
Background
Page 13
© November 2008
Altera Corporation
AN 436: Using DDR3 SDRAM in Stratix III and Stratix IV Devices
Clock Divider
To simplify and reduce the number of clocks required, a dedicated I/O clock divider
is provided on a per DQS group basis, which can directly source the half-rate
resynchronization clock from the full rate version.
To ease data alignment, a single I/O clock divider phase may be used for an entire
interface, as the half rate resynchronization clock can be cascaded from DQ group to
the adjacent DQ group. Hence, when using a common I/O clock divider, the high and
low bit order may be aligned across the entire interface. Individual I/O clock dividers
require the data alignment to be performed on a DQ group basis.
Balanced CAC topologies can use a single I/O clock divider, but interfaces cannot be
interleaved.
1
ALTMEMPHY-based designs use multiple I/O clock dividers on a DQ group basis.
ALTMEMPHY-based designs do not support balanced CAC topologies.
Programmable Delay
Stratix III I/O registers include programmable delay chains that you may use to
deskew interfaces. Each pin can have different delay settings, hence read and write
margins can be increased as uncertainties between signals can be minimized.
1
ALTMEMPHY-based designs do not use dynamic delay chains to deskew interfaces.
Read and Write Leveling
Stratix III I/O registers include read- and write-leveling circuitry to enable skew to be
removed or applied to the interface on a DQS group basis. There is one leveling circuit
located in each I/O subbank.
1
ALTMEMPHY-based designs for DDR3 SDRAM directly use leveling circuitry.
IOE OCT Features
Stratix III devices support dynamic calibrated OCT—previous Stratix devices did not.
This feature allows the specified series termination to be enabled during writes, and
parallel termination to be enabled during reads. In addition to series OCT, Stratix III
devices also allow slew rate control to be applied with drive strength options. These
I/O features allow you to greatly simplify PCB termination schemes.
f
For further information, refer to the
Stratix III Device I/O Features
chapter in the
Stratix III Device Handbook
and
AN 520: DDR3 SDRAM Interface Termination and Layout
DDR3 SDRAM Interface Termination and Topology
This section discusses signal topology and termination of DDR3 SDRAM interfaces.
f
For more information, refer to memory vendor application notes and