5.
Nonvolatile Memory Information
The ATSAMR30M18A provides the user a readable Nonvolatile Memory (NVM) space called user row, programmed
in the factory. The base address for the application is 0x804008. The following table shows the implemented data
structure.
Table 5-1. NVM (User Row) Data
Address Offset
Field Name
Field Description
Length
BaseAddr. + 0x00
MIB_REVISION
Data structure revision. 0x1501
2 bytes
+0x02
MAC_IEEE_ADDRESS
Module specific IEEE MAC Address
8 bytes
+0x0A
BOARD_SERIAL
Module specific serial number
10 bytes
+0x14
PART_NO
Product specific part number
8 bytes
+0x1C
PCBA_REV
Product PCB/assembly revision
1 byte
+0x1D
XTAL_TRIM
Reference crystal calibration value
1 byte
+0x1E
CRC16
Checksum for this data structure
2 bytes
BOARD_SERIAL and PART_NO for this ATSAMR30M18A will be programmed with 0xFF. The end user application
software must copy two data fields to radio transceiver registers. The data in MAC_IEEE_ADDRESS must be copied
to the registers IEEE_ADDR_0 to IEEE_ADDR_7 of AT86RF212B. The MAC_IEEE_ADDRESS is stored little-endian
with the first byte stored at the lowest address.
The XTAL_TRIM value is determined during the production test and must be copied to the transceiver XTAL_TRIM
bits of XOSC_CTRL register (AT86RF212B). For more information on registers, see the
Programming the XTAL_TRIM value reduces the absolute deviation for the 16 MHz reference crystal. CRC16 is
calculated using CRC-CCITT with the polynomial x
16
+ x
12
+ x
5
+ 1 and initial value as 0xFFFF.
ATSAMR30M18A
Nonvolatile Memory Information
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2018-2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS70005384B-page 15