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Series Application note

Publication Date: September 2016

8

2.1.2 Thermal Resistance

Table 2-1-2 shows the thermal resistance between its chip junction and case.

Table 2-1-2. Thermal resistance of PSS25MC1FT (25A/1200V, CIB type)

Symbol

Parameter

Condition

Limits

Unit

Min.

Typ.

Max.

R

th(j-c)Q

Junction to case thermal
resistance

(Note 3)

Inverter IGBT part (per 1/6 module)

-

-

1.15

K/W

R

th(j-c)F

Inverter FWD part (per 1/6 module)

-

-

1.65

R

th(j-c)Q

Brake IGBT part (per 1module)

-

-

1.45

R

th(j-c)F

Brake Di part (per 1module)

-

-

1.65

R

th(j-c)R

Converter part (per 1/6module)

-

-

1.10

Note 3: Grease with good thermal conductivity and long-term endurance should be applied evenly with about

+100μm~

+200μm on the contacting surface of DIPIPM and heat sink. The contacting thermal resistance between DIPIPM
case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease.
For reference, Rth(c-f) is about 0.25K/W (per 1chip

, grease thickness: 20μm, thermal conductivity: 1.0W/m•K).

The above data shows static state thermal resistance. The thermal resistance goes into saturation in about 10
seconds. The unsaturated  thermal resistance is called as transient thermal impedance which is shown in
Fig.2-1-2. Zth(j-c)* is the  normalized transient thermal impedance  and formulation is described as Zth(j-c)*=
Zth(j-c) / Rth(j-c)max.  For example, the IGBT transient thermal impedance at  0.2s is 1.15×0.7=0.81K/W.  The
transient thermal impedance isn’t used for constantly current, but for short period current as millisecond order.
(e.g. motor starting, motor lock

･･･

e.t.c)

0.01

0.10

1.00

0.001

0.01

0.1

1

N

or

m

al

iz

ed

tr

ans

ient

ther

m

al

i

m

pedanc

e

Z

th(

j-

c

)*

Time (s)

Fig. 2-1-2. Normalized transient thermal impedance

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Содержание PSSxxMC1Fx

Страница 1: ...guidance 29 3 1 1 System connection 29 3 1 2 Interface Circuit Direct Coupling Interface example for using one shunt resistor 30 3 1 3 Interface circuit example of opto coupler isolated interface 32 3 1 4 External SC protection circuit with using three shunt resistors 33 3 1 5 Circuits of Signal Input Terminals and Fo Terminal 33 3 1 6 Snubber circuit 35 3 1 7 Recommended wiring method around shun...

Страница 2: ... circuit shorter designing time and more reasonable assembly cost It employs low voltage LV and high voltage HV control ICs and their corresponding bootstrap circuit for IGBT driving and protection as same as general DIPIPM series So DIPIPM series enable same system design for its inverter part like general DIPIPM series By adopting same structure of heat radiation as Large DIPIPM series which has...

Страница 3: ...mperature protection note about SC protection By detecting voltage of external shunt resistor DIPIPM works to protect Fault signal output Corresponding to N side IGBT SC protection and N side UV protection Brake block For IGBT Drive circuit UV protection circuit without fault signal Common items IGBT drive supply Single DC15V power supply Control input supply High active logic with 5V UL recognize...

Страница 4: ...3 7kW 220VAC Table 1 1 DIPIPM without Brake circuit Type name Rated current Rated voltage Motor ratings note1 Brake Isolation voltage PSS05NC1FT 5A 1200V 0 75kW 440VAC No 2500Vrms note2 PSS10NC1FT 10A 1 5kW 440VAC PSS15NC1FT 15A 2 2kW 440VAC PSS25NC1FT 25A 3 7kW 440VAC PSS35NC1FT 35A 5 5kW 440VAC PSS50NC1F6 50A 600V 3 7kW 220VAC note 1 The motor ratings are described for industrial and general mot...

Страница 5: ...e surge Applied between P N B 1000 V VCES Collector emitter voltage 1200 V IC Each IGBT collector current TC 25 C Note 1 15 A ICP Each IGBT collector current peak TC 25 C less than 1ms 30 A VRRM Repetitive peak reverse voltage 1200 V IF Forward current TC 25 C 15 A IFP Forward current peak 30 A Tj Junction temperature 30 150 C CONVERTER PART Symbol Parameter Condition Ratings Unit VRRM Repetitive ...

Страница 6: ...width and period are limited due to junction temperature 5 Tj The maximum junction temperature rating is 150 C But for safe operation it is recommended to limit the average junction temperature up to 125 C at Tc is less than 100 Repetitive temperature variation ΔTj affects the life time of power cycle so please refer life time curves for safety design 6 VCC PROT The maximum supply voltage for turn...

Страница 7: ... 2 1 1 indicates the position of the each power chips This figure is the view from laser marked side In case of PSSxxNC1Fx Br IGBT and Br Di are not built in Fig 2 1 1 Power chips layout Unit mm INV IGBT x 6 INV Di x 6 Br UP VP WP UN VN WN Br Di CONV Di x 3 CONV Di x 3 RP SP TP RN SN TN Tc position Br IGBT Reference point of location ...

Страница 8: ... sink The contacting thermal resistance between DIPIPM case and heat sink Rth c f is determined by the thickness and the thermal conductivity of the applied grease For reference Rth c f is about 0 25K W per 1chip grease thickness 20μm thermal conductivity 1 0W m K The above data shows static state thermal resistance The thermal resistance goes into saturation in about 10 seconds The unsaturated th...

Страница 9: ...witching times VCC 600V VD VDB 15V IC 25A Tj 125 C VIN 0 5V Inductive Load upper lower arm 1 10 1 90 2 60 μs tC on 0 60 0 90 μs toff 2 80 3 80 μs tC off 0 50 0 90 μs trr 0 60 μs ICES Collector emitter cut off current VCE VCES Tj 25 C 1 mA Tj 125 C 10 BRAKE PART Symbol Parameter Condition Limits Unit Min Typ Max VCE sat Collector emitter saturation voltage VD VDB 15V VIN 5V IC 15A Tj 25 C 1 50 2 20...

Страница 10: ...TURN OFF TURN ON Fig 2 1 5 Typical switching waveform for PSS25MC1FT 25A 1200V inverter part Condition VCC 600V VD VDB 15V Ic 25A Tj 125 C inductive load half bridge circuit trr Irr tc on 10 10 10 10 90 90 td on tc off td off tf tr ton td on tr toff td off tf Ic VCE VCIN P side SW Input signal N side SW Input signal VIN 5V 0V VD VCC IN GND CIN LO VCC IN VB VS HO UP VP WP UN VN WN VNC VUFB VVFB VWF...

Страница 11: ...O terminal pulled up to 5V by 10kΩ 4 9 V VFOL VSC 1V IFO 1mA 0 95 V tFO Fault output pulse width In case of CFo 22nF Note 6 7 1 6 2 4 ms IIN Input current VIN 5V 0 70 1 00 1 50 mA Vth on ON threshold voltage Applied between UP VP WP UN VN WN AIN VNC 3 5 V Vth off OFF threshold voltage 0 8 VF Bootstrap Di forward voltage IF 10mA including voltage drop by limiting resistor 0 9 1 3 V R Built in limit...

Страница 12: ...ote 8 1 5 μs PWIN off 0 VCC 800V 13 5 VD 16 5V 13 0 VDB 18 5V 20 TC 100 C N line wiring inductance less than 10nH Note 9 Less than rated current 3 0 From rated current to 1 7 times of rated current 3 5 VNC VNC variation Between VNC NU NV NW including surge 5 0 5 0 V Tj Junction temperature 20 125 C Note 8 DIPIPM might not make response if the input signal pulse width is less than PWIN on 9 DIPIPM ...

Страница 13: ...ECHANICAL CHARACTERISTICS AND RATINGS Parameter Condition Limits Unit Min Typ Max Mounting torque Mounting screw M4 Note 10 Recommended 1 18N m 0 98 1 18 1 47 N m Terminal pulling strength 20N load JEITA ED 4701 10 s Terminal bending strength 90deg bending with 10N load JEITA ED 4701 2 times Weight 40 g Heat radiation part flatness Note 11 50 100 μm Note 10 Plain washers ISO 7089 7094 are recommen...

Страница 14: ...the pattern wiring around the shunt resistor as short as possible Fig 2 2 1 SC protection circuit Fig 2 2 2 Filtering time constant setting 2 SC protection sequence for only low side with external shunt resistor and RC filter a1 Normal operation IGBT ON and outputs current a2 Short circuit current detection SC trigger It is recommended to set RC time constant 1 5 2 0μs so that IGBT shut down withi...

Страница 15: ...e both of SC trip level and shunt resistor will be maximum typical and minimum these will be described as follows SC max 42 5 A setting SC typ 0 480 12 5 38 4 A SC min 0 455 13 1 34 7 A From the above the SC trip level range is described as Table 2 2 2 Table 2 2 2 Operative SC Range Condition min typ max Unit Tｊ 25 C VD 15V 34 7 38 4 42 5 A There is the possibility that the actual SC protection le...

Страница 16: ...ormal operating of each protection function UV Fo output etc is not also assured Normally IGBT does not work But external noise may cause DIPIPM malfunction turns ON so DC link voltage need to start up after control supply starts up 4 0 UVDt N UVDBt P UV function becomes active and output Fo N side only Even if control signals are applied IGBT does not work UVDt N 13 5V UVDBt P 13 0V IGBT can work...

Страница 17: ...t Fig 2 2 4 Timing Chart of N side UV protection 2 P side UV Protection Sequence a1 Control supply voltage VDB rises After the voltage reaches under voltage reset level UVDBr IGBT turns on by next ON signal L H a2 Normal operation IGBT ON and outputs current a3 VDB level drops to under voltage trip level UVDBt a4 IGBT of the corresponding phase only turns OFF in spite of control input signal level...

Страница 18: ...l operation IGBT ON and collector current a3 VD level drops to under voltage trip level UVDt a4 IGBT of the corresponding phase only turns OFF in spite of control input signal level but there is no FO signal output a5 VD level reaches UVDr a6 Normal operation IGBT ON and outputs current Fig 2 2 6 Timing Chart of brake circuit UV protection Control input Protection circuit state Control supply volt...

Страница 19: ... in Fig 2 2 9 is the output of OP amplifier circuit The current capability of VOT output is described as Table 2 2 5 The characteristics of VOT output vs LVIC temperature is linear characteristics described in Fig 2 2 11 There are some cautions for using this function as follows Table 2 2 5 Output capability Tc 20 C 100 C min Source 1 7mA Sink 0 1mA Source Current flow from VOT to outside Sink Cur...

Страница 20: ... 4 2 6 2 8 3 3 2 3 4 3 6 3 8 4 30 20 10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 VOT output V LVIC temperature degC 3 14 3 02 2 89 Max Min Typ Fig 2 2 11 VOT output vs LVIC temperature Output range without 5 1kΩ pull down resistor Output might saturated under this level Output range with 5 1kΩ pull down resistor Output might saturated under this level ...

Страница 21: ...telligent Power Module DIPIPM Series Application note Publication Date September 2016 21 2 3 Package outline of DIPIPM 2 3 1 Package outline Fig 2 3 1 Package outline drawing Dimension in mm with brake type without brake type ...

Страница 22: ...f origin Type name Lot number and 2D code are marked on the surface of module Fig 2 3 2 Laser marking view PSSxxxC1Fx Dimension in mm The Lot number indicates production year month running number and country of origin The detailed is described as below Example 6 9 AA1 Running number Product month however O October N November D December Last figure of Product year e g This case describes the year 2...

Страница 23: ...minal 9 VVFB V phase P side drive supply positive terminal 10 VVFS V phase P side drive supply GND terminal 11 VWFB W phase P side drive supply positive terminal 12 VWFS W phase P side drive supply GND terminal 13 UP U phase P side control input terminal 14 VP V phase P side control input terminal 15 WP W phase P side control input terminal 16 VP1 2 Control supply positive terminal 17 UN U phase N...

Страница 24: ...put terminals This is Voltage input type These terminals are internally connected to Schmitt trigger circuit and pulled down by min 3 3kΩ resistor internally The wiring of each input should be as short as possible to protect the DIPIPM from noise interference Please use RC coupling in case of signal oscillation Pay attention to threshold voltage of input terminal because input circuit has pull dow...

Страница 25: ... AC motor Each terminal is internally connected to the intermidiate point of the corresponding IGBT half bridge arm AC power supply input terminal R S T AC power supply input terminal Converter positive output terminal P1 Converter positive output terminal Converter GND terminal N1 Converter GND terminal note Use oscilloscope to check voltage waveform of each power supply terminals and P and N ter...

Страница 26: ...will lead to a broken or degradation of the chips or insulation structure The recommended fastening procedure is shown in Fig 2 4 1 When fastening it is necessary to use the torque wrench and fasten up to the specified torque And pay attention not to have any foreign particle on the contact surface between the module and the heat sink Even if the fixing of heatsink was done by proper procedure and...

Страница 27: ...e installation surface the surface finishing treatment should be within Rz12 Evenly apply thermally conductive grease with 100μ 200μm thickness over the contact surface between a module and a heat sink which is also useful for preventing corrosion Furthermore the grease should be with stable quality and long term endurance within wide operating temperature range The contacting thermal resistance b...

Страница 28: ...m whether it is appropriate or not for your real PCB finally Table 2 4 3 Reliability test specification Item Condition Soldering thermostability 260 5 C 10 1s 2 Hand soldering Since the temperature impressed upon the DIPIPM may changes based on the soldering iron types wattages shape of soldering tip etc and the land pattern on PCB the unambiguous hand soldering condition cannot be decided As a ge...

Страница 29: ... Film capacitor for snubber D1 Zener diode 24V 1W for surge absorber Z Surge absorber C AC filter ceramic capacitor 2 2n 6 5nF Common mode noise filter Drive circuit UV lockout circuit Level shift Input signal conditioning Drive circuit Level shift Input signal conditioning Drive circuit Level shift Input signal conditioning Drive circuit UV lockout circuit Fo Logic Input signal conditioning P sid...

Страница 30: ...ng might generate noise to input signal and cause IGBT malfunction M MCU C2 15V VD C4 R1 Shunt resistor N1 C 5V C1 D D1 C3 R2 5 1kΩ C2 C1 D1 C2 C5 R3 C5 R3 Brake Resistor Prevention circuit for inrush current P 32 U 31 V 30 W 29 NW 26 LVIC NV 27 NU 28 HVIC S 35 T 34 B 33 LVIC Power GND patterning Control GND patterning C5 R3 C5 R3 C5 R3 C5 R3 C5 R3 A B UN 17 VN 18 WN 19 Fo 20 VVFB 9 VP 14 VWFB 11 ...

Страница 31: ...nsated type is recommended for shunt resistor 7 All capacitors should be mounted as close to the terminals as possible C1 good temperature frequency characteristic electrolytic type and C2 0 01μ 2μF good temperature frequency and DC bias characteristic ceramic type are recommended 8 Input logic is High active There is a 3 3kΩ min pull down resistor in the input circuit of IC To prevent malfunction...

Страница 32: ...et turn on and turn off threshold voltage 4 About comparator circuit at VOT output it is recommended to design the input circuit with hysteresis because of preventing output chattering Long GND wiring might generate noise to input signal and cause IGBT malfunction M C2 15V VD C4 R1 Shunt resistor N1 C C1 D D1 C3 5 1kΩ C2 C1 D1 C2 C5 R3 C5 R3 Brake Resistor Prevention circuit for inrush current P 3...

Страница 33: ...inal 1 Internal Circuit of Control Input Terminals DIPIPM is high active input logic 3 3kΩ min pull down resistor is built in each input circuits of the DIPIPM as shown in Fig 3 1 5 so external pull down resistor is not needed Furthermore the turn on and turn off threshold voltage of input signal are as shown in Table 3 1 1 Fig 3 1 5 Internal structure of control input terminals Table 3 1 1 Input ...

Страница 34: ...le minimum input pulse width PWIN on Up to 1 7 times of rated current 1 5 μs PWIN off 0 VCC 800V for 1200V series or 0 VCC 350V for 600V series 13 5 VD 16 5V 13 0 VDB 18 5V 20 C Tc 100 C N line wiring inductance less than 10nH Up to rated current 3 From rated current to 1 7 times of rated current 3 5 note 1 Input signal with ON pulse width less than PWIN on might make no response 2 IPM might make ...

Страница 35: ...ffer circuit for increasing driving current Table 3 1 3 shows the typical V I characteristics of Fo terminal Item Symbol Condition Min Typ Max Unit Fault output voltage VFOH VSC 0V Fo 10kΩ 5V Pulled up 4 9 V VFOL VSC 1V IFO 1mA 0 95 V 0 0 0 5 1 0 1 5 2 0 2 5 3 0 0 1 2 3 4 5 V FO V IFO mA Fig 3 1 8 Fo terminal typical V I characteristics VD 15V Tj 25 C 3 1 6 Snubber circuit In order to prevent DIPI...

Страница 36: ...r Fig 3 1 10 Wiring instruction In the case of using with one shunt resistor Fig 3 1 11 Wiring instruction In the case of using with three shunt resistors Connect GND wiring from VNC terminal to the shunt resistor terminal as close as possible Shunt resistors It is recommended to make the inductance of each phase including the shunt resistor less than 10nH e g Inductance of copper pattern width 3m...

Страница 37: ...rminals If part B wiring is too long extra surge voltage generated by the wiring inductance will lead to deterioration of SC protection level It is necessary to connect CIN and VNC terminals directly to the two ends of shunt resistor and avoid long wiring 3 Influence of the part C wiring pattern C1R2 filter is added to remove noise influence occurring on shunt resistor Filter effect will dropdown ...

Страница 38: ... or 600V as withstanding voltage VCC surge is specified to maximum 1000V or 500V subtracted 200V or less or 100V or less of surge voltage by internal wiring inductance of DIPIPM from VCES Furthermore also VCC is specified to maximum 900V or 450V because it should be considered about surge voltage by wiring inductance between DIPIPM terminals and DC link capacitor then the maximum Vcc is subtracted...

Страница 39: ...f PSS10M N C1FT Fig 3 1 16 Typical SCSOA curve of PSS15M N C1FT Fig 3 1 17 Typical SCSOA curve of PSS25M N C1FT Fig 3 1 18 Typical SCSOA curve of PSS35M N C1FT Fig 3 1 19 Typical SCSOA curve of PSS50M N C1F6 0 20 40 60 80 100 120 0 1 2 3 4 5 6 7 Ic Apeak Inputpulse width μs VD 15V VD 18 5V VD 16 5V 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 Ic Apeak Inputpulse width μs VD 15V VD 18 5V VD 16 5V ...

Страница 40: ...tion affect the device lifetime Fig 3 1 20 shows the IGBT power cycle curve as a function of average junction temperature variation ΔTj The curve is a regression curve based on 3 points of ΔTj 46 88 98K with regarding to failure rate of 0 1 1 and 10 These data are obtained from the reliability test of intermittent conducting operation Fig 3 1 20 Power cycle curve 1000 10000 100000 1000000 10000000...

Страница 41: ...s with Icp sinx and it does not include ripple 5 Power factor of load output current is cosθ ideal inductive load is used for switching Expressions Derivation PWM signal duty is a function of phase angle x as 2 x sin D 1 which is equivalent to the output voltage variation From the power factor cosθ the output current and its corresponding PWM duty at any phase angle x can be obtained as below 2 si...

Страница 42: ... sin sin 8 1 4 sin sin 2 1 2 2 π ρ π π Attention of applying the power loss simulation for inverter designs Divide the output current period into fine steps and calculate the losses at each step based on the actual values of PWM duty output current VCE sat VEC and Psw corresponding to the output current The worst condition is most important PWM duty depends on the signal generating way The relatio...

Страница 43: ...cy and allowable maximum operating temperature condition Tc 100 C Tj 125 C The results may change for different control strategy and motor types Anyway please ensure that there is no large current over device rating flowing continuously 0 5 10 15 20 25 30 0 5 10 15 20 Allowable current Arms Career Frequency kHz PSS05xC1FT PSS10xC1FT PSS15xC1FT PSS25xC1FT PSS35xC1FT 0 5 10 15 20 25 30 35 40 0 5 10 ...

Страница 44: ...ries Application note Publication Date September 2016 44 The inverter loss can be calculated by the free power loss simulation software which is uploaded on the web site URL http www MitsubishiElectric com semiconductors Fig 3 2 4 Loss simulator screen image ...

Страница 45: ...and other factors it is recommended to conduct enough evaluation using prototype product Condition 1 For 1200V series VCC 600V VD 15V Ta 25 C no load 2 For 600V series VCC 300V VD 15V Ta 25 C no load Scheme of applying noise From AC line R S T Period T 16ms Pulse width tw 0 05 1μs input in random Fig 3 3 1 Noise withstand capability evaluation circuit note C1 AC line common mode filter 4700pF PWM ...

Страница 46: ...untermeasures are recommended Fig 3 3 2 Example of countermeasures for inverter part Increase the capacitance of C2 and locate it as close to the terminal as possible M MCU C2 15V VD C4 R1 Shunt resistor 5V C1 D1 C3 R2 5 1kΩ C2 C1 D1 C2 C5 R3 C5 R3 Brake Resistor P 32 U 31 V 30 W 29 NW 26 LVIC NV 27 NU 28 HVIC S 35 T 34 B 33 LVIC C5 R3 C5 R3 C5 R3 C5 R3 C5 R3 UN 17 VN 18 WN 19 Fo 20 VVFB 9 VP 14 V...

Страница 47: ... Evaluated terminals Polarity Polarity Unit VUFB VUFS VVFB VVFS VWFB VWFS 2 7 2 7 kV UP VP WP VNC 0 7 0 9 VP1 VNC PC 3 0 3 5 UN VN WN VNC 0 8 0 8 VN1 VNC 4 0 or more 4 0 or more Fo VNC 0 8 1 2 CIN VNC 0 8 1 0 VOT VNC 0 9 1 4 CFo VNC 1 1 1 2 Power part for Inverter Evaluated terminals Polarity Polarity Unit P NU NV NW 4 0 or more 4 0 or more kV U NU V NV W NW 4 0 or more 4 0 or more Power part for ...

Страница 48: ...C via current limiting resistor and BSD when voltage of output terminal U V or W goes down to GND potential in inverter operation The BSC cannot be charged enough depending on its switching condition BSC capacitance and so on Deficient charge leads to too low voltage of BSC and might work under voltage protection UV This situation makes the loss of P side IGBT increase by low gate voltage or stop ...

Страница 49: ...pical IDB vs carrier frequency fc characteristics for DIPIPM series Condition 1 For 1200V series VCC 800V VD VDB 15V Tj 125 C Duty 50 2 For 600V series Vcc 400V VD VDB 15V Tj 125 C Duty 50 0 00 0 20 0 40 0 60 0 80 1 00 1 20 0 5 10 15 20 Circult current mA Carrier frequency kHz Fig 4 2 1 IDB vs Carrier frequency for PSS05M N C1FT 0 00 0 20 0 40 0 60 0 80 1 00 1 20 1 40 0 5 10 15 20 Circult current ...

Страница 50: ...t mA Carrier frequency kHz Fig 4 2 4 IDB vs Carrier frequency for PSS25M N C1FT 0 00 0 50 1 00 1 50 2 00 2 50 3 00 3 50 0 5 10 15 20 Circultcurrent mA Carrier frequency kHz Fig 4 2 5 IDB vs Carrier frequency for PSS35M N C1FT 0 00 0 50 1 00 1 50 2 00 2 50 3 00 3 50 4 00 0 5 10 15 20 Circultcurrent mA Carrier frequency kHz Fig 4 2 6 IDB vs Carrier frequency for PSS50M N C1F6 ...

Страница 51: ...uminum solid type Low temp 5 High temp 10 Different due to temp characteristics rank Low temp 5 0 High temp 5 10 in the case of B X5R X7R ranks DC bias characteristics Applying DC15V Nothing within rating voltage Different due to temp characteristics rating voltage package size and so on 70 15 DC bias characteristic of electrolytic capacitor is no problem however it is necessary to note its ripple...

Страница 52: ...But its charging efficiency might become lower due to some cause e g wiring resistance of motor There are mainly two procedures for BSC charging One is performed by one long pulse and another is conducted by multiple short pulses Multi pulse method is used when there are some restriction like control supply capability and etc Fig 4 4 1 Initial charging root Fig 4 4 2 Example of waveform by one cha...

Страница 53: ...of the box additional buffer materials are also inserted Fig 5 1 Packaging Specification 55 19 520 8stages Plastic tube DIPIPM Quantity 5 pieces 1 tube Total amount in one box max Tube Quantity 4 8 32pcs IPM Quantity max 5 32 160pices Mass About 40g DIPIPM About 300g tube About 11kg box 4columns When it isn t fully filled by tubes at top stage cardboard spacers or empty tubes are inserted for fill...

Страница 54: ...94 V0 but they are not noninflammable Static electricity ICs and power chips with MOS gate structure are used for the DIPIPM power modules Please keep the following notices to prevent modules from being damaged by static electricity 1 Precautions against the device destruction caused by the ESD The ESD of human bodies and packaging and or excessive voltage applied across the gate to emitter may da...

Страница 55: ...le DIPIPM Series Application note Publication Date September 2016 55 Revision Record Rev Date Points 01 09 2016 New 2016 MITSUBISHI ELECTRIC CORPORATION ALL RIGHTS RESERVED DIPIPM DIPIPM and CSTBT are trademarks of MITSUBISHI ELECTRIC CORPORATION ...

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