Multicore Fixed and Floating-Point System-on-Chip
Copyright 2012 Texas Instruments Incorporated
Device Operating Conditions
107
SPRS689D—March 2012
TMS320C6670
6.3 Electrical Characteristics
Table 6-3
Electrical Characteristics
Over Recommended Ranges of Supply Voltage and Operating Case Temperature (Unless Otherwise Noted)
Parameter
Test Conditions
(1)
1 For test conditions shown as MIN, MAX, or TYP, use the appropriate value specified in the recommended operating conditions table.
Min
Typ
Max
Unit
V
OH
High-level
output
voltage
LVCMOS (1.8 V)
I
O
= I
OH
DVDD18 - 0.45
V
DDR3
DVDD15 - 0.4
I
2
C
(2)
2 I
2
C uses open collector IOs and does not have a V
OH
Minimum.
V
OL
Low-level output voltage
LVCMOS (1.8 V)
I
O
= I
OL
0.45
V
DDR3
0.4
I
2
C
I
O
= 3 mA, pulled up to 1.8 V
0.4
I
I
(3)
3 I
I
applies to input-only pins and bidirectional pins. For input-only pins, I
I
indicates the input leakage current. For bidirectional pins, I
I
includes input leakage current and
off-state (Hi-Z) output leakage current.
Input current [DC]
LVCMOS (1.8 V)
No IPD/IPU
-5
5
μ
A
Internal pullup
50
100
170
Internal pulldown
-170
-100
-50
I
2
C
0.1 × DVDD18 V < V
I
< 0.9 ×
DVDD18 V
-10
10
μ
A
I
OH
High-level output current [DC]
LVCMOS (1.8 V)
-6
mA
DDR3
-8
I
2
C
(4)
4 I
2
C uses open collector IOs and does not have a IOH Maximum.
I
OL
Low-level output current [DC]
LVCMOS (1.8 V)
6
mA
DDR3
8
I
2
C
3
I
OZ
(5)
5 I
OZ
applies to output-only pins, indicating off-state (Hi-Z) output leakage current.
Off-state output current [DC]
LVCMOS (1.8 V)
-2
2
μ
A
DDR3 -2
2
I
2
C
-2
2
End of Table 6-3
Содержание TMS320C6670
Страница 225: ......