Table
3.6.
Flash Memory
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Write Time
t
WRITE
One 16-bit Half Word
20
21
22
μ
s
Erase Time
t
ERASE
One Page
20
21
22
ms
t
ERALL
Full Device
20
21
22
ms
Endurance (Write/Erase Cycles)
N
WE
20k
100k
—
Cycles
Retention
t
RET
T
A
= 25
°C, 1k Cycles
10
100
—
Years
Notes:
1.
Does not include sequencing time before and after the write/erase operation, which may take up to 35
μ
s. During
sequential write operations, this extra time is only taken prior to the first write and after the last write.
2.
Additional Data Retention Information is published in the Quarterly Quality and Reliability Report.
S i M 3 L 1 x x
18
Rev 1.1
Содержание SiM3L1xx
Страница 2: ...2 Rev 1 1 ...
Страница 55: ...SiM3L1xx Rev 1 1 55 6 Pin Definitions 6 1 SiM3L1x7 Pin Definitions Figure 6 1 SiM3L1x7 GQ Pinout ...
Страница 62: ...SiM3L1xx 62 Rev 1 1 6 2 SiM3L1x6 Pin Definitions Figure 6 2 SiM3L1x6 GQ Pinout ...
Страница 63: ...SiM3L1xx Rev 1 1 63 Figure 6 3 SiM3L1x6 GM Pinout ...
Страница 69: ...SiM3L1xx Rev 1 1 69 6 3 SiM3L1x4 Pin Definitions Figure 6 4 SiM3L1x4 GM Pinout ...
Страница 74: ...SiM3L1xx 74 Rev 1 1 6 4 TQFP 80 Package Specifications Figure 6 5 TQFP 80 Package Drawing ...
Страница 81: ...SiM3L1xx Rev 1 1 81 6 6 TQFP 64 Package Specifications Figure 6 9 TQFP 64 Package Drawing ...
Страница 89: ...SiM3L1xx Rev 1 1 89 Figure 7 3 SiM3L1x4 GM Revision Information ...