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User’s Manual U11969EJ3V0UM00
383
CHAPTER 14 FLASH MEMORY (
µ
PD70F3008 AND 70F3008Y ONLY)
The
µ
PD70F3008 and 70F3008Y of the V854 are provided with a 128-Kbyte flash memory. In the instruction fetch
to this flash memory, 4 bytes can be accessed by a single clock as well as the mask ROM version.
Writing to a flash memory can be performed with memory mounted on the target system (on board). The dedicated
flash writer is connected to the target system to perform writing.
The followings can be considered as the development environment and the applications using a flash memory.
Software can be altered after the V854 is solder mounted on the target system.
Small scale production of various models is made easier by differentiating software.
Data adjustment in starting mass production is made easier.
14.1 Features
• 4-byte/1-clock access (in instruction fetch access)
• All area one-shot erase
• Communication through serial interface from the dedicated flash writer
• Erase/writing voltage: V
PP
= 7.8 V
• On-board programming
• Number of rewrite: 100 times (target)
14.2 Writing by Flash Writer
Writing can be performed either on-board or off-board by the dedicated flash writer.
(1) On-board programming
The contents of the flash memory is rewritten after the V854 is mounted on the target system. Mount
connectors, etc., on the target system to connect the dedicated flash writer.
(2) Off-board programming
Writing to a flash memory is performed by the dedicated program adapter (FA Series
Note
), etc., before
mounting the V854 on the target system.
Note
FA Series program adapters are made by Naito Densei Machidaseisakusho Co., Ltd.
Содержание V854 UPD703006
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