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Table 6.
Summary of Features for Intel MAX 10 Devices
Feature
Description
Technology
55 nm TSMC Embedded Flash (Flash + SRAM) process technology
Packaging
• Low cost, small form factor packages—support multiple packaging
technologies and pin pitches
• Multiple device densities with compatible package footprints for seamless
migration between different device densities
• RoHS6-compliant
Core architecture
• 4-input look-up table (LUT) and single register logic element (LE)
• LEs arranged in logic array block (LAB)
• Embedded RAM and user flash memory
• Clocks and PLLs
• Embedded multiplier blocks
• General purpose I/Os
Internal memory blocks
• M9K—9 kilobits (Kb) memory blocks
• Cascadable blocks to create RAM, dual port, and FIFO functions
User flash memory (UFM)
• User accessible non-volatile storage
• High speed operating frequency
• Large memory size
• High data retention
• Multiple interface option
Embedded multiplier blocks
• One 18 × 18 or two 9 × 9 multiplier modes
• Cascadable blocks enabling creation of filters, arithmetic functions, and image
processing pipelines
ADC
• 12-bit successive approximation register (SAR) type
• Up to 16 analog inputs
• Cumulative speed up to 1 million samples per second (MSPS)
• Integrated temperature sensing capability
Clock networks
• Global clocks support
• High speed frequency in clock network
Internal oscillator
Built-in internal ring oscillator
PLLs
• Analog-based
• Low jitter
• High precision clock synthesis
• Clock delay compensation
• Zero delay buffering
• Multiple output taps
General-purpose I/Os (GPIOs)
• Multiple I/O standards support
• On-chip termination (OCT)
• Up to 830 megabits per second (Mbps) LVDS receiver, 800 Mbps LVDS
transmitter
External memory interface (EMIF)
Supports up to 600 Mbps external memory interfaces:
• DDR3, DDR3L, DDR2, LPDDR2
• SRAM (Hardware support only)
continued...
4 Development Board Components
UG-20105 | 2017.12.18
Intel
®
Cyclone
®
10 GX FPGA Development Kit User Guide
20