4.5.2.8.3 Allowed simultaneous flash and EEPROM operations
Only the operations marked 'OK' in the following table are permitted to be run
simultaneously on the flash and EEPROM blocks. Some operations cannot be executed
simultaneously because certain hardware resources are shared by the two memories. The
priority has been placed on permitting flash reads while program and erase operations
execute on the EEPROM, providing read (flash) while write (EEPROM) functionality.
Table 4-19. Allowed simultaneous flash and EEPROM operations
Program flash
EEPROM
Read
Margin read
Program
Sector erase
Mass erase
Read
OK
OK
OK
Program
Sector Erase
OK
1. A 'Margin read' is any read after executing the margin setting commands 'Set user margin level' or 'Set field margin level'
with anything but the 'normal' level specified. See the Note on margin settings in
2. The 'Mass erase' operations are commands 'Erase all blocks' and 'Erase flash block'
4.5.2.9 Flash and EEPROM command summary
This section provides details of all available flash commands launched by a command
write sequence. The FSTAT[ACCERR] bit will be set during the command write
sequence if any of the following illegal steps are performed, causing the command not to
be processed by the memory controller:
• Starting any command write sequence that programs or erases flash memory before
initializing the FLCKDIV register.
• Writing an invalid command as part of the command write sequence.
• For additional possible errors, refer to the error handling table provided for each
command.
If a flash block is read during the execution of an algorithm (FSTAT[CCIF] = 0) on that
same block, the read operation will return invalid data if both flags FERSTAT[SFDIF]
and FERSTAT[DFDIF] are set. If the FERSTAT[SFDIF] or FERSTAT[DFDIF] flags
were not previously set when the invalid read operation occurred, both the
FERSTAT[SFDIF] and FERSTAT[DFDIF] flags will be set.
If the FSTAT[ACCERR] or FSTAT[FPVIOL] bits are set, the user must clear these bits
before starting any command write sequence.
Chapter 4 Memory map
MC9S08PT60 Reference Manual, Rev. 4, 08/2014
Freescale Semiconductor, Inc.
95
Содержание MC9S08PT60
Страница 2: ...MC9S08PT60 Reference Manual Rev 4 08 2014 2 Freescale Semiconductor Inc...
Страница 34: ...MC9S08PT60 Reference Manual Rev 4 08 2014 34 Freescale Semiconductor Inc...
Страница 40: ...System clock distribution MC9S08PT60 Reference Manual Rev 4 08 2014 40 Freescale Semiconductor Inc...
Страница 120: ...Flash and EEPROM registers descriptions MC9S08PT60 Reference Manual Rev 4 08 2014 120 Freescale Semiconductor Inc...
Страница 200: ...Port data registers MC9S08PT60 Reference Manual Rev 4 08 2014 200 Freescale Semiconductor Inc...
Страница 228: ...System clock gating control registers MC9S08PT60 Reference Manual Rev 4 08 2014 228 Freescale Semiconductor Inc...
Страница 262: ...Human machine interfaces HMI MC9S08PT60 Reference Manual Rev 4 08 2014 262 Freescale Semiconductor Inc...
Страница 298: ...Functional Description MC9S08PT60 Reference Manual Rev 4 08 2014 298 Freescale Semiconductor Inc...
Страница 396: ...FTM Interrupts MC9S08PT60 Reference Manual Rev 4 08 2014 396 Freescale Semiconductor Inc...
Страница 440: ...Functional description MC9S08PT60 Reference Manual Rev 4 08 2014 440 Freescale Semiconductor Inc...
Страница 468: ...Initialization Application Information MC9S08PT60 Reference Manual Rev 4 08 2014 468 Freescale Semiconductor Inc...
Страница 570: ...Application information MC9S08PT60 Reference Manual Rev 4 08 2014 570 Freescale Semiconductor Inc...
Страница 648: ...Memory map and register description MC9S08PT60 Reference Manual Rev 4 08 2014 648 Freescale Semiconductor Inc...
Страница 676: ...Resets MC9S08PT60 Reference Manual Rev 4 08 2014 676 Freescale Semiconductor Inc...