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<Dual-In-Line Package Intelligent Power Module>

1200V Mini DIPIPM with BSD Series APPLICATION NOTE

Publication Date: September 2015

36

3.1.9 Parallel operation of DIPIPM

Fig.3-1-14 shows the circuitry of parallel connection of two DIPIPMs. Route (1) and (2) indicate the gate charging

path of low-side IGBT in DIPIPM No.1 & 2 respectively. In the case of DIPIPM 1, the parasitic inductance becomes
large by long wiring and it might have a negative effect on DIPIPM's switching operation. (Chare operation of
bootstrap capacitor for high-side might be affected too.) Also, such a wiring makes DIPIPM be affected by noise
easily, then it might lead to malfunction. If more DIPIPMs are connected in parallel, GND pattern becomes longer
and the influence to other circuit (protection circuit etc.) by the fluctuation of GND potential is conceivable, therefore
parallel connection is not recommended.

Because DIPIPM doesn't consider the fluctuation of characteristics between each phase definitely, it cannot be

recommended to drive same load by parallel connection with other phase IGBT or IGBT of other DIPIPM.

Fig.3-1-14 Parallel operation

3.1.10 SOA of Mini DIPIPM

The following describes the SOA (Safety Operating Area) of the 1200V Mini DIPIPM.

V

CES

: Maximum rating of IGBT collector-emitter voltage

V

CC

: Supply voltage applied on P-N terminals

V

CC(surge)

: Total amount of V

CC

and surge voltage generated by the wiring inductance and the DC-link capacitor.

V

CC(PROT)

: DC-link voltage that DIPIPM can protect itself.

V

CE

=0

，

I

C

=0



V

CC



V

cc(surge)

Collector current Ic

V

CE

=0

，

I

C

=0



2



s

Short-circuit current



V

CC(PROT)



V

cc(surge)

Fig.3-1-15 SOA at switching mode and short-circuit mode

In case of Switching

V

CES

represents the maximum voltage rating (1200V) of the IGBT. By subtracting the surge voltage (200V

or less) generated by internal wiring inductance from V

CES

is V

CC(surge)

, that is 1000V. Furthermore, by

subtracting the surge voltage (100V or less) generated by the wiring inductor between DIPIPM and
DC-link capacitor from V

CC(surge)

derives V

CC

, that is 900V.

In case of Short-circuit

V

CES

represents the maximum voltage rating (1200V) of the IGBT . By Subtracting the surge voltage

(200V or less) generated by internal wiring inductor from V

CES

is V

CC(surge)

, that is, 1000V. Furthermore, by

subtracting the surge voltage (200V or less) generated by the wiring inductor between the DIPIPM and
the electrolytic capacitor from V

CC(surge)

derives V

CC

, that is, 800V.

AC100/200V

DC15V

DIPIPM 1

U,V,W

P

N

V

P

V

P1

V

P1

V

N1

V

NC

M

Shunt resistor

DIPIPM 2

U,V,W

P

N

V

P1

V

P

V

P1

V

N1

V

N

M

(1)

(2)

Shunt resistor

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Содержание PSS**S72FT

Страница 1: ... SYSTEM APPLICATION GUIDANCE 27 3 1 Application Guidance 27 3 1 1 System connection 27 3 1 2 Interface Circuit Direct Coupling Interface example for using one shunt resistor 28 3 1 3 Interface Circuit Example of Opto coupler Isolated Interface 29 3 1 4 External SC Protection Circuit with Using Three Shunt Resistors 30 3 1 5 Circuits of Signal Input Terminals and Fo Terminal 30 3 1 6 Snubber Circui...

Страница 2: ...vements loss performance built in peripheral functions and line up expansion Main features of this series are as below Newly developed 6th generation CSTBT are integrated for improving efficiency Incorporating bootstrap diode BSD with current limiting resistor for P side gate driving supply Newly integrated temperature of control IC part output function Same package with Mini DIPIPM with BSD Serie...

Страница 3: ...upply under voltage UV lockout circuit with fault signal output Outputting LVIC temperature by analog signal No self over temperature protection Fault Signal Output Corresponding to N side IGBT SC and N side UV protection IGBT Drive Supply Single DC15V power supply in the case of using bootstrap method Control Input Interface Schmitt triggered 5V input compatible high active logic UL recognized UL...

Страница 4: ... as air conditioners and so on Except for vehicle application 1 4 Product Line up Table 1 4 1 1200V Mini DIPIPM Line up Mini DIP with BSD series package Type Name Note 1 IGBT Rating Motor Rating Note 1 Isolation Voltage PSS05S72FT 5A 1200V 0 75kW 440VAC Viso 2500Vrms Sine 60Hz 1min All shorted pins heat sink PSS10S72FT 10A 1200V 1 5kW 440VAC Note 1 The motor ratings are calculation results It will...

Страница 5: ...OTAL SYSTEM Symbol Parameter Condition Ratings Unit VCC PROT Self protection supply voltage limit Short circuit protection capability VD 13 5 16 5V Inverter Part Tj 125 C non repetitive less than 2μs 800 V TC Module case operation temperature Measurement point of Tc is described below 30 100 C Tstg Storage temperature 40 125 C Viso Isolation voltage 60Hz Sinusoidal AC 1min between connected all pi...

Страница 6: ...defined position to get accurate temperature information Due to the control schemes such different control between P and N side there is the possibility that highest Tc point is different from above point In such cases it is necessary to change the measuring point to that under the highest power chip Power chip position Fig 2 1 1 indicate the position of the each power chips This figure is the vie...

Страница 7: ... determined by the thickness and the thermal conductivity of the applied grease For reference Rth c f is about 0 3K W per 1 6 module grease thickness 20μm thermal conductivity 1 0W m k The above data shows the thermal resistance between chip junction and case at steady state The thermal resistance goes into saturation in about 10 seconds The unsaturated thermal resistance is called as transient th...

Страница 8: ...3 40 μs tC off 0 40 0 80 μs trr 0 50 μs ICES Collector emitter cut off current VCE VCES Tj 25 C 1 mA Tj 125 C 10 Switching time definition and performance test method are shown in Fig 2 1 4 and 2 1 5 Switching characteristics are measured by half bridge circuit with inductance load Fig 2 1 4 Switching time definition Fig 2 1 5 Evaluation circuit inductive load Short A for N side IGBT and short B f...

Страница 9: ...d stop the DIPIPM 3 Fault signal Fo outputs when SC or UV protection works Fo pulse width is different for each protection modes At SC failure Fo pulse width is a fixed width which is specified by the capacitor connected to CFO terminal CFO 9 1 x 10 6 x tFO F but at UV failure Fo outputs continuously until recovering from UV state But minimum Fo pulse width is the specified time by CFO Recommended...

Страница 10: ...on of Mini DIPIPM Table 2 1 6 Mechanical characteristics and ratings of PSS10S72FT MECHANICAL CHARACTERISTICS AND RATINGS Parameter Condition Limits Unit Min Typ Max Mounting torque Mounting screw M3 Note 1 Recommended 0 78 N m 0 59 0 98 N m Terminal pulling strength Load 9 8N EIAJ ED 4701 10 s Terminal bending strength Load 4 9N 90deg bend EIAJ ED 4701 2 times Weight 21 g Heat sink flatness Note ...

Страница 11: ...tern wiring around the shunt resistor as short as possible Fig 2 2 1 SC protecting circuit Fig 2 2 2 Filter time constant setting 2 SC protection Sequence SC protection N side only with the external shunt resistor and RC filter a1 Normal operation IGBT ON and carrying current a2 Short circuit current detection SC trigger It is necessary to set RC time constant so that IGBT shut down within 2 0μs w...

Страница 12: ...perative SC Range RShunt 30mΩ min 31 6mΩ typ 33 2mΩ max Condition min typ Max at Tj 25 C VD 15V 13 5A 15 2A 17A e g 30mΩ Rshunt min 0 51V VSC max 17A SC max There is the possibility that the actual SC protection level becomes less than the calculated value This is considered due to the resonant signals caused mainly by parasitic inductance and parasitic capacity It is recommended to make a confirm...

Страница 13: ... operating of each protection function UV Fo output etc is not also assured Normally IGBT does not work But external noise may cause DIPIPM malfunction turns ON so DC link voltage need to start up after control supply starts up 4 0 UVDt N UVDBt P UV function becomes active and output Fo N side only Even if control signals are applied IGBT does not work UVDt N 13 5V UVDBt P 13 0V IGBT can work Howe...

Страница 14: ...uts current Fig 2 2 4 Timing chart of N side UV protection P side UV Protection Sequence a1 Control supply voltage VDB rises After the voltage reaches under voltage reset level UVDBr IGBT turns on by next ON signal L H a2 Normal operation IGBT ON and outputs current a3 VDB level drops to under voltage trip level UVDBt a4 IGBT of the corresponding phase only turns OFF in spite of control input sign...

Страница 15: ...h is described in Fig 2 2 9 is the output of OP amplifier circuit The current capability of VOT output is described as Table 2 2 6 The characteristics of VOT output vs LVIC temperature is linear characteristics described in Fig 2 2 13 There are some cautions for using this function as below Table 2 2 6 Output capability Tc 20 C 100 C min Source 1 7mA Sink 0 1mA Source Current flow from VOT to outs...

Страница 16: ... the controller In the case of using low voltage controller like 3 3V MCU if it is necessary to set the trip VOT level to control supply voltage e g 3 3V or more there is the method of dividing the VOT output by resistance voltage divider circuit and then inputting to A D converter on MCU Fig 2 2 11 In that case sum of the resistances of divider circuit should be almost 5 1kΩ About the necessity o...

Страница 17: ...tion As mentioned above the heat of power chips transfers to LVIC through the heat sink and package so the relationship between LVIC temperature Tic VOT output case temperature Tc under the chip defined on datasheet and junction temperature Tj depends on the system cooling condition heat sink control strategy etc For example of PSSxxS72FT their relationship example in the case of using the heat si...

Страница 18: ... relationship of Tj Tic in Fig 2 2 14 Tic 85 C Tj 135 C 3 Get VOT value from the VOT output characteristics in Fig 2 2 15 and the Tic value which was obtained at phase 2 VOT 2 64V Tic 85 C is decided as the protection level As above procedure the setting value for VOT output is decided to 2 64V But VOT output has some data spread so it is important to confirm whether the protection temperature flu...

Страница 19: ... 1 8 2 0 2 2 2 4 2 6 2 8 3 0 3 2 70 80 90 100 VOT output V _ LVIC temperature C Typ Max Min 4 80 3 2 64V 4 90 2 85 Fig 2 2 15 VOT output vs LVIC temperature Enlarged graph of Fig 2 2 12 The relationship between Tic Tc measuring and Tj calculated by loss depends on the system cooling condition and control strategy and so on So please evaluate about these temperature relationship on your real system...

Страница 20: ...PM with BSD Series APPLICATION NOTE Publication Date September 2015 20 2 3 Package Outlines 2 3 1 Package outlines QR Code is registered trademark of DENSO WAVE INCORPORATED in JAPAN and other countries Fig 2 3 1 PSSxxS72FT package outline drawing Dimension in mm ...

Страница 21: ...2FT Dimension in mm The Lot number indicates production year month running number and country of origin The detailed is described as below Example C 3 9 AA1 Running number Product month however O October N November D December Last figure of Product year e g 2013 Factory identification None Manufactured at the factory in Japan C Manufactured at the factory A in China H Manufactured at the factory B...

Страница 22: ...pin 15 VWFB W phase P side drive supply positive terminal 16 VP1 W phase P side control supply positive terminal 17 COM Dummy pin 18 WP W phase P side control input terminal 19 UNG Dummy pin 20 VOT Temperature output 21 UN U phase N side control input terminal 22 VN V phase N side control input terminal 23 WN W phase N side control input terminal 24 FO Fault signal output terminal 25 CFO Fault pul...

Страница 23: ...by min 3 3kΩ resistor internally The wiring of each input should be as short as possible to protect the DIPIPM from noise interference Use RC coupling in case of signal oscillation Pay attention to threshold voltage of input terminal because input circuit has pull down resistor Short circuit trip voltage detecting terminal CIN For short circuit protection input the potential of external shuint res...

Страница 24: ...4 1 When fastening it is necessary to use the torque wrench and fasten up to the specified torque And pay attention not to have any foreign particle on the contact surface between the module and the heat sink Even if the fixing of heatsink was done by proper procedure and condition there is a possibility of damaging the package because of tightening by unexpected excessive torque or tucking partic...

Страница 25: ...pplied grease For reference Rth c f is about 0 3K W per 1 6 module grease thickness 20μm thermal conductivity 1 0W m k When applying grease and fixing heat sink pay attention not to take air into grease It might lead to make contact thermal resistance worse or loosen fixing in operation 2 4 3 Soldering Conditions The recommended soldering condition is mentioned as below Note The reflow soldering c...

Страница 26: ...o check the DIPIPM terminal root temperature solderability and so on in your real PCB when configure the soldering temperature profile It is recommended to set the soldering time as short as possible For reference the evaluation example of hand soldering with 50W soldering iron is described as below Evaluation method a Sample PSSxxS72FT b Evaluation procedure Put the soldering tip of 50W iron temp...

Страница 27: ... strategy of the application system C2 0 01μ 2μF ceramic capacitor with good temperature frequency and DC bias characteristics C3 0 1μ 0 22μF Film capacitor for snubber D1 Zener diode 24V 1W for surge absorber Z Surge absorber C AC filter ceramic capacitor 2 2n 6 5nF Common mode noise filter P side input PWM C2 D1 C1 VNC W V U Fo output CFO P CIN N N side input PWM M P side IGBTs N side IGBTs Temp...

Страница 28: ...y one shunt operation Low inductance SMD type with tight tolerance temp compensated type is recommended for shunt resistor 7 All capacitors should be mounted as close to the terminals as possible C1 good temperature frequency characteristic electrolytic type and C2 0 22μ 2μF good temperature frequency and DC bias characteristic ceramic type are recommended 8 Input logic is High active There is a 3...

Страница 29: ...revent Fo output from malfunctioning it is recommended to make wiring from Fo terminal to buffer Tr and coupler as short as possible 3 About comparator circuit at VOT output it is recommended to design the input circuit with hysteresis because of preventing output chattering MCU 5V OT trip level Comparator M C2 15V VD C4 R1 Shunt resistor N1 UN 21 VN 22 WN 23 Fo 24 VN1 28 VNC 27 P U W NU LVIC V CI...

Страница 30: ...ctive input logic 3 3kΩ min pull down resistor is built in each input circuits of the DIPIPM as shown in Fig 3 1 5 so external pull down resistor is not needed Furthermore by lowering the turn on and turn off threshold value of input signal as shown in Table 3 1 1 a direct coupling to 3V class microcomputer or DSP becomes possible Fig 3 1 5 Internal structure of control input terminals Table 3 1 1...

Страница 31: ...m input pulse width Refer the datasheet for each product about detail Condition Min value Unit On signal PWIN on 2 0 μs Off signal PWIN off 200 VCC 350V 13 5 VD 16 5V 13 0 VDB 18 5V 20 TC 100 C N line wiring inductance less than 10nH Up to rated current 2 5 From rated current to 1 7times of rated current 2 9 Input signal with ON pulse width less than PWIN on might make no response IPM might make n...

Страница 32: ...er Circuit In order to prevent DIPIPM from destruction by extra surge the wiring length between the smoothing capacitor and P terminal DIPIPM N1 points shunt resistor terminal should be as short as possible Also a 0 1μ 0 22μF 630V snubber capacitor should be mounted in the DC link and near to P N1 Normally there are two positions 1 or 2 to mount a snubber capacitor as shown in Fig 3 1 9 Snubber ca...

Страница 33: ... 10 Wiring instruction In the case of using with one shunt resistor Fig 3 1 11 Wiring instruction In the case of using with three shunt resistors Connect GND wiring from VNC terminal to the shunt resistor terminal as close as possible Shunt resistor It is recommended to make the inductance of this part including the shunt resistor under 10nH e g Inductance of copper pattern width 3mm length 17mm i...

Страница 34: ...e CIN terminals If part B wiring is too long extra surge voltage generated by the wiring inductance will lead to deterioration of SC protection level It is necessary to connect CIN and VNC terminals directly to the two ends of shunt resistor and avoid long wiring 3 Influence of the part C wiring pattern C1R2 filter is added to remove noise influence occurring on shunt resistor Filter effect will d...

Страница 35: ...ls IC surge destruction or malfunction might occur The input lines are located parallel and close to the floating supply lines for P side drive Cross talk noise might be transferred through the capacitance between these floating supply lines and input lines to DIPIPM Then incorrect signals are input to DIPIPM input and arm short short circuit might occur 4 2 1 3 N1 P CIN VN1 VP1 UP VP WP VNC VPC U...

Страница 36: ...he SOA Safety Operating Area of the 1200V Mini DIPIPM VCES Maximum rating of IGBT collector emitter voltage VCC Supply voltage applied on P N terminals VCC surge Total amount of VCC and surge voltage generated by the wiring inductance and the DC link capacitor VCC PROT DC link voltage that DIPIPM can protect itself VCE 0 IC 0 VCC Vcc surge Collector current Ic VCE 0 IC 0 2 s Short circuit current ...

Страница 37: ...he conditions if the IGBT conducting period is less than about 4 5μs Since the SCSOA operation area will vary with the control supply voltage DC link voltage and etc it is necessary to set time constant of RC filter with a margin 0 20 40 60 80 100 120 140 0 1 2 3 4 5 6 7 Ic apeak Input pulse width μs Max Saturation Current 100A VD 16 5V IGBTSCOperationarea VD 18 5V VD 16 5V VD 15V Fig 3 1 16 Typic...

Страница 38: ...unction temperature variation affect the device lifetime Fig 3 1 18 shows the IGBT power cycle curve as a function of average junction temperature variation Tj The curve is a regression curve based on 3 points of Tj 46 88 98K with regarding to failure rate of 0 1 1 and 10 These data are obtained from the reliability test of intermittent conducting operation 1000 10000 100000 1000000 10000000 10 10...

Страница 39: ...tput current various with Icp sinx and it does not include ripple 5 Power factor of load output current is cos ideal inductive load is used for switching Expressions Derivation PWM signal duty is a function of phase angle x as 2 x sin D 1 which is equivalent to the output voltage variation From the power factor cos the output current and its corresponding PWM duty at any phase angle x can be obtai...

Страница 40: ... Vcc x Icp Irr sin sin 8 1 4 sin sin 2 1 2 2 Attention of applying the power loss simulation for inverter designs Divide the output current period into fine steps and calculate the losses at each step based on the actual values of PWM duty output current VCE sat VEC and Psw corresponding to the output current The worst condition is most important PWM duty depends on the signal generating way The r...

Страница 41: ...ase PWM modulation 60Hz sine waveform output 0 1 2 3 4 5 6 7 8 0 5 10 15 20 Io Arms fc kHz PSS10S72FT PSS05S72FT Fig 3 2 2 Effective current carrier frequency characteristics Fig 3 2 2 shows an example of estimating allowable inverter output rms current under different carrier frequency and permissible maximum operating temperature condition Tf 100 C Tj 125 C The results may change for different c...

Страница 42: ...e From AC line R S T Period T 16ms Pulse width tw 0 05 1μs input in random 3 3 2 Countermeasures and Precautions DIPIPM improves noise withstand capabilities by means of reducing parts quantity lowering internal wiring parasitic inductance and reducing leakage current But when the noise affects on the control terminals of DIPIPM due to wiring pattern on PCB the short circuit or malfunction of SC p...

Страница 43: ...e is impressed at each voltage Limit voltage of surge simulator 4 0kV Judgment method change in V I characteristic Table 3 3 1 PSSxxS72FT Typical ESD capability Control terminal part Common data for PSSxxS72FT because of all types have same interface circuit Terminals UP VP WP VNC 1 0 0 9 VP1 VNC 1 5 1 5 VUFB VUFS VVFB VVFS VWFB VWFS 2 1 2 1 UN VN WN VNC 1 1 1 0 VN1 VNC 4 0 or more 4 0 or more CIN...

Страница 44: ...nt limiting resistor and BSD when voltage of output terminal U V or W goes down to GND potential in inverter operation But there is the possibility that enough charge doesn t perform due to the conditions such as switching sequence capacitance of BSC and so on Deficient charge leads to low voltage of BSC and might work under voltage protection UV This situation makes the loss of P side IGBT increa...

Страница 45: ...ing the circuit current exceeds 1 10mA and increases proportional to carrier frequency For reference Fig 4 2 1 2 show typical IDB carrier frequency fc characteristics for PSSxxS72FT Conditions VD VDB 15V Tj 125 C at which IDB becomes larger IGBT ON Duty 10 30 50 70 90 0 0 0 2 0 4 0 6 0 8 1 0 1 2 0 5 10 15 20 Circuit current mA Carrier frequency kHz Fig 4 2 1 IDB vs Carrier frequency for PSS05S72FT...

Страница 46: ...inum solid type Low temp 5 High temp 10 Different due to temp characteristics rank Low temp 5 0 High temp 5 10 in the case of B X5R X7R ranks DC bias characteristics Applying DC15V Nothing within rating voltage Different due to temp characteristics rating voltage package size and so on 70 15 DC bias characteristic of electrolytic capacitor is not matter But it is necessary to note ripple capabilit...

Страница 47: ...cedures for BSC charging One is performed by one long pulse and another is conducted by multiple short pulses Multi pulse method is used when there are some restriction like control supply capability and so on Fig 4 4 1 Initial charging root Fig 4 4 2 Example of waveform by one charging pulse Initial charging needs to be performed until voltage of BSC exceeds recommended minimum supply voltage 13V...

Страница 48: ...box additional buffer materials are also inserted Fig 5 1 Packaging Specification 55 19 520 545 175 230 Plastic Tube DIPIPM Packaging box Quantity 9pcs per 1 tube 4 columns 8 stages Total amount in one box max Tube Quantity 4 8 32pcs IPM Quantity max 32 9 288pcs Weight max About 21g per 1pcs of DIPIPM About 300g per 1 tube About 11kg per 1 box When it isn t fully filled by tubes at top stage cardb...

Страница 49: ... standard 94 V0 but they are not noninflammable Static electricity ICs and power chips with MOS gate structure are used for the DIPIPM power modules Please keep the following notices to prevent modules from being damaged by static electricity 1 Precautions against the device destruction caused by the ESD The ESD of human bodies and packaging and or excessive voltage applied across the gate to emit...

Страница 50: ... Dual In Line Package Intelligent Power Module 1200V Mini DIPIPM with BSD Series APPLICATION NOTE Publication Date September 2015 50 Revision Record Rev Date Points 1 9 2015 New ...

Страница 51: ... for the latest product information before purchasing a product listed herein The information described here may contain technical inaccuracies or typographical errors Mitsubishi Electric Corporation assumes no responsibility for any damage liability or other loss rising from these inaccuracies or errors Please also pay attention to information published by Mitsubishi Electric Corporation by vario...

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