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2020-5-22
UG2020-11 REF-Vacuum-C101-2ED User Guide
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Product overview of 2ED2304S06F
Traditional motor control is between 4 – 20 kHz PWM frequency, while new motor control applications need up
to 30-50 kHz. Hence, gate drivers will be required with lower level-shift switching losses and lower leakage
currents to reduce the dissipated power during operation.
Higher PWM frequency allows users to achieve higher motor control dynamics, and reduce motor size and
weight, which is especially applicable to hand-held electronic devices. Higher PWM frequency requires lower
PWM propagation delay matching time between high-side and low-side MOS drives to reduce the waveform
distortion. Moreover, higher time accuracy of the motor current sampling also requires gate drivers to deliver
delay matching as low as possible.
International Rectifier was the first innovator of junction isolation technology and Infineon is now continuing
the history of innovation with its unique SOI technology for high voltage. Infineon’s SOI-based level-shift
technology requires less energy to transfer the control (PWM) signal from the low voltage control side to the
high-voltage portion of the gate driver (the high voltage well), and provides additional performance and
reliability with reduced leakage currents and increased latch-up immunity. It also enables higher switching
frequencies above 100 kHz. Some key parameters of 2ED2304 compared with IRS2304 are shown in Table 8.
Table 8
IRS2304S Vs. 2ED2304
Parameter
IRS2304S
2ED2304S
Operating voltage
600 V
650 V
Input configuration
HIN, LIN
HIN, LIN
Bootstrap diode
External
Integrated
Negative V
S
transient [Max]
< -50 V
<= -100 V
I
O+
/
I
O-
[TYP]
290 mA / 600 mA
360 mA / 700 mA
Prop. delay - t
ON/OFF
(ns - Typ)
220 / 200
310 / 300
Delay matching – MT (ns – Typ)
46
20
Dead time – DT (ns) (Typ)
100
75
Matching DT (ns - Max)
50
50
t
r/f
(ns – Typ)
70 / 35
48 / 24
Level shift losses
-
50% lower
Logic operation for Vs of COM
-5V ~ +600V
-8 V
~ +600 V
Infineon’s new SOI drivers with increased performance and integration are now being expanded with the
2ED2304S06F 650 V half-bridge SOI gate driver with integrated bootstrap diode, superior negative V
S
robustness, reduced level-shift losses, and more reliable performance.
2ED2304S06F has successfully operated at 120 kRPM with an iMOTION
TM
controller in a battery-powered
vacuum cleaner application. Other new applications utilizing HB-LLC topology that switch above 100 kHz can
now be implemented using the 2ED2304S06F.
