Electrical Characteristics
MC9S12XHY-Family Reference Manual, Rev. 1.01
742
Freescale Semiconductor
Table A-17. NVM Reliability Characteristics
Conditions are shown in
Table A-4
unless otherwise noted
Num
C
Rating
Symbol
Min
Typ
Max
Unit
P-Flash Array
1
C Data retention at an average junction temperature of T
Javg
=
85
°
C
1
after up to 10,000 program/erase cycles
1
T
Javg
does not exceed 85
°
C in a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
t
PNVMRET
15
100
2
2
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25
°
C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618
—
Years
2
C Data retention at an average junction temperature of T
Javg
=
85
°
C
3
after less than 100 program/erase cycles
3
T
Javg
does not exceed 85
°
C in a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
t
PNVMRET
20
100
2
—
Years
3
C P-Flash number of program/erase cycles
(-40
°
C
≤
tj
≤
150
°
C
)
n
PFLPE
10K
100K
3
—
Cycles
D-Flash Array
4
C Data retention at an average junction temperature of T
Javg
=
85
°
C
3
after up to 50,000 program/erase cycles
t
DNVMRET
5
100
2
—
Years
5
C Data retention at an average junction temperature of T
Javg
=
85
°
C
3
after less than 10,000 program/erase cycles
t
DNVMRET
10
100
2
—
Years
6
C Data retention at an average junction temperature of T
Javg
=
85
°
C
3
after less than 100 program/erase cycles
t
DNVMRET
20
100
2
—
Years
7
C D-Flash number of program/erase cycles (-40
°
C
≤
tj
≤
150
°
C
)
n
DFLPE
50K
500K
3
—
Cycles
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