ...f the display Increasing the setting widens the display and may cause the display to go off scale Decrease and increase the setting of the control and note the effect upon the display If increasing th...

Page 18: ...s displayed on the VERTICAL SENSITIVITY range being used If the setting is too high some of the curves may reach the current limiting value and be superim posed on each other causing less than five cu...

Page 19: ...ideal for making contact to transistors mounted on P C Boards Refer to the In circuit Probe section for more information When performing in circuit tests use the fast set up markers on the 501 front...

Page 20: ...turn the VERTICAL SENSITIVITY to the 1 mA Div position after each test so that the next test begins with full protection NPN vs PNP Transistors As described previously in the Typical Test section the...

Page 21: ...ent point Simply approx imate the percentage of distance between the curves above and below the poin use it as a percentage of one step to obtain total base current when added to the number of current...

Page 22: ...to gether at higher collector current Each base current step has precisely the same amount of increase which should cause the collector current curves to be separated by equal amounts if the gain wer...

Page 23: ...d does not introduce distortion If 6 10 s are imbalanced distortion will be intro duced due to this non linearity The greater the im balance the greater the distortion The distortion measurement can b...

Page 24: ...would be destroyed by the test Figure 21 shows a typical family of curves with the sweep voltage set high to cause collector break down In the examples shown in the figure break down occurs at a coll...

Page 25: ...t portion of the family of curves in the area of low collector voltage and current below the knee of each curve Notice that the knee of each curve occurs at approximately the same collector voltage re...

Page 26: ...tance The transistor s output impedance or collector resistance is the reciprocal of its output admittance and is measured in ohms It may be calculated by transposing the current and voltage values us...

Page 27: ...collector voltage at various base currents FET curves are a graph of drain current vs drain voltage at various gate voltages FET breakdown voltage may be observed and measured by the same method used...

Page 28: ...e MOS FET s can be damaged by a voltage transient from a static charge carried by the person handling the device Safeguard against such damage and discharge any static charge by touching ground with o...

Page 29: ...ty may be determined by the same method as desribed for transistors if the spacing between curves is equal the FET is linear Pinch Off Vp Voltage Measurement An important characteristic for depletion...

Page 30: ...scale GERMANIUM SILICON 1 100 80 Io ma 0 5 1 1 5 VF volts FORWARD BIAS 2 2 5 When testing diodes only one curve is displayed not a family of curves as displayed for transistors and FET s The forward b...

Page 31: ...OLT j _ _ 2 I I I ZENER I i 1 1 filgl i I i l j i I I I H i_ i t lJ__tH 10 a 6 VR 4 2 o SHARP ZENER KNEE To obtain the most accurate voltage reading pos sible calibrate the full scale oscilloscope hor...

Page 32: ...y The curves C E appear quite close together and careful observation may be required to distinguish the individual curves It may be helpful to spread out the display by in creasing the horizontal sens...

Page 33: ...e Any anode current at anode voltage below the firing point is forward leakage current and can be read directly from the display Reverse Blocking Voltage Reverse blocking voltage is the maximum revers...

Page 34: ...age and increase the de bias supply until the SCR switches on Measure the value of gate voltage at which switching occurred 2 Set the de bias supply to a specified gate volt age and increase the sweep...

Page 35: ...I I 1 Vp t I I I I 10 I 1 i I i 1 L 1 1 I 1 I 5 I i I 1 5 J MA I I l l Ip peak current start of tunnel region Iv valley current end of tunnel region Vp peak voltage start of tunnel region Vv valley v...

Page 36: ...y soldered wires short TP30 TP31 and TP32 to the S Volt line on the PC board 4 Attach a digital voltmeter to TP29 and turn on AC power to the unit 5 Adjust the CALIBRATE pot R36 for a reading of 3 50...

Page 37: ...board It is most important to follow the explicit control setting and set up pro cedure as given in the notes column in order to obtain the illustrated waveforms Point by point sig nal tracing with a...

Page 38: ...VAC 50 IOkl l IG H VOLTAGE ECONO Ut f aiJitllttN1 u nsim R Sl l0ll S 6 SEL CTOR to a countdown chain composed of 3 flip flops within two IC packages IC3 and 4 The second flip flop of IC4 is not used...

Page 39: ...through the SOCKET SELEC TOR to the desired test socket RIGHT or LEFT The higher voltage secondary of the power trans former is full wave rectified by a diode bridge DI through D4 to produce a 120Hz s...

Page 40: ...se new from an authorl r ed B K distributor Our obligation under this warranty is limited to repairing or replacing any product or component which we are satisfied does not conform with the fore going...

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