3. TECHNICAL BRIEF
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LGE Internal Use Only
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Only for training and service purposes
3. TECHNICAL BRIEF
[ DDR SDRAM ]
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Double Data Rate architecture
- two data transfer per clock cycle
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x16 bus width
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Supply Voltage
- VDD / VDDQ = 1.7 - 1.95 V
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Memory Cell Array
- 16Mb x 4Bank x 16 I/O
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Bidirectional data strobe (DQS)
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Input data mask signal (DQM)
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Input Clock
- Differential Clock Inputs (CK, /CK)
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MRS, EMRS
- JEDEC Standard guaranteed
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CAS Latency
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CAS Latency
- Programmable CAS latency 2 or 3 supported
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Burst Length
- Programmable burst length 2 / 4 / 8 with both sequential and interleave mode
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