<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
8
2.1.3 Electric Characteristics and Recommended Conditions
Table 2-1-3 shows the typical static characteristics and switching characteristics of PSS10S72FT.
Table 2-1-3 Static characteristics and switching characteristics of PSS10S72FT.
INVERTER PART
(T
j
= 25°C, unless otherwise noted)
Symbol
Parameter
Condition
Limits
Unit
Min. Typ. Max.
V
CE(sat)
Collector-emitter saturation
voltage
V
D
=V
DB
= 15V, V
IN
= 5V, I
C
= 10A
T
j
= 25°C
-
1.50
2.20
V
T
j
= 125°C
-
1.75
2.50
V
EC
FWDi forward voltage
V
IN
= 0V, -I
C
= 10A
-
1.90
2.40
V
t
on
Switching times
V
CC
= 600V, V
D
= V
DB
= 15V
I
C
= 10A, T
j
= 125°C, V
IN
= 0
↔
5V
Inductive Load (upper-lower arm)
1.10 1.80 2.50
μ
s
t
C(on)
- 0.45
0.90
μ
s
t
off
- 2.40
3.40
μ
s
t
C(off)
- 0.40
0.80
μ
s
t
rr
- 0.50 -
μ
s
I
CES
Collector-emitter cut-off
current
V
CE
=V
CES
T
j
= 25°C
-
-
1
mA
T
j
= 125°C
-
-
10
Switching time definition and performance test method are shown in Fig.2-1-4 and 2-1-5.
Switching characteristics are measured by half bridge circuit with inductance load.
Fig.2-1-4 Switching time definition Fig.2-1-5 Evaluation circuit (inductive load)
Short A for N-side IGBT, and short B for P-side IGBT evaluation
PSS10S72FT (10A/1200V)
Fig.2-1-6 Typical switching waveform
Conditions: V
CC
=600V, V
D
=V
DB
=15V, Tj=125°C, Ic=10A, Inductive load half-bridge circuit
trr
Irr
tc(on)
10% 10%
10% 10%
90%
90%
td(on)
tc(off)
td(off) tf
tr
( ton=td(on)+tr )
( toff=td(off)+tf )
Ic
V
CE
V
CIN
P-side SW
Input signal
N-side SW
Input signal
V
IN
(5V
0V)
V
D
V
CC
IN
GND
CIN
LO
V
CC
IN
V
B
V
S
HO
U
P
,V
P
,W
P
U
N
,V
N
,W
N
V
NC
V
UFB
,V
VFB
,V
WFB
V
N1
CIN
COM
V
P1
P
U,V,W
Ic
V
CC
N-side
P-side
V
DB
NU,NV,
NW
V
UFS
,V
VFS
,V
WFS
L load
L load
V
CE
(200V/div)
t:200ns/div
V
CE
(200V/div)
Ic(5A/div)
Ic(5A/div)
t:200ns/div
Turn on
Turn off
