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Section 6 ROM
Rev. 6.00 Sep 12, 2006 page 153 of 526
REJ09B0326-0600
High-Speed, High-Reliability Programming:
Unused areas of the flash memory in the
H8/3644F, H8/3643F, or H8/3642AF contain H'FF data (initial value). The flash memory uses a
high-speed, high-reliability programming procedure. This procedure provides higher programming
speed without subjecting the device to voltage stress and without sacrificing the reliability of the
programmed data.
Figure 6.18 shows the basic high-speed, high-reliability programming flowchart. Tables 6.15 and
6.16 list the electrical characteristics during programming.
Start
End
Error
Set V
PP
= 12.0 V ±0.6 V
Address = 0
n = 0
n + 1
→
n
Program setup command
NG
No
No
Yes
OK
Yes
Program command
Wait (25
µ
s)
Program-verify command
Wait (6
µ
s)
A 1
→
address
Set V
PP
= V
CC
Verify?
n = 20?
Last address?
Figure 6.18 High-Speed, High-Reliability Programming
Содержание F-ZTAT H8/3642A Series
Страница 6: ...Rev 6 00 Sep 12 2006 page iv of xx ...
Страница 8: ...Rev 6 00 Sep 12 2006 page vi of xx ...
Страница 21: ...Rev 6 00 Sep 12 2006 page xix of xx Appendix E Product Code Lineup 522 Appendix F Package Dimensions 524 ...
Страница 22: ...Rev 6 00 Sep 12 2006 page xx of xx ...
Страница 124: ...Section 5 Power Down Modes Rev 6 00 Sep 12 2006 page 102 of 526 REJ09B0326 0600 ...
Страница 188: ...Section 6 ROM Rev 6 00 Sep 12 2006 page 166 of 526 REJ09B0326 0600 ...
Страница 190: ...Section 7 RAM Rev 6 00 Sep 12 2006 page 168 of 526 REJ09B0326 0600 ...
Страница 298: ...Section 9 Timers Rev 6 00 Sep 12 2006 page 276 of 526 REJ09B0326 0600 ...
Страница 378: ...Section 12 A D Converter Rev 6 00 Sep 12 2006 page 356 of 526 REJ09B0326 0600 ...
Страница 446: ...Section 13 Electrical Characteristics Rev 6 00 Sep 12 2006 page 424 of 526 REJ09B0326 0600 ...