Intel Xeon Phi Processor x200, Техническое руководство по тепловым и механическим характеристикам и конструкции

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Thermal Specifications and Design Guidelines
Intel
®
Xeon
®
Phi™ Processor x200 Product Family TMSDG Order Number: 334785-002
44
Thermal validation considerations: Due to the challenges involved with measuring real-
time power on operational processors, Intel recommends using a Thermal Test Vehicle
(TTV) to validate the platform thermal solution. The TTV enables precise control of the
CPU, MCDRAM and Fabric die power dissipation, and ensures accurate, precise and
repeatable T
CASE
temperature measurements.
6.1.2 Case Temperature Geometry and Influence Factors
The processor MCP requires careful monitoring and control of temperatures on multiple
silicon die inside the package. The case temperature is defined as the temperature
measured at various locations on the surface of the Integrated Heat Spreader (IHS)
above these component die hot spots. The IHS maximum case temperature (T
CASE
)
specifications for the processor and MCDRAM die are listed in Table 6-1 . No case
temperature is required for the fabric die.
Three case temperature (T
CASE
) locations are defined for the processor MCPs: one for
the processor die and two options for the MCDRAM die. See Figure 6-1 and Figure 6-2
for the T
CASE
locations.
Which MCDRAM T
CASE
location to measure depends upon the direction of airflow
through the heatsink. Use the location that is downstream from the processor die
(meaning the air moving over the MCDRAM has been preheated by the processor die)
as this will ensure the worst case MCDRAM conditions are evaluated. The thermocouple
location for the MCDRAMs is chosen to reflect the worst case hot spot on the hottest
memory silicon die. The hottest MCDRAM die is expected to be either interior
downstream device; the upper middle device is chosen in
Figure 6-1 and Figure 6-2 .
Design and validation of a thermal solution which properly cools all the components in a
MCP drives the need to measure the IHS case temperate above the worst-case location
for each different type of device.
The processor will generally exhibit higher temperatures on the IHS at the locations
coinciding with the processor and MCDRAM die. The IHS has a heat spreading effect.
The temperature delta between silicon die hot spots and the IHS geometric center vary
depending on the total dissipated power and the power distribution between the
processor and MCDRAM die.