
Section 6 ROM
Rev. 6.00 Sep 12, 2006 page 163 of 526
REJ09B0326-0600
7. Design a current margin into the programming voltage (V
PP
) power supply.
Insure that V
PP
remains within the range 12.0 V ±0.6 V (11.4 V to 12.6 V) during
programming and erasing. Programming and erasing may become impossible outside this
range.
8. Insure that peak overshoot at the FV
PP
and TEST pins does not exceed the maximum rating.
Connect bypass capacitors as close as possible to the FV
PP
and TEST pins.
In boot mode start-up, also, bypass capacitors should be connected to the TEST pin in the same
way.
0.01
µ
F
FV
PP
H8/3644F
1.0
µ
F
12 V
Figure 6.24 Example of V
PP
Power Supply Circuit Design
9. Use the recommended algorithms when programming and erasing flash memory.
The recommended algorithms enable programming and erasing to be carried out without
subjecting the device to voltage stress or sacrificing program data reliability. When setting the
program (P) or erase (E) bit in the flash memory control register (FLMCR), the watchdog
timer should be set beforehand to prevent the specified time from being exceeded.
10. For comments on interrupt handling while flash memory is being programmed or erased, see
section 6.7.9, Interrupt Handling during Flash Memory Programming/Erasing.
11. Notes on accessing flash memory control registers
a. Flash memory control register access state in each operating mode
The H8/3644F, H8/3643F, and H8/3642AF have flash memory control registers located at
addresses H'FF80 (FLMCR), H'FF82 (EBR1), and H'FF83 (EBR2). These registers can
only be accessed when 12 V is applied to the flash memory programming power supply
pin, FV
PP
.
b. To check for 12 V application/non-application in user mode
When address H'FF80 is accessed in user mode, if 12 V is being applied to FV
PP
, FLMCR
is read/written to, and its initial value after reset is H'80. When 12 V is not being applied to
FV
PP
, FLMCR is a reserved area that cannot be modified and always reads H'FF. Since bit
7 (corresponding to the V
PP
bit) is set to 1 at this time regardless of whether or not 12 V is
applied to FV
PP
, application or release of 12 V to FV
PP
cannot be determined simply from
Содержание F-ZTAT H8/3642A Series
Страница 6: ...Rev 6 00 Sep 12 2006 page iv of xx ...
Страница 8: ...Rev 6 00 Sep 12 2006 page vi of xx ...
Страница 21: ...Rev 6 00 Sep 12 2006 page xix of xx Appendix E Product Code Lineup 522 Appendix F Package Dimensions 524 ...
Страница 22: ...Rev 6 00 Sep 12 2006 page xx of xx ...
Страница 124: ...Section 5 Power Down Modes Rev 6 00 Sep 12 2006 page 102 of 526 REJ09B0326 0600 ...
Страница 188: ...Section 6 ROM Rev 6 00 Sep 12 2006 page 166 of 526 REJ09B0326 0600 ...
Страница 190: ...Section 7 RAM Rev 6 00 Sep 12 2006 page 168 of 526 REJ09B0326 0600 ...
Страница 298: ...Section 9 Timers Rev 6 00 Sep 12 2006 page 276 of 526 REJ09B0326 0600 ...
Страница 378: ...Section 12 A D Converter Rev 6 00 Sep 12 2006 page 356 of 526 REJ09B0326 0600 ...
Страница 446: ...Section 13 Electrical Characteristics Rev 6 00 Sep 12 2006 page 424 of 526 REJ09B0326 0600 ...