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Section 6 ROM
Rev. 6.00 Sep 12, 2006 page 126 of 526
REJ09B0326-0600
User Program Mode Execution Procedure
*
1
:
The procedure for user program execution in
RAM is shown below.
Reset-start (TEST = V
SS
)
Branch to flash memory on-board
reprogramming program
Transfer flash memory
reprogramming routine to RAM
Branch to flash memory
reprogramming routine in RAM area
FV
PP
= 12 V
(user program mode)
Execute flash memory
reprogramming routine in RAM area
(flash memory reprogramming)
Release FV
PP
(exit user program mode)
Branch to flash memory application
program
*
2
1
2
3
4
5
6
7
8
Procedure:
An on-board reprogramming program must be written into
flash memory by the user beforehand.
1. Set the TEST pin to V
SS
and execute a reset-start.
2. Branch to the on-board reprogramming program written to
flash memory.
3. Transfer the flash memory reprogramming routine to the
RAM area.
4. Branch to the flash memory reprogramming routine
transferred to the RAM area.
5. Apply 12 V to the FV
PP
pin. (Transition to user program
mode)
6. Execute the flash memory reprogramming routine in the
RAM area, an perform on-board reprogramming of the
flash memory.
7. Switch the FV
PP
pin from 12 V to V
CC
, and exit user
program mode.
8. After on-board reprogramming of the flash memory ends,
branch to the flash memory application program.
Notes: 1. Do not apply 12 V to the FV
PP
pin during normal operation. To prevent inadvertent programming or
erasing due to program runaway, etc., apply 12 V to the FV
PP
pin only when the flash memory is
being programmed or erased . Memory cells may not operate normally if overprogrammed or
overerased due to program runaway, etc. Also, while 12 V is applied to the FV
PP
pin, the watchdog
timer should be activated to prevent overprogramming or overerasing due to program runaway, etc.
For further information on FV
PP
application, release, and cut-off, see note 5 in section 6.9, Flash
Memory Programming and Erasing Precautions.
2. When the application of 12 V to the FV
PP
pin is released after programming is completed, the flash
memory read setup time (t
FRS
) must elapse before executing a program in flash memory. This
specifies the setup time from the point at which the FV
PP
voltage reaches the V
CC
+ 2 V level after
12 V application is released until the flash memory is read.
Figure 6.12 Example of User Program Mode Operation
Содержание F-ZTAT H8/3642A Series
Страница 6: ...Rev 6 00 Sep 12 2006 page iv of xx ...
Страница 8: ...Rev 6 00 Sep 12 2006 page vi of xx ...
Страница 21: ...Rev 6 00 Sep 12 2006 page xix of xx Appendix E Product Code Lineup 522 Appendix F Package Dimensions 524 ...
Страница 22: ...Rev 6 00 Sep 12 2006 page xx of xx ...
Страница 124: ...Section 5 Power Down Modes Rev 6 00 Sep 12 2006 page 102 of 526 REJ09B0326 0600 ...
Страница 188: ...Section 6 ROM Rev 6 00 Sep 12 2006 page 166 of 526 REJ09B0326 0600 ...
Страница 190: ...Section 7 RAM Rev 6 00 Sep 12 2006 page 168 of 526 REJ09B0326 0600 ...
Страница 298: ...Section 9 Timers Rev 6 00 Sep 12 2006 page 276 of 526 REJ09B0326 0600 ...
Страница 378: ...Section 12 A D Converter Rev 6 00 Sep 12 2006 page 356 of 526 REJ09B0326 0600 ...
Страница 446: ...Section 13 Electrical Characteristics Rev 6 00 Sep 12 2006 page 424 of 526 REJ09B0326 0600 ...