120
ATtiny26(L)
1477G–AVR–03/05
Notes:
1. t
WLRH
is valid for the Write Flash, Write EEPROM, Write Fuse bits and Write Lock
bits commands.
2. t
WLRH_CE
is valid for the Chip Erase command.
Table 58. Parallel Programming Characteristics, V
CC
= 5V ± 10%
Symbol
Parameter
Min
Typ
Max
Units
V
PP
Programming Enable Voltage
11.5
12.5
V
I
PP
Programming Enable Current
250
µ
A
t
DVXH
Data and Control Valid before XTAL1 High
67
ns
t
XLXH
XTAL1 Low to XTAL1 High
200
ns
t
XHXL
XTAL1 Pulse Width High
150
ns
t
XLDX
Data and Control Hold after XTAL1 Low
67
ns
t
XLWL
XTAL1 Low to WR Low
0
ns
t
WLBX
BS2/1 Hold after WR Low
67
ns
t
BVWL
BS1 Valid to WR Low
67
ns
t
WLWH
WR Pulse Width Low
150
ns
t
WLRL
WR Low to RDY/BSY Low
0
1
µ
s
t
WLRH
WR Low to RDY/BSY High
3.7
4.5
ms
t
WLRH_CE
WR Low to RDY/BSY High for Chip Erase
7.5
9
ms
t
XLOL
XTAL1 Low to OE Low
0
ns
t
BVDV
BS1 Valid to DATA valid
0
250
ns
t
OLDV
OE Low to DATA Valid
250
ns
t
OHDZ
OE High to DATA Tri-stated
250
ns