Atmel AT32UC3L016, Manual

Page: 46 / 88

46
32099DS–06/2010
AT32UC3L016/32/64
Notes: 1. V
VDD
corresponds to either V
VDDIN
or V
VDDIO
, depending on the supply for the pad. Refer to Section 3.2 on page 9 for details.
Notes: 1. V
VDD
corresponds to either V
VDDIN
or V
VDDIO
, depending on the supply for the pad. Refer to Section 3.2 on page 9 for details.
7.7 Oscillator Characteristics
7.7.1 Oscillator 0 (OSC0) Characteristics
7.7.1.1 Digital Clock Characteristics
The following table describes the characteristics for the oscillator when a digital clock is applied
on XIN.
Table 7-9. 5V Tolerant High-drive I/O Pad Characteristics
(1)
Symbol Parameter Condition Min Typ Max Units
R
PULLUP
Pull-up resistance 30 50 110 kOhm
V
IL
Input low-level voltage
V
VDD
= 3.0V -0.3 0.3*V
VDD
V
V
VDD
= 1.62V -0.3 0.3*V
VDD
V
IH
Input high-level voltage
V
VDD
= 3.6V 0.7*V
VDD
5.5
V
V
VDD
= 1.98V 0.7*V
VDD
5.5
V
OL
Output low-level voltage
V
VDD
= 3.0V, I
OL
= 6mA 0.4
V
V
VDD
= 1.62 V, I
OL
= 4mA 0.4
V
OH
Output high-level voltage
V
VDD
= 3.0V, I
OH
= 6mA V
VDD
-0.4
V
V
VDD
= 1.62 V, I
OH
= 4mA V
VDD
-0.4
I
LEAK
Input leakage current 5.5V, pull-up resistors disabled 1 µA
Table 7-10. TWI Pad Characteristics
(1)
Symbol Parameter Condition Min Typ Max Units
R
PULLUP
Pull-up resistance 25 35 50 kOhm
V
IL
Input low-level voltage
V
VDD
= 3.0V -0.3 0.3*V
VDD
V
V
VDD
= 1.62V -0.3 0.3*V
VDD
V
IH
Input high-level voltage
V
VDD
= 3.6V 0.7*V
VDD
V
VDD
+ 0.3
V
V
VDD
= 1.98V 0.7*V
VDD
V
VDD
+ 0.3
V
OL
Output low-level voltage I
OL
= 3mA 0.4 V
I
LEAK
Input leakage current Pull-up resistors disabled 1 µA
I
IL
Input low leakage 1 µA
I
IH
Input high leakage 1 µA
f
MAX
Max frequency Cbus = 400pF, V
VDD
> 2.0V 400 kHz
Table 7-11. Digital Clock Characteristics
Symbol Parameter Conditions Min Typ Max Units
f
CPXIN
XIN clock frequency 50 MHz
t
CPXIN
XIN clock duty cycle 40 60 %