CHAPTER 29 ELECTRICAL SPECIFICATIONS
User’s Manual U16899EJ2V0UD
488
Flash Memory Programming Characteristics
(T
A
=
−
10 to +65
°
C, 2.7 V
≤
V
DD
≤
5.5 V, 2.7 V
≤
AV
REF
≤
V
DD
, V
SS
= 0 V)
Basic characteristics
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
DD
supply current
I
DD
f
XP
= 16 MHz, V
DD
= 5.5 V
32
mA
Unit erase time
Note 1
T
erass
10 ms
All blocks
T
eraca
0.01 2.55
s
Erase time
Note 2
Block unit
T
erasa
0.01 2.55
s
Write time
T
wrwa
50 500
µ
s
Number of rewrites per chip
Note 3
C
erwr
1 erase + 1 write after erase = 1 rewrite
Note 4
100
Times
Notes 1. Time required for one erasure execution
2. The total time for repetition of the unit erase time (255 times max.) until the data is erased completely.
Note that the prewrite time and the erase verify time (writeback time) before data erasure are not
included.
3.
Number of rewrites per block
4. If a block erasure is executed after word units of data are written 512 times to a block (2 KB), it is
considered as one rewrite. Overwriting the same address without erasing the data in it is prohibited.
Содержание MuPD78F0132H
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