Silicon Laboratories SiM3L1xx, Руководство пользователя

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S i M 3 L 1 x x
Rev 1.1 31
3.3. Absolute Maximum Ratings
Table 3.18. Absolute Maximum Ratings
Parameter Symbol Test Condition Min Max Unit
Ambient Temperature Under Bias T
BIAS
–55 125 °C
Storage Temperature T
STG
–65 150 °C
Voltage on VBAT/VBATDC V
BAT
V
SS
–0.3 4.2 V
Voltage on VDC V
DC
V
SSDC
–0.3 4.2 V
Voltage on VDRV V
DRV
V
SS
–0.3 4.2 V
Voltage on VIO V
IO
V
SS
–0.3 4.2 V
Voltage on VIORF V
IORF
V
SS
–0.3 4.2 V
Voltage on VLCD V
LCD
V
SS
–0.3 4.2 V
Voltage on I/O (PB0, PB1, PB3, PB4) or
RESET
1
V
IN
V
IO
> 3.3 V V
SS
–0.3 5.8 V
V
IO
< 3.3 V V
SS
–0.3 V
IO
+2.5 V
Voltage on PB2 I/O Pins
1
V
IN
V
IORF
> 3.3 V V
SS
–0.3 5.8 V
V
IORF
< 3.3 V V
SS
–0.3 V
IORF
+2.5 V
Total Current Sunk into Supply Pins I
SUPP
VBAT/VBATDC, VIO,
VIORF, VDRV, VDC,
VLCD
— 400 mA
Total Current Sourced out of
Ground Pins
2
I
VSS
V
SS,
V
SSDC
400 — mA
Current Sourced or Sunk by any I/O Pin I
PIO
All I/O and RESET –100 100 mA
Power Dissipation at T
A
= 85 °C P
D
TQFP-80 Packages — 500 mW
QFN-64 Packages — 800 mW
TQFP-64 Packages — 650 mW
QFN-40 Packages — 650 mW
Notes:
1.
Exceeding the minimum V
IO
voltage may cause current to flow through adjacent device pins.
2.
VSS and VSSDC provide separate return current paths for device supplies, but are not isolated. They must always be
connected to the same potential on board.
Stresses above those listed under Table 3.18 may cause permanent damage to the device. This is a stress rating
only and functional operation of the devices at those or any other conditions above those indicated in the operation
listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect
device reliability.