
Page 4
Background
AN 436: Using DDR3 SDRAM in Stratix III and Stratix IV Devices
© November 2008
Altera Corporation
compares DDR, DDR2, and DDR3 SDRAM features.
IOE Dedicated DDR3 SDRAM Features
Stratix III devices have enhanced upon the IOE DDR capabilities of previous
generations of devices by including the following functionality availability directly in
the IOE.
■
DDR registers
■
Alignment and synchronization registers (including I/O clock divider)
■
Half data-rate registers
■
DQS phase-shift circuitry (up to four DLLs each with two-phase offsets)
■
DQS postamble circuitry
Table 2.
DDR and DDR2 SDRAM Features
Feature
DDR SDRAM
DDR2 SDRAM
DDR3 SDRAM
DDR3 SDRAM Advantage
Voltage
2.5 V
1.8 V
1.5 V
Reduces memory system
power demand by 17%.
Density
64 MB to 1GB
256 MB to 4 GB
512 MB to 8 GB
High-density components
simplify memory
subsystem.
Internal banks
4
4 and 8
8
Page-to-hit ratio increased.
Prefetch
2
4
8
Lower memory core speed
results in higher operating
frequency and lower power
operation.
Speed
100 to 200 MHz
200 to 533 MHz
300 to 800 MHz
Higher data rate.
Read latency
2, 2.5, 3 clocks
3, 4, 5 clocks
5, 6, 7, 8, 9, 10, and
11
Eliminating half clock
setting allows 8n prefetch
architecture.
Additive latency
—
0, 1, 2, 3, 4
0, CL1, or CL2
Improves command
efficiency.
Write latency
One clock
Read latency – 1
5, 6, 7, or 8
Improves command
efficiency.
Termination
PCB, discrete to V
TT
Discrete to V
TT
or ODT Discrete to V
TT
or ODT
parallel termination.
Controlled impedance
output.
Improves signaling, eases
PCB layout, reduces system
cost.
Data strobes
Single-ended
Differential or
single-ended
Differential
mandated.
Improves timing margin.
Clock, address, and
command (CAC)
layout
Balanced tree
Balanced tree
Series or daisy
chained
The DDR3 SDRAM read and
write leveling feature allows
for a much simplified PCB
and DIMM layout. You can
still optionally use the
balanced tree topology.
Note to
:
(1) The Altera DDR and DDR2 SDRAM high-performance controllers do not support additive latency.