34
MSP430G2533, MSP430G2433, MSP430G2333, MSP430G2233
MSP430G2403, MSP430G2303, MSP430G2203
SLAS734G – APRIL 2011 – REVISED APRIL 2016
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MSP430G2203
Specifications
Copyright © 2011–2016, Texas Instruments Incorporated
(1)
The sensor current I
SENSOR
is consumed if (ADC10ON = 1 and REFON = 1) or (ADC10ON = 1 and INCH = 0Ah and sample signal is
high). When REFON = 1, I
SENSOR
is included in I
REF+
. When REFON = 0, I
SENSOR
applies during conversion of the temperature sensor
input (INCH = 0Ah).
(2)
The following formula can be used to calculate the temperature sensor output voltage:
V
Sensor,typ
= TC
Sensor
(273 + T [°C] ) + V
Offset,sensor
[mV] or
V
Sensor,typ
= TC
Sensor
T [°C] + V
Sensor
(T
A
= 0°C) [mV]
(3)
The typical equivalent impedance of the sensor is 51 k
Ω
. The sample time required includes the sensor-on time t
SENSOR(on)
.
(4)
No additional current is needed. The V
MID
is used during sampling.
(5)
The on-time t
VMID(on)
is included in the sampling time t
VMID(sample)
; no additional on time is needed.
5.34 10-Bit ADC, Temperature Sensor and Built-In V
MID
(MSP430G2x33 Only)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V
CC
MIN
TYP
MAX
UNIT
I
SENSOR
Temperature sensor supply
current
(1)
REFON = 0, INCHx = 0Ah, T
A
= 25°C
3 V
60
µA
TC
SENSOR
ADC10ON = 1, INCHx = 0Ah
(2)
3 V
3.55
mV/°C
t
Sensor(sample)
Sample time required if channel 10
is selected
(3)
ADC10ON = 1, INCHx = 0Ah,
Error of conversion result
≤
1 LSB
3 V
30
µs
I
VMID
Current into divider at channel 11
ADC10ON = 1, INCHx = 0Bh
3 V
(4)
µA
V
MID
V
CC
divider at channel 11
ADC10ON = 1, INCHx = 0Bh,
V
MID
≈
0.5 × V
CC
3 V
1.5
V
t
VMID(sample)
Sample time required if channel 11
is selected
(5)
ADC10ON = 1, INCHx = 0Bh,
Error of conversion result
≤
1 LSB
3 V
1220
ns
(1)
Do not exceed the cumulative program time when writing to a 64-byte flash block. This parameter applies to all programming methods:
individual word or byte write and block write modes.
(2)
These values are hardwired into the state machine of the flash controller (t
FTG
= 1/f
FTG
).
5.35 Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
V
CC
MIN
TYP
MAX
UNIT
V
CC(PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
f
FTG
Flash timing generator frequency
257
476
kHz
I
PGM
Supply current from V
CC
during program
2.2 V, 3.6 V
1
5
mA
I
ERASE
Supply current from V
CC
during erase
2.2 V, 3.6 V
1
7
mA
t
CPT
Cumulative program time
(1)
2.2 V, 3.6 V
10
ms
t
CMErase
Cumulative mass erase time
2.2 V, 3.6 V
20
ms
Program and erase endurance
10
4
10
5
cycles
t
Retention
Data retention duration
T
J
= 25°C
100
years
t
Word
Word or byte program time
See
(2)
30
t
FTG
t
Block, 0
Block program time for first byte or word
See
(2)
25
t
FTG
t
Block, 1-63
Block program time for each additional byte or
word
See
(2)
18
t
FTG
t
Block, End
Block program end-sequence wait time
See
(2)
6
t
FTG
t
Mass Erase
Mass erase time
See
(2)
10593
t
FTG
t
Seg Erase
Segment erase time
See
(2)
4819
t
FTG
