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Section 6 ROM
Rev. 6.00 Sep 12, 2006 page 162 of 526
REJ09B0326-0600
t
OSC1
3.0 to 5.5 V
12
±
0.6 V
12
±
0.6 V
V
CC
+ 2 V to 11.4 V
V
CC
V
V
CC
V
φ
V
CC
V
PP
(boot mode)
Period during which flash memory access
is prohibited and V
PP
flag set/clear period
V
PP
(user program
mode)
RES
0
µ
s min.
0
µ
s min.
Timing of boot
program branch
to RAM space
Min. 10
φ
cycles
(When
RES
is low)
0
µ
s min.
0 to V
CC
V
0 to V
CC
V
Figure 6.23 V
PP
Power-On and Cut-Off Timing
6. Do not apply 12 V to the FV
PP
pin during normal operation.
To prevent erroneous programming or erasing due to program runaway, etc., apply 12 V to the
FV
PP
pin only when programming or erasing flash memory. If overprogramming or
overerasing occurs due to program runaway, etc., the memory cells may not operate normally.
A system configuration in which a high level is constantly applied to the FV
PP
pin should be
avoided. Also, while a high level is applied to the FV
PP
pin, the watchdog timer should be
activated to prevent overprogramming or overerasing due to program runaway, etc.
Содержание F-ZTAT H8/3642A Series
Страница 6: ...Rev 6 00 Sep 12 2006 page iv of xx ...
Страница 8: ...Rev 6 00 Sep 12 2006 page vi of xx ...
Страница 21: ...Rev 6 00 Sep 12 2006 page xix of xx Appendix E Product Code Lineup 522 Appendix F Package Dimensions 524 ...
Страница 22: ...Rev 6 00 Sep 12 2006 page xx of xx ...
Страница 124: ...Section 5 Power Down Modes Rev 6 00 Sep 12 2006 page 102 of 526 REJ09B0326 0600 ...
Страница 188: ...Section 6 ROM Rev 6 00 Sep 12 2006 page 166 of 526 REJ09B0326 0600 ...
Страница 190: ...Section 7 RAM Rev 6 00 Sep 12 2006 page 168 of 526 REJ09B0326 0600 ...
Страница 298: ...Section 9 Timers Rev 6 00 Sep 12 2006 page 276 of 526 REJ09B0326 0600 ...
Страница 378: ...Section 12 A D Converter Rev 6 00 Sep 12 2006 page 356 of 526 REJ09B0326 0600 ...
Страница 446: ...Section 13 Electrical Characteristics Rev 6 00 Sep 12 2006 page 424 of 526 REJ09B0326 0600 ...