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Section 15 Electrical Characteristics
Rev. 6.00 Aug 04, 2006 page 532 of 680
REJ09B0145-0600
15.8.6
Flash Memory Characteristics
Table 15.32 Flash Memory Characteristics
Condition:
AV
CC
= 2.7 V to 5.5 V, V
SS
= AV
SS
= 0.0 V, V
CC
= 2.7 V to 5.5 V (range of
operating voltage when reading), V
CC
= 3.0 V to 5.5 V (range of operating voltage
when programming/erasing), T
a
= –20°C to +75°C (range of operating temperature
when programming/erasing: product with regular specifications, product with wide-
range temperature specifications)
Values
Item
Symbol
Min
Typ
Max
Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
—
7
200
ms/128 bytes
Erase time
*
1
*
3
*
5
t
E
—
100
1200
ms/block
Reprogramming count
N
WEC
1000
*
8
10000
*
9
—
times
Data retain period
t
DRP
10
*
10
—
—
year
Programming
Wait time after
SWE-bit setting
*
1
x
1
—
—
µs
Wait time after
PSU-bit setting
*
1
y
50
—
—
µs
z1
28
30
32
µs
1
≤
n
≤
6
z2
198
200
202
µs
7
≤
n
≤
1000
Wait time after
P-bit setting
*
1
*
4
z3
8
10
12
µs
Additional
programming
Wait time after
P-bit clear
*
1
α
5
—
—
µs
Wait time after
PSU-bit clear
*
1
β
5
—
—
µs
Wait time after
PV-bit setting
*
1
γ
4
—
—
µs
Wait time after
dummy write
*
1
ε
2
—
—
µs
Wait time after
PV-bit clear
*
1
η
2
—
—
µs
Wait time after
SWE-bit clear
*
1
θ
100
—
—
µs
Maximum
programming
count
*
1
*
4
*
5
N
—
—
1000
times
Содержание H8/38342
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Страница 240: ...Section 7 RAM Rev 6 00 Aug 04 2006 page 202 of 680 REJ09B0145 0600...
Страница 468: ...Section 12 A D Converter Rev 6 00 Aug 04 2006 page 430 of 680 REJ09B0145 0600...
Страница 580: ...Section 15 Electrical Characteristics Rev 6 00 Aug 04 2006 page 542 of 680 REJ09B0145 0600...