
30
LatticeEC Advanced Evaluation Board –
Lattice Semiconductor
Revision C User’s Guide
Figure 20. Power
5
5
4
4
3
3
2
2
1
1
D
D
C
C
B
B
A
A
P
W
R
_3.
3
V
GAT
E
_1.
2
P
W
R_
1
.2
V
V
C
C
_1.
2
V
V
CCIO
_
0
V
CCIO
_
1
V
CCIO
_
2
V
CCIO
_
3
V
CCIO
_
4
V
CCIO
_
5
V
CCIO
_
6
V
CCIO
_
7
V
CCIO
_
0
V
CCIO
_
1
V
CCIO
_
2
V
CCIO
_
3
V
CCIO
_
4
V
CCIO
_
5
V
CCIO
_
6
V
CCIO
_
7
V
CCIO
_
0
V
CCIO
_
1
V
CCIO
_
2
V
CCIO
_
3
V
CCIO
_
4
V
CCIO
_
5
V
CCIO
_
6
V
CCIO
_
7
V
CCIO
_
0
V
CCIO
_
1
V
CCIO
_
2
V
CCIO
_
3
V
CCIO
_
4
V
CCIO
_
5
V
CCIO
_
6
V
CCIO
_
7
V
C
C
_2.
5
V
V
CC_
1
.2
V
V
C
C
_2.
5
V
DRA
I
N
_2.
5
DRA
I
N
_1.
2
V
CC_
I
N
V
CC_
I
N
P
C
I_3.
3
V
P
W
R_
A
D
J
V
CC_
I
N
V
CC_
I
N
V
CC_
I
N
P
W
R_
2
.5
V
GAT
E
_2.
5
DRA
I
N
_2.
5
V
CC_
I
N
GAT
E
_1.
2
DRA
I
N
_1.
2
V
CC_
I
N
V
CC_
3
.3
V
PC
I_
3
.3
V
V
CC_
3
.3
V
GAT
E
_2.
5
V
CC_
A
D
J
V
CC_
A
D
J
V
CC_
1
.2
V
V
CCIO
_
0
V
CCIO
_
1
V
CCIO
_
2
V
CCIO
_
3
V
CCIO
_
4
V
CCIO
_
5
V
CCIO
_
6
V
CCIO
_
7
V
CC_
2
.5
V
PC
I_
3
.3
V
V
CC_
3
.3
V
PC
I_
G
N
D
_57
Ti
tl
e
Siz
e
D
o
c
u
me
n
t
Nu
m
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er
e
v
Da
te
h
e
e
t
of
C
Po
w
er
C
7
8
Mo
n
d
a
y
, Fe
b
r
u
ary
0
7
,
2005
[5
]
[6
]
[2
]
[2
]
[3]
,
[3
]
[3
]
[4
]
[4
]
[2
]
[2
]
[6
]
[6
]
[6
]
[5]
,
Lattice S
e
m
i
c
o
n
d
u
c
t
o
r
C
o
r
p
o
r
a
t
i
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n
Another P-Channel MOSFET opt
i
o
n
i
n
S
O
T
2
3
p
a
c
k
a
g
e
Another P-Channel MOSFET opt
i
o
n
i
n
S
O
T
2
3
p
a
c
k
a
g
e
+5VD
C
VCCIO Voltage
Selection
GND Pins for Signal Prob
i
n
g
2
.
5
V
/
2.6V
V
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l
t
a
g
e
S
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lection
R2
9
10K
Q4
Si
5475D
C
V
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h
a
y
S
ilic
on
ix
1
2
0
6
-
8
J2
0
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A
N
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A
C
K
S
1
JP
4
H
EAD
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8
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1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
R6
9
5
1
J1
7
BA
N
A
N
A J
A
C
K
S
1
R6
4
51K 1
%
Y
A
GEO 0402
F3
1.
5A F
U
SE Li
tt
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lf
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e
15401.
5
1
2
Q2
Si
2323D
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V
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h
a
y
S
ilic
on
ix
S
O
T
2
3
G
D
S
D1
4
1
N
5
8
20
J2
6
CO
N
1
1
C
139
10
u
F 0
8
05
1
2
D1
3
1
N
5
8
20
R6
2
39K 1
%
Y
A
GEO 0402
F2
3
A
FUS
E
L
itte
lf
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154003
1
2
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4.
7pF
1
2
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T
PS64203D
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1
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N
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2
FB
3
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4
V
I
N
5
S
W
6
D1
2
1
N
5
8
20
C1
5
10
u
F S
iz
e
C
1
2
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5
30.
1
K 1
%
YA
G
E
O
0
4
0
2
+
C1
2
2.
2
u
F S
ize
B
JP
2
H
EAD
ER
8
X2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
D1
6
B320A D
io
d
e
s
I
n
c
.
Q1
Si
2323D
S
V
is
h
a
y
S
ilic
on
ix
S
O
T
2
3
G
D
S
F4
1.
5A F
U
SE Li
tt
e
lf
u
s
e
15401.
5
1
2
R7
0
5
1
R7
5
36K 1
%
Y
A
GEO 0402
J2
7
CO
N
1
1
C6
100
u
F S
ize
D
1
2
C1
4
10
u
F S
iz
e
C
1
2
C
140
10
u
F 0
8
05
1
2
J3
2
CO
N
3
1
2
3
U5
T
P
S
7
8
601KT
T
V
I
N
2
E
N
1
G
N
D
3
V
OU
T
4
FB
5
R6
3
42.
2
K
1
%
Y
A
GEO 0402
J2
8
CO
N
1
1
J2
4
CO
N
1
1
L1
6.
2
u
H S
u
mi
d
a
C
D
R
H
6
D
3
8
-6
R
2
1
2
C1
3
4.
7
u
F S
ize
B
1
2
JP
5
H
EAD
ER
8
X2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
U6
T
P
S
7
8
601KT
T
V
I
N
2
E
N
1
G
N
D
3
V
OU
T
4
FB
5
J2
2
P
W
R JA
CK
S
w
it
c
h
c
raf
t R
APC
722
3
2
1
C
137
10
u
F 0
8
05
1
2
R3
0
30.
1
K 1
%
Y
A
GEO 0402
J2
9
CO
N
1
1
Q3
Si
5475D
C
V
is
h
a
y
S
ilic
on
ix
1
2
0
6
-
8
J1
6
BA
N
A
N
A J
A
C
K
S
1
+
C1
0
2.
2
u
F S
ize
B
U
8
T
PS64203D
V
B
/E
N
1
G
N
D
2
FB
3
IS
E
N
SE
4
V
I
N
5
S
W
6
C5
100
u
F S
ize
D
1
2
J1
9
BA
N
A
N
A J
A
C
K
S
1
JP
3
H
EAD
ER
8
X2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
L2
6.
2
u
H S
u
mi
d
a
C
D
R
H
6
D
3
8
-6
R
2
1
2
C1
1
4.
7
u
F S
ize
B
1
2
J1
8
BA
N
A
N
A J
A
C
K
S
1
C7
1
u
F S
ize
A
1
2
R3
1
10K
J2
1
BA
N
A
N
A J
A
C
K
S
1
R3
2
50K POT
M
u
rat
a
P
V
G5H
503A01
1
3
2
J2
5
CO
N
1
1
C1
3
8
10
u
F 0
8
05
1
2
F1
3
A
FUS
E
L
itte
lf
u
s
e
154003
1
2
D1
5
B320A D
io
d
e
s
I
n
c
.
C
8
1
u
F S
ize
A
1
2