Texas Instruments BQ25123, Manual, Page: 8 / 72

8.5 Electrical Characteristics (continued)
Circuit of Figure 8-1 , V
(UVLO)
< V
IN
< V
(OVP)
and V
IN
> V
(BAT)
+ V
(SLP)
, T
J
= –40 to +85°C and T
J
= 25°C for typical values
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
K
(ILIM)
Maximum input current
factor
I
(ILIM)
= 50 mA to 100 mA 175 200 225 AΩ
I
(ILIM)
= 100 mA to 400 mA 190 200 210 AΩ
V
IN(DPM)
Input voltage threshold
when input current is
reduced
Programmable Range using V
IN(DPM)
Registers. Can be disabled
using V
IN(DPM_ON)
4.2 4.9 V
V
IN_DPM
threshold
accuracy
–3% 3%
BATTERY CHARGER
V
D(PPM)
PMID voltage threshold
when charge current is
reduced
Above V
(BATREG)
0.2 V
R
ON(BAT-
PMID)
Internal battery charger
MOSFET on-resistance
Measured from BAT to PMID, V
(BAT)
= 4.35 V, High-Z mode 300 400 mΩ
V
(BATREG)
Charge voltage
Operating in voltage regulation, Programmable Range, 10mV
steps
3.6 4.65 V
Voltage regulation
accuracy
T
J
= 25°C –0.5% 0.5%
T
J
= 0°C to 85°C –0.5% 0.5%
I
(CHARGE)
Fast charge current
range
V
(BATUVLO)
< V
(BAT)
< V
(BATREG)
5 300 mA
Fast charge current
using ISET K
(ISET)
/
R
(ISET)
A
Fast charge current
accuracy
–5% 5%
K
(ISET)
Fast charge current
factor
5 mA > I
(CHARGE)
> 300 mA 190 200 210 AΩ
I
(TERM)
Termination charge
current
Termination current programmable range over I
2
C 0.5 37 mA
Termination current
using IPRETERM
I
(CHARGE)
< 300 mA, R
(ITERM)
= 15 kΩ 5 % of I
SET
I
(CHARGE)
< 300 mA, R
(ITERM)
= 4.99 kΩ 10 % of I
SET
I
(CHARGE)
< 300 mA, R
(ITERM)
= 1.65 kΩ 15 % of I
SET
I
(CHARGE)
< 300 mA, R
(ITERM)
= 549 Ω 20 % of I
SET
Accuracy I
(TERM
) > 4 mA –10% 10%
t
DGL(TERM)
TERM deglitch time Both rising and falling, 2-mV over-drive, t
RISE
, t
FALL
= 100 ns 64 ms
I
(PRE_CHARG
E)
Pre-charge current Pre-charge current programmable range over I
2
C 0.5 37 mA
Pre-charge current using
I
PRETERM
I
(TERM)
A
Accuracy –10% 10%
V
(RCH)
Recharge threshold
voltage
Below V
(BATREG)
100 120 140 mV
t
DGL(RCHG)
Recharge threshold
deglitch time
t
FALL
= 100 ns typ, V
(RCH)
falling 32 ms
SYS OUTPUT
R
DS(ON_HS)
PMID = 3.6 V, I
(SYS)
= 150 mA 675 850 mΩ
R
DS(ON_LS)
PMID = 3.6 V, I
(SYS)
= 150 mA 300 475 mΩ
R
DS(CH_SYS)
MOSFET on-resistance
for SYS discharge
V
I
N = 3.6 V, I
OUT
= –10 mA into V
OUT
pin 22 40 Ω
I
(LIMF)
SW current limit HS 2.2 V < V
(PMID)
< 5.5 V 450 600 675 mA
SW current limit LS 2.2 V < V
(PMID)
< 5.5 V 450 700 850 mA
I
(LIM_SS)
PMOS switch current
limit during soft start
Current limit is reduced during soft start 80 130 200 mA
BQ25123
SLUSCZ6A – JANUARY 2018 – REVISED MAY 2021
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