Infineon REF-Vacuum-C101-2ED, Руководство пользователя

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User Guide www.Infineon.com/iMotion 14 of 43 www.Infineon.com/SOI Revision 1.0
2020-5-22
UG2020-11 REF-Vacuum-C101-2ED User Guide
4.2 The detailed features and functions of 2ED2304
 Infineon thin-film-SOI technology, high reliability and lower power loss
 Fully operational to +650 V
 Output source/sink current capa0.36 A/-0.7 A
 Floating channel designed for bootstrap operation
 Integrated ultra-fast, low R
DS(ON)
bootstrap diode, reduced PCB and internal logic complexity
 Tolerant to negative transient voltage up to -100 V (pulse width is up 300 ns) provided by SOI technology
 Internal dead time 75 ns (typical) and dead time matching time 10 ns (typical)
 dV/dt immune ±50 V
 10 ns (typical), 60 ns max. propagation delay matching
 Gate drive supply range from 10 V to 20 V
 Undervoltage lockout for both channels
 RoHS compliant
 3.3 V, 5 V and 15 V input logic compatible
4.3 Tolerant to negative transient voltage on V
S
pin (-VS)
A common problem in today’s power switching converters is the transient response of the switch node’s
voltage, as the power switches transition on and off quickly while carrying a large current, as illustrated in
Figure 6.
Figure 6 Negative V
S
This negative V
S
voltage can cause the high side output to change state, or the device to latch up resulting in
large currents or I
QCC
shifts. A high side output transition from high to low will not damage the IC or the switch,
Negative V
S
spike